控轧控冷技术应用在Bi-2223/Ag超导带材制备过程中的研究

控轧控冷技术在钢铁中厚板材的应用已趋成熟,采用控轧控冷技术制备的中厚板材具有组织均匀、晶粒细小、机械性能高等优点.Bi-2223/Ag超导带材制备过程需经过多次反复的热处理和中间轧制过程,本文结合控轧控冷工艺特点,通过控制带材中间轧制制度和控制热处理冷却速度,研究了压下量和冷却条件对Bi-2223相变和其微观结构的影响,并借助SEM、XRD等方法对带材样品进行了观察,实验结果表明:合理的控轧控冷条件能够改善Bi-2223/Ag的微观结构并能够有效提高其电性能.这为控轧控冷技术在Bi-2223/Ag超导带材制备中的应用提供了初步理论依据,同时为形变热处理工艺提供了新的优化方向.     

欧姆接触中接触电阻率的计算

从欧姆接触电阻率的定义出发,先从理论上介绍了热离子发射、热离子场发射和场发射三种不同情况下欧姆接触电阻率的计算公式,然后详细地从实验上综合各种测试方法,并讨论了其利弊．     

应用分离涡模型计算斜圆柱孔气膜冷却

分离涡模型(DES,Detached eddy simulation)兼有雷诺时均湍流模型计算量较小和大涡模拟计算精度高的优点。本文利用DES对平板单斜圆柱孔的气膜冷却进行了数值模拟,并将结果同RANS湍流模型的计算结果以及实验数据相比较,表明DES能有效弥补RANS湍流模型在计算三维不均匀非定常湍流场的不足,更接近实际地反映了气膜冷却中的流动和换热的本质规律。     

偶氮聚合物薄膜的全光极化研究

报告了分散红共聚物膜HMMM-DR1,HMMM-DR19和偶氮侧链聚合物膜PCN6和PCN2的合成和制备, 并以HMMM-DR1和PCN6为代表比较研究了这两种具有不同吸收性质材料的全光极化特性,研究了他们的实时极化和弛豫过程,对他们的全光极化性质作了最基本的表征.研究了倍频光吸收对薄膜光极化效率的影响,讨论了偶氮聚合物材料光诱导二阶非线性极化率的效率和倍频光透射率之间的折衷关系,这对实用化的全光器件的研制是至关重要的.实验确证了在PCN6薄膜中实现了准相位匹配.对厚膜中光诱导二阶非线性极化率的弛豫抑制效应作出解释.     

Design strategy for flat-field Schmidt optical system

The present study provides the theory base for designing flat-field Schmidt optical systems, based on the wavefront aberration of Petzval field curvature, a mathematic model of the Petzval radius is setting up. The radius of Petzval image surface is not equal to the focal length of the primary mirror or the focal length of the system. An aberration balancing method for flat-field Schmidt optical systems design is proposed: did not change parameters of the corrector, through adjusting the distance between the plate and the mirror to realize aberration equilibrium. The total physical track is more compact than equilibrium before.     

Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.     

超声波提取-氢化物发生-原子荧光光谱法测定稻米中的硒

建立了超声波提取-氢化物发生-原子荧光光谱法测定稻米硒含量的分析方法,对仪器条件和反应条件进行了选择、优化.样品加硝酸-高氯酸(3+2)混酸,超声波提取20min,热消解.在铁氰化钾-盐酸体系中,采用校准曲线法定量分析.结果表明,大米标准物质中硒的测定值与标准值相吻合.该法线性范围为0-20μg/L,检出限为0.2μg/L,回收率为92.4％-103.9％,相对标准偏差为3.1％-5.8％.方法准确、灵敏、简便、快速,是测定稻米中硒含量的理想方法.