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131.
The Bekenstein–Hawking entropy of certain black holes can be computed microscopically in string theory by mapping the elusive
problem of counting microstates of a strongly gravitating black hole to the tractable problem of counting microstates of a
weakly coupled D-brane system, which has no event horizon, and indeed comfortably fits on the head of a pin. We show here
that, contrary to widely held beliefs, the entropy of spherically symmetric black holes can easily be dwarfed by that of stationary
multi-black-hole “molecules” of the same total charge and energy. Thus, the corresponding pin-sized D-brane systems do not
even approximately count the microstates of a single black hole, but rather those of a zoo of entropically dominant multicentered
configurations.
Fourth Award in the 2007 Essay Competition of the Gravity Research Foundation. 相似文献
132.
Kwang-Hua W. Chu 《International Journal of Theoretical Physics》2007,46(12):3230-3233
The modified Gross–Pitaevskii equation was derived and solved to obtain the 1D solution in the zero-energy limit. This stationary
solution could account for the dominated contributions due to the kinetic effect as well as the chemical potential in inhomogeneous
Bose gases. 相似文献
133.
We compare the efficiency of two Faddeev-type approaches for the nuclear three-body Coulomb problem. The first one is a modification
of Noble’s approach, the second one is due to Sasakawa and Sawada. In an integral-equation formulation both of these methods
rely on the same Green’s operators and driving terms. The differences lie in the treatment of the long-range Coulomb potentials.
Numerical examples show that the modified Faddeev-Noble approach provides for faster convergence. 相似文献
134.
After a discussion of a space of test functions and the corresponding space of distributions, a family of Banach spaces (B, ∥ ∥B) in standard situation is described. These are spaces of distributions having a pointwise module structure and also a module structure with respect to convolution. The main results concern relations between the different spaces associated to B established by means of well-known methods from the theory of Banach modules, among them B0 and , the closure of the test functions in B and the weak relative completion of B, respectively. The latter is shown to be always a dual Banach space. The main diagram, given in Theorem 4.7, gives full information concerning inclusions between these spaces, showing also a complete symmetry. A great number of corresponding formulas is established. How they can be applied is indicated by selected examples, in particular by certain Segal algebras and the Ap-algebras of Herz. Various further applications are to be given elsewhere. 相似文献
135.
J. W. Barrett 《International Journal of Theoretical Physics》1991,30(9):1171-1215
This article is about a different representation of the geometry of the gravitational field, one in which the paths of test bodies play a crucial role. The primary concept is the geometry of the motion of a test body, and the relation between different such possible motions. Space-time as a Lorentzian manifold is regarded as a secondary construct, and it is shown how to construct it from the primary data. Some technical problems remain. Yang-Mills fields are defined by their holonomy in an analogous construction. I detail the development of this idea in the literature, and give a new version of the construction of a bundle and connection from holonomy data. The field equations of general relativity are discussed briefly in this context. 相似文献
136.
137.
138.
The Dantzig-Wolfe reformulation principle is presented based on the concept of generating sets. The use of generating sets allows for an easy extension to mixed integer programming. Moreover, it provides a unifying framework for viewing various column generation practices, such as relaxing or tightening the column generation subproblem and introducing stabilization techniques. 相似文献
139.
Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface. 相似文献
140.
The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl2-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH4/H2/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl2 discharges is smooth, whereas that after etching in CH4/H2/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH4/H2/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH4/H2/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication. 相似文献