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201.
Generation of a coherent electromagnetic radiation in the far IR (THz) spectral range upon excitation of a semiconductor InAs crystal by 70-fs Ti: sapphire laser pulses is studied. The effect of a magnetic field of different orientation on generation in the submillimeter-wavelength range is analyzed. Placing the crystal into the magnetic field of an optimized permanent magnet with a strength of 5 kOe aligned along the surface of the semiconductor increased the power of generated radiation by a factor of six compared with that in the absence of the field. For the average pump-laser output power of 150 mW and repetition rate of 80 MHz, the average power of the THz radiation reached 100 nW. For detection of ultrashort pulses of the THz radiation, we used, for the first time, a highly sensitive uncooled optoacoustic detector, which detected signals with a power lower than 1 nW.  相似文献   
202.
 The development of a tool for calculating resonances and bound states in three-body systems described by a single-potential energy surface is reported. The method has been applied to the antiprotonic helium, doubly excited states in helium, the 11Li nuclear halo, the NeICl van der Waals molecule, and the recently found FHD reaction complex. Received November 26, 2001; accepted for publication November 28, 2001  相似文献   
203.
Several a priori tests of a systematic stochastic mode reduction procedure recently devised by the authors [Proc. Natl. Acad. Sci. 96 (1999) 14687; Commun. Pure Appl. Math. 54 (2001) 891] are developed here. In this procedure, reduced stochastic equations for a smaller collections of resolved variables are derived systematically for complex nonlinear systems with many degrees of freedom and a large collection of unresolved variables. While the above approach is mathematically rigorous in the limit when the ratio of correlation times between the resolved and the unresolved variables is arbitrary small, it is shown here on a systematic hierarchy of models that this ratio can be surprisingly big. Typically, the systematic reduced stochastic modeling yields quantitatively realistic dynamics for ratios as large as 1/2. The examples studied here vary from instructive stochastic triad models to prototype complex systems with many degrees of freedom utilizing the truncated Burgers–Hopf equations as a nonlinear heat bath. Systematic quantitative tests for the stochastic modeling procedure are developed here which involve the stationary distribution and the two-time correlations for the second and fourth moments including the resolved variables and the energy in the resolved variables. In an important illustrative example presented here, the nonlinear original system involves 102 degrees of freedom and the reduced stochastic model predicted by the theory for two resolved variables involves both nonlinear interaction and multiplicative noises. Even for large value of the correlation time ratio of the order of 1/2, the reduced stochastic model with two degrees of freedom captures the essentially nonlinear and non-Gaussian statistics of the original nonlinear systems with 102 modes extremely well. Furthermore, it is shown here that the standard regression fitting of the second-order correlations alone fails to reproduce the nonlinear stochastic dynamics in this example.  相似文献   
204.
The optical properties of Ce3+ in CaSO4, SrSO4 and BaSO4 are reported. The Ce3+ ion shows 4f05d12F5/2,2F7/2 luminescence in all three sulphates. Co-doping with Na+ does not change the local surrounding of the Ce3+ ion, but enhances the amount of Ce3+ ions built in. Under optical excitation, besides the typical Ce3+ doublet emission in the ultraviolet spectral region, band emission around 445 nm was observed. This band emission was not assigned to emission from a Ce3+ centre, but to emission from an impurity-trapped exciton. Under X-ray excitation, both Ce3+ emission and an emission band around 380 nm was observed. This band was assigned to emission from a self-trapped exciton.  相似文献   
205.
The diffraction efficiency and the recording and relaxation times of dynamic reflection holograms, recorded in CdF2 crystals with bistable centers are studied experimentally in the temperature range 20–100°C. In the model experiments which measured the quality of the wave reflected from the hologram, the dynamic wavefront distortions are demonstrated to be efficiently compensated using a holographic corrector based on these crystals. CdF2 crystals with bistable centers are likely to be useful in solving problems of correction of laser light wavefront and image correction in observation telescopes with nonideal primary mirrors.  相似文献   
206.
The adsorption of hydrogen on a clean Cu10%/Ni90% (110) alloy single crystal was studied using flash desorption spectroscopy (FDS), Auger electron spectroscopy (AES), and work function measurements. Surface compositions were varied from 100% Ni to 35% Ni. The hydrogen chemisorption on a-surface of 100% nickel revealed strong attractive interactions between the hydrogen atoms in accordance with previous work on Ni(100). Three desorption states (β1, β2 and α) appeared in the desorption spectra. The highest temperature (α) state was occupied only after the initial population of the β2-state. As the amount of copper was increased in the nickel substrate, desorption from the higher energy binding α-state was reduced, indicating a decrease in the attractive interactions among hydrogen atoms. The hydrogen coverage at saturation was not affected by the addition of copper to the nickel substrate until the copper concentration was greater than 25% at which a sharp reduction in saturation coverage occurred. This phenomenon was apparently due to the adsorption of hydrogen on Ni atoms followed by occupation of NiNi and CuNi bridged adsorption sites, while occupation of CuCu sites was restricted due to an energy barrier to migration.  相似文献   
207.
Translated fromProblemy Ustoichivosti Stokhasticheskikh Modelei. Trudy Seminara, 1988, pp. 115–120.  相似文献   
208.
209.
Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.  相似文献   
210.
The singular-perturbation expansion of the plasma cold-fluid equations for crossed fields in a planar geometry is presented. The general expansion is carried out to third order. Various instabilities that occur in the first, second, and third orders are discussed.  相似文献   
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