Intrinsic magnetic inhomogeneity of Eu substituted La0.7Pb0.3Mno3 single crystals

The study of magnetic and magnetotransport properties of the crystals of (La_1−yEu_y)_0.7Pb_0.3MnO₃ system has been carried out. Eu ions enter the crystals being in trivalent nonmagnetic state. Europium ions possessing of smaller ionic radius in comparison with La ions, induce local distortions of Mn–O–Mn bonds in the system that cause random distribution of magnetic exchange interactions in magnitude and, probably, in sign. The competition of magnetic interactions leads to the appearance of the inhomogeneous magnetic state in the crystals. The enhancement of concentration of Eu ions results in decrease of the Curie temperature and broadening of the inhomogeneous magnetic state area. At y=0–0.4 the coexistence of the paramagnetic phase with conductivity of the polaronic type and the ferromagnetic metallic phase is observed in a bounded temperature interval both above and below T_C. Below T_C the increasing of y up to 0.6 induces the magnetic state representing the coexistence of two different FM phases. These phases are spatially separated due to frustration of FM and AFM exchange interactions on phase boundaries. Above T_C, up to 1.6T_C ferromagnetic clusters exist in a paramagnetic matrix similar to the case of samples with y=0–0.4. Concerning electric properties, the samples with y=0–0.4 reveal the metal–insulator transition at temperature that practically coincides with T_C. The sample with y=0.6 has conductivity of insulator character up to the lowest temperatures. For all investigated compositions y=0–0.6 the CMR effect is observed in the area where the inhomogeneous magnetic state exists. The effect is determined by different conductivity of the coexisting phases, as well as by sensitivity of the inhomogeneous state to external magnetic field.     

Crystal structure and magnetic anisotropy of ludwigite Co<Subscript>2</Subscript>FeO<Subscript>2</Subscript>BO<Subscript>3</Subscript>

Co₃O₂BO₃ and Co₂FeO₂BO₃ single crystals with a ludwigite structure are fabricated, and their crystal structure and magnetic properties are studied in detail. Substituted ludwigite Co₂FeO₂BO₃ undergoes two-stage magnetic ordering at the temperatures characteristic of Fe₃O₂BO₃ (T _N1 ≈ 110 K, T _N2 ≈ 70 K) rather than Co₃O₂BO₃ (T _N = 42 K). This effect is explained in terms of preferred occupation of nonequivalent crystallographic positions by iron, which was detected by X-ray diffraction. Both materials exhibit a pronounced uniaxial magnetic anisotropy. Crystallographic direction b is an easy magnetization axis. Upon iron substitution, the cobalt ludwigite acquires a very high magnetic hardness.     

State of spin glass in SmFeTi<Subscript>2</Subscript>O<Subscript>7</Subscript>

The SmFeTi₂O₇ compound has been synthesized using the solid-phase reaction method. In order to determine the magnetic state, X-ray structural, Mössbauer, calorimetric, and magnetic measurements have been performed. The state of spin glass with the freezing point T _f = 7 K has been found for SmFeTi₂O₇.     

Phase transformations in the Mn-Ge system and in Ge x Mn1 ? x diluted semiconductors

Results of an X-ray diffraction study as well as magnetic and electrical measurements of the solid-state reactions in Ge/Mn polycrystalline films of an 80/20 atomic composition have been presented. It has been shown that the ferromagnetic Mn₅Ge₃ phase is formed first on the Ge/Mn interface after annealing at ??120°C. The further increase in the annealing temperature to 300°C leads to the beginning of the synthesis of the Mn₁₁Ge₈ phase, which becomes dominating at 400°C. The existence of new structural transitions in the Mn-Ge system in the region of ??120 and ??300°C has been predicted on the basis of the presented results and results obtained earlier when studying solid-state reactions in different film structures. The supposition about the general chemical mechanisms of the synthesis of the Mn₅Ge₃ and Mn₁₁Ge₈ phases during the solid-state reactions in the Ge/Mn films of the 80/20 atomic composition and the phase separation in Ge _x Mn_{1 ? x} (x > 0.95) diluted semiconductors has been substantiated.