In situ Synthesis of Oligonucleotides on Plasma Treated Polypropylene Microporous Membrane

Polypropylene microporous membranes were treated with plasma in a mixture of N2 and H2 (1:2 in volume). Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS) and ultra-violet (UV) spectra demonstrated the success of grafting amino groups. The density of the polar amino groups on the membrane surface is about 0.59 μmol/cm^2. The as-treated membranes were successively applied to the in situ synthesis of oligonucleotides and an average coupling yield was more than 98%. The surface feature of the treated membrane is suggested to be responsible for its advantage over a glass slide.     

MEASUREMENTS OF Fe AND Cu K-Shell IONIZATION CROSS SECTIONS BY SLOW ELECTRON IMPACT

ＭＥＡＳＵＲＥＭＥＮＴＳＯＦＦｅＡＮＤＣｕＫ－ＳｈｅｌＩＯＮＩＺＡＴＩＯＮＣＲＯＳＳＳＥＣＴＩＯＮＳＢＹＳＬＯＷＥＬＥＣＴＲＯＮＩＭＰＡＣＴＬｉＴａｉｈｕａＡｎＺｈｕＬｕｏＺｈｅｎｇｍｉｎｇＣｅｎｔｅｒｆｏｒＲａｄｉａｔｉｏｎＰｈｙｓｉｃｓ，Ｉｎｓ...     

The Classification of Exponential Paths in Sp(2)

众所周知，四阶以上辛群中指数型道路的Ｍａｓｌｏｖ指标可以取任意整数．本文给出了二阶辛群中指数型道路的分类及其Ｍａｓｌｏｖ指标的取值范围，指出了与高阶情形的不同之处．     

Algebraic cycles and topology of real Enriques surfaces

For a real Enriques surface Y we prove that every homology class in H₁(Y (R), Z/2) can be represented by a real algebraic curve if and only if all connected components of Y(R) are orientable. Furthermore, we give a characterization of real Enriques surfaces which are Galois-Maximal and/or Z-Galois-Maximal and we determine the Brauer group of any real Enriques surface Y.     

Eu,Dy共掺杂SrAl2O4长余辉材料制备新工艺

活化Al-Sr合金粉末水解制备SrAl₂O₄长余辉材料的前驱体,并采用高温固相反应法制备出Eu,Dy共掺杂的SrAl₂O₄长余辉材料,对其微观结构和发光特性进行了研究。实验结果表明:前驱体中Al、Sr元素在微观状态下分布均匀,所制成的长余辉发光材料的发射主峰位于520nm附近,为典型的Eu²⁺离子4f5d-4f的特征发射,初始亮度达到18cd/m²,余辉时间长达46h。     

Strain analysis of Si by FEM and energy-filtering CBED.

Lattice strains around a platelet oxygen precipitate in Si wafer is studied by energy filtering convergent-beam electron diffraction (CBED) and calculations based on the finite element method (FEM). Local lattice strains are measured from CBD patterns obtained with a probe size less than 2 nm in a specimen thicker than 450 nm. Strains measured are compressive along a direction normal to a plate of the precipitation and tensile along a direction parallel to the plate. Two-dimensional stress fields near the precipitate are obtained with FEM computer analyses by fitting the measured strains. It appears that shear stresses are concentrated at the end of the precipitate edge and the maximum shear stress at an interface between the precipitate and the Si-matrix is 1.9 GPa. It is demonstrated that a combination of the energy filtering CBED and FEM is very useful for the study of local strains near interfaces in semiconductor devices, in particular for the study of stress fields that are too steep for application of the conventional CBED technique.     

Γ-type-invariants associated toPU(2)-bundles and the differentiable structure of Barlow's surface

Supported by a Heisenberg-scholarship of the DFG     

Maximal Lyapunov exponent and rotation numbers for two coupled oscillators driven by real noise

Asymptotic expansions for the exponential growth rate, known as the Lyapunov exponent, and rotation numbers for two coupled oscillators driven by real noise are constructed. Such systems arise naturally in the investigation of the stability of steady-state motions of nonlinear dynamical systems and in parametrically excited linear mechanical systems. Almost-sure stability or instability of dynamical systems depends on the sign of the maximal Lyapunov exponent. Stability conditions are obtained under various assumptions on the infinitesimal generator associated with real noise provided that the natural frequencies are noncommensurable. The results presented here for the case of the infinitesimal generator having a simple zero eigenvalue agree with recent results obtained by stochastic averaging, where approximate ItÔ equations in amplitudes and phases are obtained in the sense of weak convergence.Dedicated to Thomas K. Caughey on the occasion of his 65th birthday.