Investigation and modelling of damping in a plate with a bonded porous layer

Behavior of a poro-elastic material bonded onto a vibrating plate is investigated in the low-frequency range. From the analysis of dissipation mechanisms, a model accounting for damping added by the porous layer on the plate is derived. This analysis is based on a 3-D finite element formulation including poro-elastic elements based on Biot displacement theory. First, dissipated powers related to thermal, viscous and viscoelastic dissipation are explicited. Then a generic configuration (simply-supported aluminium plate with a bonded porous layer and mechanical excitation) is studied. Thermal dissipation is found negligible. Viscous dissipation can be optimized as a function of airflow resistivity. It can be the major phenomenon within soft materials, but for most foams viscoelastic dissipation is dominant. Consequently an equivalent plate model is proposed. It includes shear in the porous layer and only viscoelasticity of the skeleton. Excellent agreement is found with the full numerical model.     

Two scenarios for phase-transformation in disordered media

The reasons for the existence of various scenarios for structural transformations in disordered condensed media, such as liquids and amorphous substances, where both smeared transformations and sharp first-order transitions may occur, were analyzed. The ratio between the spatial scale of structural correlations and the size of the smallest possible region occupied by a new phase in the matrix of initial modification is the key parameter determining the scenario for equilibrium phase transformations in liquids. In amorphous substances, the experimentally observed transformations occur far from equilibrium, and the possible size of the region occupied by the new phase corresponds to the minimal nucleus size. For some amorphous solids, quantitative analysis of the transformation width was carried out and the main classes of covalent substances, in which the smeared or sharp transitions occur, were revealed. Specific features of the interparticle interactions determining various transformation scenarios are discussed.     

Semiconductor Detectors, Mixers, and Frequency Multipliers for the Terahertz Band

The state of the art in the development of semiconductor detectors, mixers, and frequency multipliers based on Schottky-barrier diodes (SBDs) and heterojunction structures for uncooled terahertz receivers is reviewed. The present status of this field features a transition from quasi-optical designs based on dot-matrix, whisker-contacted SBDs to the designs with hybrid-integrated and monolithic constructions on the planar SBD base, which are positioned in a waveguide mount. The high-level performance of these planar devices is achieved by partially or completely removing or changing semiconductor substrates and/or using membrane constructions incorporated in the waveguide.     

Integral Newton-Type Polynomials with Continual Nodes

We construct an integral Newton-type interpolation polynomial with a continual set of nodes. This interpolant is unique and preserves an operator polynomial of the corresponding degree.     

An Alternative Approach to the Extraction of Structure Functions in Deep Inelastic e-p Scattering at 5 to 20 GeV

Two structure functions W1(x,Q2) and W2(x,Q2) are determined by using the cross sections measured in the deep inelastic electron-proton scattering experiments at Stanford Linac in the energy range of 5 to 20 GeV. In this paper an alternative mathematical approach have been used in such determination, resulting in a larger number of points in the graphs of the structure functions.     

Radiospectroscopic and dielectric spectra of nanomaterials

The shape of lines in the radiospectroscopic (NMR and EPR) and dielectric spectra of materials formed by nanoparticles (hereafter, nanomaterials) is analyzed theoretically. The theory is developed in the framework of the core and shell model according to which a nanoparticle consists of two regions whose properties are affected and unaffected by the surface, respectively. The changes in the resonance frequency, the relaxation time, and the static permittivity due to the surface tension are taken into account, and the Gaussian and Lorentzian shapes of homogeneously broadened lines are considered. The inhomogeneous broadening of the spectral lines is examined for several types of nanoparticle size distributions. It is demonstrated that the splitting of the initial lines in the spectra of bulk systems into pairs of lines with a decrease in the particle size is a specific feature of the spectra of nanoparticles. The intensities and half-widths of the lines are investigated as functions of the parameters of the size distribution of nanoparticles. The results of theoretical calculations are compared with recent experimental data on the ¹⁷O and ²⁵Mg NMR spectra of nanocrystalline MgO. The theoretical dependences of the intensity, the resonance frequency, and the half-width of the spectral lines are in good agreement with the experimental data. The proposed theory offers a satisfactory explanation of the behavior of the static permittivity in BaTiO₃ ceramic materials with nanometer-sized grains.     

Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca<Subscript>4</Subscript>Ga<Subscript>2</Subscript>S<Subscript>7</Subscript>: Eu<Superscript>3+</Superscript> single crystals

The current-voltage characteristics of Ca₄Ga₂S₇: Eu³⁺ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca₄Ga₂S₇: Eu³⁺ single crystals are high-resistance semiconductors with a resistivity of ～10⁹ Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×10¹⁴ to 2.7×10¹⁵ cm^?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×10³ V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×10⁴ V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level.