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991.
This paper investigates algorithms of motion planning for a six-legged walking machine over complex terrain. Application of the Rodrigues-Hamilton parameters for describing the orientation of the body enables one to develop algorithms of motion planning for the body and legs in an absolute coordinate frame with automatic adaptation to the surface. Experiments with a laboratory scale walking machine have demonstrated the efficiency of proposed algorithms. __________ Translated from Fundamentalnaya i Prikladnaya Matematika, Vol. 11, No. 7, pp. 197–206, 2005.  相似文献   
992.
993.
The energy levels of neutral anion (VA) and cation (VC) vacancies and antisite defects are calculated for the anion CA and cation AC sublattices of III–V semiconductors. An averaged energy level position for these defects is estimated to be Eav abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total energies of formation of VA, VC and antisite CA, AC defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and stabilization of the Fermi level in the proximity of the local charge electroneutrality level. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 17–22, May, 2007.  相似文献   
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997.
The charge distribution of fragments originatingfrom the fission of the 236U compound nucleus is calculated within a stochastic approach based on Langevin equations. The elongation coordinate, the neck-thickness coordinate, and the charge-asymmetry coordinate are chosen as collective variables. The friction parameter of the charge mode is calculated on the basis of two nuclear-viscosity mechanisms, that of one-body and that of two-body dissipation. It is shown that the Langevin approach is applicable to studying isobaric distributions. In addition, the charge distribution in question is studied as a function of the excitation energy of the compound nucleus and as a function of the coefficient of two-body viscosity.  相似文献   
998.
There has been renewed interest in the structure of III-V compound semiconductor (001) surfaces caused by recent experimental and theoretical findings, which indicate that geometries different from the seemingly well-established dimer models describe the surface ground state for specific preparation conditions. I review briefly the structure information available on the (001) surfaces of GaP, InP, GaAs and InAs. These data are complemented with first-principles total-energy calculations. The calculated surface phase diagrams are used to explain the experimental data and reveal that the stability of specific surface structures depends largely on the relative size of the surface constituents. Several structural models for the Ga-rich GaAs (001)(4×6) surface are discussed, but dismissed on energetic grounds. I discuss in some detail the electronic properties of the recently proposed cation-rich GaAs (001)ζ(4×2) geometry. Received: 18 May 2001 / Revised version: 23 July 2001 / Published online: 3 April 2002  相似文献   
999.
The adsorption of nonionic surfactant Triton X-100 on quartz sand and methylated quartz sand from water and toluene was investigated by means of spectrophotometry, the radiotracer technique, and wetting angle measurements.  相似文献   
1000.
The linear dispersion relation of a backward-wave oscillator (BWO), derived earlier by the authors, is modified to include effects of RF surface current at the beam-vacuum interface. This modified dispersion relation results in an unstable interaction between the slow cyclotron mode (SCM) and the structure mode in addition to the conventional Cherenkov instability caused by the slow space charge mode. Numerical analysis is then carried out using parameters of a BWO experiment at University of Maryland. Fine structure of the SCM instability is elucidated. The analysis indicates that BWO radiation would not be suppressed near cyclotron absorption in an infinitely long system.  相似文献   
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