Attenuation of electromagnetic waves in a semiconductor superlattice in a magnetic field

Magnetoplasma waves and inhomogeneous (complex) waves in an infinite semiconductor superlattice in a magnetic field are studied, and dispersion curves are obtained. It is shown analytically and numerically that, in periodic structures, among inhomogeneous waves, there are many complex waves for which the imaginary part of the wave vector is greater than the real part. The effect of dissipation in a medium on the dispersion curves of magnetoplasma waves is examined. The dependence of the minimum phase velocity on the collision frequency and the magnetic field strength is studied.     

Diffusion of a low-soluble impurity in a solid matrix

An analytical expression for the concentration profile of a low-soluble diffusant in a sample is derived for a high-capacity diffusion source. The model is checked by determining the diffusion coefficient of yttrium in beryllium.     

Controlling the diffusion process via time-variable diffusion coefficient

The establishment of the steady-state dopant profile in a medium with a time-variable diffusion coefficient is considered within the approach proposed previously for estimating mass-and heat-transfer time characteristics. It is shown that the time it takes for the equilibrium concentration to set in may be increased or decreased by appropriately choosing the law of variation of the diffusion coefficient.     

Low-power RF plasma sources for technological applications: II. plasma sources under anomalous skin effect conditions

A theory of a planar disk-shaped RF plasma source under anomalous skin effect conditions is developed. In the absence of an external magnetic field, such conditions are satisfied for transverse electromagnetic waves with phase velocities below the electron thermal velocity, and, in the presence of this field, they are satisfied for electron cyclotron waves with frequencies corresponding to the resonant absorption line. For each of these cases, the RF field power deposited in a plasma with given parameters is determined and the equivalent plasma resistance is calculated.     

Determination of the glueball mass spectrum with allowance for spin-orbital interactions

The mass spectrum of a coupled state is analytically determined. The mechanism of production of a constituent mass of particles forming a coupled state is explained. The change of the coupled state and constituent particle component masses attendant to changes of the coupling constant is analyzed. The mass spectrum of a two-gluon glueball is determined with allowance for spin-orbital and spin-spin interactions.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 33–41, December, 2004.     

On the Nature of Radiation Resistance in Compensated Silicon

Russian Physics Journal -     

Electrophysical and Thermal Parameters of Thermal Plasma in a High-Frequency Induction Discharge

A semiempirical model is proposed for the calculation of electrical, magnetic and thermal parameters of the plasma of a high-frequency induction discharge. The model is based on solving a system of two-dimensional Maxwell equations written for a cylindrical coordinate system.     

Special Theory of Relativity in Electrodynamics

A method of teaching of one of the divisions of electrodynamics devoted to relativity theory is suggested. The presentation is based on the four-dimensional formalism, which allows a number of fundamental physical phenomena to be considered from a unified position. The content is in full conformity with the approved standard programs for students and postgraduates of radio physical and radio technical specialities of universities. The methods can be useful to the teachers, scientific workers, and engineers concerned with other directions and specialities.     

A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.