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Ohne Zusammenfassung

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Book reviews

     

Extended Rees algebras and mixed multiplicities

Partially supported by the general research fund at the University of Kansas     

Highly accurate calculation of radial spheroidal functions

A new method for calculating the radial spheroidal functions of the first kind is proposed for the arguments that are greater than unity in modulus. A well-known representation of these functions is refined and used for this purpose. The constructs and the software implementation proposed in the paper provide an efficient tool for the calculation of the functions with a desired accuracy in a wide range of parameters.     

Metastable States in Antiprotonic Helium Atoms: An Island of Stability in a Sea of Continuum

 In this contribution we consider a phenomenon of metastable states in antiprotonic helium atoms, precise spectroscopy of these states and a present-day study of the electromagnetic properties of antiprotons. Received October 16, 2001; accepted for publication November 13, 2001     

Effect of hydrogen on the photoelectronic properties of GaAs/InGaAs quantum-well heterostructures with an island palladium layer on the surface

The effect of hydrogen on the photoluminescence and planar conductivity of GaAs/InGaAs quantum-well heterostructures with an island Pd layer at the anodically oxidized surface was studied. Unlike continuous deposited Pd layers, island layers do not cause the formation of defects in the GaAs surface region and yet the Pd layer maintains high catalytic activity with respect to hydrogen. It is found that the thermal treatment of such a structure in a hydrogen atmosphere causes atomic-hydrogen passivation of the defects in quantum wells. Studies of the characteristics of planar photoresistors with an island Pd layer acting as hydrogen sensors show that their hydrogen detectivity is approximately two orders of magnitude higher than that of diode structures with continuous Pd layers.     

Why and how to avoid standard kinetic equations I. Principles and band conduction problem

A review of ideas leading to full rejection of any finite or partially-infinite order kinetic equation linearized in external field is given on grounds of the time-convolution Generalized Master Equations (GME). By two examples (two-level and band conduction problem), it is shown how standard kinetic equations result from GME in the lowest order approximations which obscure, however, a direct correspondence with the Kubo linear response theory. Without approximations, on the other hand, the rigorous approach is shown to be fully equivalent with the Kubo results. It is argued and illustrated that usual technical simplicity and seeming physical lucidity of standard theories (connected with the presence of field-independent transfer or scattering rates in the fielddependent linearized theory) are just owing to structural features which are solely due to the lowest order approximations involved. These features (i.e. also the possibility of standard physical interpretation of kinetic phenomena) are proved to disappear completely as far as the theory goes properly to higher orders.     

Some empirical relations for electron mobility in II–VI compound semiconductors

Electron mobility has been calculated in a number of binary II–VI compound semiconductors using a displaced Maxwellian distribution function and taking the various scattering mechanisms into consideration at different lattice temperatures and for various amounts of ionized impurity concentrations. It is observed that the low field mobility values can be expressed by a cubic power relationship with lattice temperature and with ionized impurity concentration using a least mean square fit technique with an accuracy better than 5 per cent. Similarly, the field dependence of mobility can also be expressed as a power series of the applied electric field. It is suggested that these equations can be profitably used for a quick estimation of mobility values as a check on experiments and also as sufficiently accurate formulae for simulation and modelling purposes.