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Open circuit voltage (OCV) measurements in H2O/air concentration cells at T<580 K using Yb-doped SrCeO3 electrolyte indicate that under these conditions, protons are transported through the electrolyte as -ve ions, possibly as hydroxyl (OH) ions. The H+ ionic transport, which is generally reported, becomes the dominant mode for H2O/air concentration cells at temperatures greater than 750 K or when H2O/air electrodes are replaced by H2/Ar, and the anomalous OCV sign disappears. The combination of low temperature and the presence of hydrogen and oxygen as provided by the H2O/air system appears to be necessary for the postulated hydroxyl ion electrode reactions to take place. In addition to OCV measurements, results from impedance spectroscopy are used to provide evidence in support of the suggested hydroxyl ion mode of protonic transport under the specified conditions. These findings are directly relevant in the development of novel humidity sensors in the temperature range 450–580K and is reported in a separate paper in this conference. Paper presented at the 3rd Euroconference on Solid State Ionics, Teulada, Sardinia, Italy, Sept. 15–22, 1996  相似文献   
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The Thoms effect observed with water-soluble cationic copolymer of acrylamide was studied in relation to the concentration, molecular weight, and molecular weight polydispersity of the polymeric additive, with its composition and composition polydispersity being constant.  相似文献   
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We prove a character formula for any finite-dimensional irreducible representationV of the “queer” Lie superalgebra g=q(n). It expresses chV in terms of the multiplicities of the irreducible g-subquotients of the cohomology groups of certain dominant g-bundles on the Π-symmetric projective spaces (i.e., on the homogeneous superspacesG/P whose reduced space is a projective space, whereG=Q(n)). We also establish recurrent relations for the above multiplicities, and this enables us to compute explicitly chV for any givenV. This provides a complete solution to the Kac character problem for the Lie superalgebraq(n). Finally, we consider the particular cases ofq(2), q(3), andq(4) in which we compare the new character formula with the generic character formula of [12]. Translated from Itogi Nauki i Tekhniki, Seriya Sovremennaya Matematika i Ee Prilozheniya. Tematicheskie Obzory. Vol. 41, Algebraic Geometry-7, 1997.  相似文献   
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We report on the first observation and studies of a weak delocalizing logarithmic temperature dependence of the conductivity, which causes the conductivity of the 2D metal to increase as T decreases down to 16 mK. The prefactor of the logarithmic dependence is found to decrease gradually with density, to vanish at a critical density n c , 2∼2×1012 cm−2, and then to have the opposite sign at n>n c ,2. The second critical density sets the upper limit on the existence region of the 2D metal, whereas the conductivity at the critical point, G c ,2∼120e 2/h, sets an upper (low-temperature) limit on its conductivity. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 6, 497–501 (25 September 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.  相似文献   
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The concentration and chemical state of copper in the subsurface region of Cu/SiO2 composite films obtained by simultaneous magnetron sputtering from two sources (Cu and SiO2) are determined by x-ray photoelectron spectroscopy (XPS). It is established that copper in the as-grown film is primarily in the form of unoxidized atoms dispersed in a SiO2 matrix. Annealing of the film results in practically no oxidation, but about 70% of the copper atoms condense into metallic clusters with sizes below 10 Å in the subsurface region and about 50 Å in the bulk of the film. The changes in the binding energy of core electrons, and especially in the energies of Auger electrons, are so large in this situation that photoelectron and Auger spectroscopy are efficient methods for monitoring the chemical state of this composite material.  相似文献   
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The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such structures is discussed. Zh. Tekh. Fiz. 67, 97–99 (December 1997)  相似文献   
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