Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots

The variation of material properties along the growth axis of single crystal LEC GaAs ingots is studied. Parameters investigated include concentration and lateral variation of EL2, photoluminescence intensity, resistivity, the concentration of extrinsic shallow acceptors and, after test implantation, the sheet resistivity. Correlations between the observed trends are identified and discussed in terms of compensation and segregation. In general, a very satisfactory homogeneity is found. Remaining variations are identified and evaluated with respect to their device-relevant consequences.     

Multielement analysis of biological reference materials by total-reflection X-ray fluorescence and inductively coupled plasma mass spectrometry in the semiquant mode

Summary Total-reflection X-ray fluorescence (TXRF) and inductively coupled plasma mass spectrometry (ICP-MS) were used for the analysis of two biological reference materials. The quantifications were carried out after addition of one single standard element which serves as an internal standard in both cases. The results of TXRF analysis were good to satisfactory. The method is therefore suitable for fast multielement analysis, because it needs no special calibration specimens. The results of ICP-MS analysis are at least in the order of magnitude of the certified values. In some cases recoveries fit very well. For quantitative analysis, however, the use of the standard addition method or the calibration with external standards is required.     

Pressure and temperature dependence of the electric field gradient (EFG) in CdS

Using the time differential perturbed angular correlation technique (TDPAC), the electric hyperfine interaction of¹¹¹Cd in the II-VI-semiconductor CdS was investigated. The results of the temperature and pressure dependence of the electric field gradient (EFG) are discussed. The binding energyE _b for¹¹¹In at a Cd lattice site and a Cd vacancy (¹¹¹In_Cd–V_Cd–pair) could be estimated to 340 meV±80 meV by means of an Arrhenius-Plot. The disappearance of the 79 MHz and 73 MHz frequencies under a pressure of about 30 kbar could be due to their vacancy character or to the beginning of the phase transition to rocksalt structure.