Vibration analysis of planar serial-frame structures

A hybrid analytical/numerical method is proposed that permits the efficient dynamic analysis of planar serial-frame structures. The method utilizes a numerical implementation of a transfer matrix solution to the equation of motion. By analyzing the transverse and longitudinal motions of each segment simultaneously and considering the compatibility requirements across each frame angle, the undetermined variables of the entire frame structure system can be reduced to six which can be determined by application of the boundary conditions. The main feature of this method is to decrease the dimensions of the matrix involved in the finite element methods and certain other analytical methods.     

Ultrafast carrier dynamics in ferromagnetic InGaMnAs

We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons.     

InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.     

Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn²⁺3d⁵+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state.     

Weighted oscillator strengths and lifetimes for the S IX and S X spectra

The weighted oscillator strengths (gf) and the lifetimes presented in this work were carried out in a multi configuration Hartree-Fock relativistic (HFR) approach. In this calculation, the electrostatic parameters were optimized by a least-squares procedure, in order to improve the adjustment to experimental energy levels. This method produces gf-values that are in better agreement with intensity observations and lifetime values that are closer to the experimental ones. In this work, we presented all the experimentally known electric dipole S IX and S X spectral lines.     

Generalized Airy Functions and the Cohomological Intersection Numbers

We compute explicitly the cohomological intersection numbers for the basis and extend the result of Iwasaki and Matsumoto. To this end, we establish the exterior power structure for the polynomial twisted de Rham cohomology group associated with the generalized Airy functions at a point of extended Veronese variety. Using this structure, we introduce a natural basis of the twisted de Rham cohomology group coming from that of the one-dimensional case, which is considered as an analogue of a flat basis of the Jacobi ring of A-type simple singularity.