Use of ultrafine-dispersed nanodiamond for selective deposition of boron-doped diamond films

A suspension of ultrafine-dispersed nanodiamond was used for introducing (in particular, selectively) high-density centers of diamond nucleation on various substrates. High-quality doped diamond films to be used as electrochemistry electrodes were deposited from the gas phase in a microwave discharge on certain substrates treated using ultrafine-dispersed nanodiamond. A uniform distribution of nucleation centers with concentrations greater than 10¹⁰ cm^-2 on silicon substrates was obtained. Electrochemical current-potential curves were measured for continuous films. Diamond meshes of different transparency were grown using selective nucleation. Successful production of high-quality doped diamond meshes gives grounds to consider them the most promising electrodes for use in electrochemistry.     

Microstructure and mechanical characteristics of nanodiamond-SiC compacts

Superhard nanodiamond-SiC ceramics are prepared by infiltrating liquid Si into porous nanodiamond compacts under pressure. Synthesized samples are 2.2 mm thick and 3–4 mm in diameter. The effect of particle size of dynamically synthesized nanodiamond powders on silicon infiltration and SiC phase formation is studied. It is established that silicon does not penetrate into the pores of nanodiamond powders if the original particle size is smaller than 0.5–1.0 μm. The critical pore size for infiltration is 100–200 nm. A study of the microstructure of the samples showed the presence of the nanometer-and submicron-scale SiC phase. The ultrasound velocities are measured in the prepared compacts, and the elastic moduli are calculated. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 4, 2004, pp. 734–736. Original Russian Text Copyright ? 2004 by Ekimov, Gromnitskaya, Mazalov, Pal’, Pichugin, Gierlotka, Palosz, Kozubowski.     

Electrochemical reduction of 1-([(4-halophenyl)imino]methyl)-2-naphthols in aprotic media.

The electrochemical reduction of 1-([(4-halophenyl)imino]methyl)-2-naphthols on graphite electrodes was studied using cyclic voltammetry, chronoamperometry, constant-potential coulometry and preparative constant-potential electrolysis techniques. The data revealed that the reduction on graphite was irreversible and followed an EC mechanism. The diffusion coefficients and the number of electrons transferred were determined using the chronoamperometric Cottrell slope and the ultramicro disc Pt-electrode steady-state current. The number of electrons was also determined by bulk electrolysis. The compounds were subjected to constant-potential preparative electrolysis and the electrolysis products were purified and identified by spectroscopic methods. Based on these findings, a mechanism for the electro-reduction process is proposed.     

Diffusion in poro‐plastic media

A model is developed for the flow of a slightly compressible fluid through a saturated inelastic porous medium. The initial‐boundary‐value problem is a system that consists of the diffusion equation for the fluid coupled to the momentum equation for the porous solid together with a constitutive law which includes a possibly hysteretic relation of elasto‐visco‐plastic type. The variational form of this problem in Hilbert space is a non‐linear evolution equation for which the existence and uniqueness of a global strong solution is proved by means of monotonicity methods. Various degenerate situations are permitted, such as incompressible fluid, negligible porosity, or a quasi‐static momentum equation. The essential sufficient conditions for the well‐posedness of the system consist of an ellipticity condition on the term for diffusion of fluid and either a viscous or a hardening assumption in the constitutive relation for the porous solid. Copyright © 2004 John Wiley & Sons, Ltd.     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

The effect of complexing processes on energy transfer Tl+→Gd3+ and Tl+→Tb3+ in glass

T. Shevchenko Kiev University, 252022 Kiev, Pr. Akad. Glushakova, 6, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 192–196, May–June, 1995.     

Optical properties of Fe-doped silica films on Si

Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO₂:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl₃-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements.     

Preparation of MgB<Subscript>2</Subscript>/Fe superconductor wire by electrical self-heating

MgB₂/Fe wires were prepared by electrical self-heating of in situ powder-in-tube wires for the first time at ambient conditions. Characterization of the wires processed at 750 °C, 800 °C and 850 °C for 15 min by XRD, SEM, ϱ–T, susceptibility and J_C measurements shows that the MgB₂ formed is of high quality particularly with respect to phase purity and transport J_C. The method considerably reduces the overall energy consumption vis-à-vis the production cost, simplifies the complexity of the fabrication procedure and is promising for manufacture of high-quality MgB₂ superconducting wires. PACS 74.70.Ad; 74.62.Bf; 74.25.Fy; 74.25.Ha; 81.20.Hy