Surface-field induced interband tunneling in InAs

Metal/insulator/semiconductor junctions are prepared on degeneratep-type InAs substrates with hole concentrations ranging from 2.3×10¹⁷ cm^–3 to 2.7×10¹⁸ cm^–3. The low work function of the top metal Yb, Al, or Au and charged interface states influence a two-dimensional (2D) electron inversion layer at the InAs surface. The insulator barrier that is formed by thermal oxidation is designed sufficiently thin, so that the bias voltage applied at the metal electrode mainly drops across the depletion layer separating the electron channel from the bulk. The current-voltage (I–V) characteristics exhibit strong negative differential conductance due to interband, tunneling from the 2D subband into the 3D valence band with peak-to-valley current ratios up to 3.1, 18, and 32 at 300 K, 77 K, and 4.2 K, respectively. In agreement with a theoretical model based on coherentelastic tunneling, the form of the I–V curves resembles those of double-barrier resonant tunnel devices rather than those of 3D Esaki diodes. The series resistance is obtained from the saturation of the differential conductance dI/dV at high forward bias and from the shift of structures in d² I/dV ² arising from phonon assisted tunneling.Dedicated to G. Lautz on the occasion of his 65th birthday     

Approaches to improving critical current density of YBCO superconducting thick films deposited by electrophoresis

The irreversibility field (Hirr) of Y-based superconductor is much higher than that of Bi-based superconductor. Y-based superconductor is capable of maintaining stable electrical currents in high magnetic field and electric field, so it is a better suited mate-rial for electric-current applications. Commonly, the Y-based tapes comprise a YBCO thick film deposited on a flexible substrate, typically with an intermediate buffer layer, and an overcoat of noble metal. In this process, the interm…     

Towards molecular-scale electronics and biomolecular self-assembly

This paper provides an overview of recent research developments in the field of nanoelectronics with organic materials such as carbon nanotubes and DNA-templated nanowires. Carbon nanotubes and gold electrodes are chemically functionalized in order to contact carbon nanotubes by self-assembly. The transport properties of these nanotubes are dominated by charging effects and display clear Coulomb blockade behaviour. A different approach towards nanoscale electronics is based on the molecular recognition properties of biomolecules such as DNA. As an example, DNA is stretched between electrodes using a molecular combing technique. A two-step metallization procedure leads to the formation of highly conductive gold nanowires.     

Amorphization of Al32Ge68 in a slow heating run studied by NMR

Amorphization of Al₃₂Ge₆₈ at normal pressure, starting from the thermobarically quenched high-pressure crystalline metallic γ-phase, was studied in a slow heating run by performing NMR field-sweep experiments. In the temperature interval from 77 to 300 K the ²⁷Al central line exhibits a continuous broadening and a positive frequency shift. Close to 300 K rather abrupt changes were observed, where the shift changed its sign, and the line width jumped to its highest value. The discontinuous course of the phase changes indicates that the amorphization process proceeds via a sequence of intermediate metastable states, which can be ‘overheated’ in a slow heating run and consequently transform in an explosion-like manner to the final amorphous state at a well-defined temperature. The frequency shift could be decomposed into the negative second-order quadrupolar shift and the positive Knight shift. The change of the shift sign from positive to negative at 300 K reflects the vanishing tendency of the Knight shift upon heating and is compatible with the conduction-electron localization upon structure amorphization.     

The “corset effect” of spin-lattice relaxation in polymer melts confined in nanoporous media

Linear polyethylene oxides with molecular weightsM _w of 1665 and 10170 confined in pores with variable diameters in a solid methacrylate matrix were studied by proton field-cycling nuclear magnetic resonance relaxometry. The pore diameter was varied in the range of 9–57 nm. In all cases, the spin-lattice relaxation time shows a frequency dependence close toT ₁∞ v^3/4 in the range ofv=3·10^?1-2·10¹ MHz as predicted by the tube-reptation model. This protonT ₁ dispersion essentially reproduces that found in a previous deuteron study (R. Kimmich, R.-O. Seitter, U. Beginn, M. Möller, N. Fatkullin: Chem. Phys. Lett. 307, 147, 1999). As a feature particularly characteristic for reptation, this finding suggests that reptation is the dominating chain dynamics mechanism under pore confinement in the corresponding time range. The absolute values of the spin-lattice relaxation times indicate that the diameter of the effective tubes in which reptation occurs is much smaller than the pore diameters on the time scale of spin-lattice relaxation experimens. An estimation leads to a valued ^*～0.5 nm. The impenetrability of the solid pore walls, the uncrossability of polymer chains (“excluded volume”) and the low value of the compressibility in polymer melts create the “corset effect” which reduces the lateral motions of polymer chains to a microscopic scale of only a few tenths of a nanometer.     

Model spectral function and superconductivity in BaxK1−xBiO3 (x=0.5-0.7)

The Eliashberg spectral density function is constructed for the superconducting compound Ba_xK_1−xBiO₃ with x=0.5, 0.6, 0.7. The functions, besides yielding some prominent structures, show widely spreading spectra that inhibit lattice instability by yielding not too large values of λ(<1.32). The resulting spectral functions show similar shape as other results, where available, and also successfully reproduce the observed critical temperature, isotope exponent, gap ratio and several other parameters.     

Approximation of multi-scale elliptic problems using patches of finite elements

In this paper we present a method to solve numerically elliptic problems with multi-scale data using multiple levels of not necessarily nested grids. The method consists in calculating successive corrections to the solution in patches whose discretizations are not necessarily conforming. It resembles the FAC method (see Math. Comp. 46 (174) (1986) 439–456) and its convergence is obtained by a domain decomposition technique (see Math. Comp. 57 (195) (1991) 1–21). However it is of much more flexible use in comparison to the latter. To cite this article: R. Glowinski et al., C. R. Acad. Sci. Paris, Ser. I 337 (2003).     

Improvements in Depth Selective Electron Mössbauer Spectroscopy

The conditions for achievement of high resolving power of depth selective conversion electron Mössbauer spectroscopy method at a combined installation ‘electron spectrometer–nuclear gamma-resonance spectrometer’ have been obtained. There has been made a considerable step in development of the method at its realization at a magnetic sector electron spectrometer with double focusing, equipped with electron source (a sample under investigation) of large-area and position-sensitive detector. The paper presents a prospective symmetrical version of a magnetic sector electron spectrometer that allows realizing more completely possibilities of the method. It is noted that the proposed method is particularly valuable for investigations of nanosystems, nanostrutures that contain Mössbauer nuclei.