Dynamics in molecular crystals: An application of proton NMR to selectively protonated biphenyl. Do the rings flip together or independently?

The synthesis of a specific isotopomer, C₆D₄H(ortho)-H(ortho)D₄C₆ of biphenyl is reported. The intramolecular dipolar coupling of the protons leads to a well-resolved single-crystal proton nuclear magnetic resonance (NMR) spectrum and allows one to study the dynamics of the phenyl rings in a unique way. At room temperature and above, the most conspicuous dynamical mode consists of 180° ring flips. The present data together with previous measurements of the total flip rate allow us to conclude that the rings flip almost exclusively independently of each other. Between the incommensurate (IC) phase transition of biphenyl at 38 K andT=250 K, the prominent namical mode consists of oscillatory twists ϕ(t) of the two rings. The data allow us to infer the mean square, (φ²), of these twists. (φ²) is found to grow linearly withT for 50<T<200 K. From the slope of (φ²) vs.T the frequency (the wave number[(v)\tilde]\tilde v) is derived. The result is[(v)\tilde] = 20\tilde v = 20 cm⁻¹. ForT<38 K, the spectra give direct evidence of the IC phase transition and its nature (stripelike rather than quiltlike). The temperature dependence of the magnitude of the order parameter of the IC phase is obtained.     

Electronic spectrum of the three-dimensional Penrose lattice

The electronic spectrum of the three-dimensional Penrose lattice with “central” decoration by atoms is investigated using the tight binding model with nearest-neighbor interaction. Inverse participation ratios, higher moments of density probabilities, and fractal dimensions of the system are determined. The WFs are critical (they have a power-law dependence on the distance) at all energies in the band and are multifractal measures leading to the entire spectrum of the exponents. The results show that the system is in the critical state of the metal-insulator transition. On critical WFs, the cubic root temperature dependence of the conductivity is obtained.     

Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca<Subscript>4</Subscript>Ga<Subscript>2</Subscript>S<Subscript>7</Subscript>: Eu<Superscript>3+</Superscript> single crystals

The current-voltage characteristics of Ca₄Ga₂S₇: Eu³⁺ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca₄Ga₂S₇: Eu³⁺ single crystals are high-resistance semiconductors with a resistivity of ～10⁹ Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×10¹⁴ to 2.7×10¹⁵ cm^?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×10³ V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×10⁴ V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level.     

A microspectroscopic study of the electronic homogeneity of ordered and disordered Sr2FeMoO6

Disordered Sr₂FeMoO₆ shows a drastic reduction in saturation magnetization compared to highly ordered samples, moreover magnetization as a function of the temperature for different disordered samples shows qualitatively different behaviours. We investigate the origin of such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish that e_xtensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples, is responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with composition fluctuations of the type Sr₂Fe_1+x Mo_1-x O₆ with Fe-rich (x > 0) and Mo-rich (x < 0) regions. Dedicated to Prof J Gopalakrishnan on his 62nd birthday.     

Analysis of finite capacity discrete-time <Emphasis Type="Italic">GI</Emphasis>/<Emphasis Type="Italic">Geo</Emphasis>/1 queueing system with multiple vacations

This paper investigates a discrete-time single-server finite-buffer queueing system with multiple vacations in which arrivals occur according to a discrete-time renewal process. Service and vacation times are mutually independent and geometrically distributed. We obtain steady-state system length distributions at prearrival, arbitrary and outside observer's observation epochs under the late arrival system with delayed access and early arrival system. The analysis of actual waiting-time for both the systems has also been carried out. The model has potential application in high-speed computer network, digital communication systems and other related areas.     

Output-feedback control robust stabilization of nonlinear pulse systems

A nonlinear pulse systems with a time-variant continuous linear part is considered. A method for synthesizing an output-feedback robust stabilizing control is suggested.     

Effect of oxygen stoichiometry and microstructure on superconducting properties of YBaCuO films

Microstructure and oxygen stoichiometry of YBaCuO films manufactured by laser ablation are investigated. Dependence of the specific electrical resistivity and superconducting parameters of films on microstructure and oxygen stoichiometry is demonstrated. Conditions of deposition are determined, under which films with minimum microstructure defects and good conducting properties are formed. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 41–45, February, 2007.     

New methods for proving the existence and stability of periodic solutions in singularly perturbed delay systems

We carry out a detailed analysis of the existence, asymptotics, and stability problems for periodic solutions that bifurcate from the zero equilibrium state in systems with large delay. The account is based on a specific meaningful example given by a certain scalar nonlinear second-order differential-difference equation that is a mathematical model of a single-circuit RCL oscillator with delay in a feedback loop.     

The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.