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41.
L. G. Lumbreras R. Gebhard W. Häusler F. Kauffmann-Doig J. Riederer G. Sieben U. Wagner 《Hyperfine Interactions》2003,150(1-4):51-72
Ceramic finds from the Galería de las Ofrendas at Chavín de Huántar and surface finds from the settlement of Chavín were characterised by combining the results of archaeological typology with archaeometric studies using neutron activation analysis, Mössbauer spectroscopy, X-ray diffraction and thin-section microscopy. Sherds from the pyramid Tello are included in the study as representative of local material. The analyses show that the vessels were made from different raw materials and that different firing procedures were used in their production. Sherds of certain styles largely exhibit similar types of Mössbauer patterns and in many instances also have similar element compositions. This supports the archaeological notion that the vessels were brought to Chavín from the provinces, perhaps on the occasion of a festivity. 相似文献
42.
The rate-dependent effects in metallic ferromagnetic materials with magnetization processes attributed to domain-walls motion were studied. The experimental method for eddy-current relaxation time determination was proposed. Some discrepancies between the data and theoretical predictions were observed and discussed. The origin of these discrepancies is accounted for by the decrease of viscous-type relaxation process as the rate of change of averaged magnetization is approaching zero. 相似文献
43.
The synthesis of a specific isotopomer, C6D4H(ortho)-H(ortho)D4C6 of biphenyl is reported. The intramolecular dipolar coupling of the protons leads to a well-resolved single-crystal proton
nuclear magnetic resonance (NMR) spectrum and allows one to study the dynamics of the phenyl rings in a unique way. At room
temperature and above, the most conspicuous dynamical mode consists of 180° ring flips. The present data together with previous
measurements of the total flip rate allow us to conclude that the rings flip almost exclusively independently of each other.
Between the incommensurate (IC) phase transition of biphenyl at 38 K andT=250 K, the prominent namical mode consists of oscillatory twists ϕ(t) of the two rings. The data allow us to infer the mean square, (φ2), of these twists. (φ2) is found to grow linearly withT for 50<T<200 K. From the slope of (φ2) vs.T the frequency (the wave number[(v)\tilde]\tilde v) is derived. The result is[(v)\tilde] = 20\tilde v = 20 cm−1. ForT<38 K, the spectra give direct evidence of the IC phase transition and its nature (stripelike rather than quiltlike). The
temperature dependence of the magnitude of the order parameter of the IC phase is obtained. 相似文献
44.
B. G. Tagiev U. F. Kasumov N. N. Musaeva R. B. Dzhabbarov 《Physics of the Solid State》2003,45(3):426-432
The current-voltage characteristics of Ca4Ga2S7: Eu3+ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca4Ga2S7: Eu3+ single crystals are high-resistance semiconductors with a resistivity of ~109 Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×1014 to 2.7×1015 cm?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×103 V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×104 V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level. 相似文献
45.
Dinesh Topwal U. Manju Sugata Ray S. Raj D. D. Sarma S. R. Krishnakumar M. Bertolo S. La Rosa G. Cautero 《Journal of Chemical Sciences》2006,118(1):87-92
Disordered Sr2FeMoO6 shows a drastic reduction in saturation magnetization compared to highly ordered samples, moreover magnetization as a function
of the temperature for different disordered samples shows qualitatively different behaviours. We investigate the origin of
such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish
that extensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples, is
responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with
composition fluctuations of the type Sr2Fe1+x
Mo1-x
O6 with Fe-rich (x > 0) and Mo-rich (x < 0) regions.
Dedicated to Prof J Gopalakrishnan on his 62nd birthday. 相似文献
46.
47.
Kentsch U. Zschornack G. Grossmann F. Ovsyannikov V. P. Ullmann F. 《Hyperfine Interactions》2003,148(1-4):237-242
Hyperfine Interactions - It is well known that many reinforced concrete structures are at risk of deterioration due to chloride ion contamination of the concrete or atmospheric carbon dioxide... 相似文献
48.
49.
It is well known that the mathematical models provide very important information for the research of human immunodeficiency virus-type 1 and hepatitis C virus (HCV). However, the infection rate of almost all mathematical models is linear. The linearity shows the simple interaction between the T cells and the viral particles. In this paper, we consider the classical mathematical model with saturation response of the infection rate. By stability analysis we obtain sufficient conditions on the parameters for the global stability of the infected steady state and the infection-free steady state. We also obtain the conditions for the existence of an orbitally asymptotically stable periodic solution. Numerical simulations are presented to illustrate the results. 相似文献
50.
P.V.V. Jayaweera P.K.D.D.P. Pitigala M.K.I. Seneviratne A.G.U. Perera K. Tennakone 《Infrared Physics & Technology》2007,50(2-3):270-273
All electronic devices are plagued with 1/f noise originating from many causes. The most important factors contributing to 1/f noise in a semiconductor is believed to be recombination of carriers and their trapping at defects and impurity sites. Adsorption of moisture and electron acceptor molecules enhances the intensity of 1/f noise. Amazingly, some molecular species that strongly chelate to the semiconductor surface, suppress 1/f noise owing to passivation of the recombination sites. Thus in addition to sensitization, the dye adsorbed on the nanocrystallites plays a key role in mitigation of recombinations. For this reason dye-sensitized heterojunctions could also find application as low noise NIR photon detectors. Experiments conducted with oxide semiconductors (TiO2, ZnO, SnO2) indicate that the mode of binding of dyes at specific sites determines the extent to which the recombination and 1/f noise are suppressed. The transport of electrons in a nanocrystalline matrix is diffusive with a diffusion coefficient D depending on the trapping and detrapping processes. Thus passivation of trapping sites by the adsorbed dye is expected to increase the response time which can be expressed as τ L2/D, where L = thickness of the nanocrystalline film. Measurement techniques and construction of a dye-sensitized NIR photon detector will be discussed. 相似文献