Deep trench etching in macroporous silicon

We present a method to create at the same time trenches and ordered macropore arrays during photo-electrochemical etching of n-type silicon. This novel method allows in situ separation of single devices with a submicrometer precision. It also enables new device structures in macroporous silicon in the areas of photonics, sensing and electronics. The limits of this new process are simulated using electrostatic models and are verified experimentally. PACS 82.45.Yz; 81.16.-c     

QCD corrections to the forward-backward asymmetries of c and b quarks at the Z pole

Measurements of the forward-backward production asymmetry of heavy quarks in Z decays provide a precise determination of . The asymmetries are sensitive to QCD effects, in particular hard gluon radiation. In this paper QCD corrections for and are discussed. The interplay between the experimental techniques used to measure the asymmetries and the QCD effects is investigated using simulated events. A procedure to estimate the correction needed for experimental measurements is proposed, and some specific examples are given. Received: 26 February 1998 / Published online: 2 June 1998     

Proximity effect in superconductor/ferromagnet layered system: Influence of superconductivity on magnetic properties of Nb/Fe epitaxial bilayers

Magnetic and superconducting properties of Fe/Nb epitaxial bilayers have been studied. Single crystal Fe/Nb (110) bilayers with a Nb thicknessd _Nb in the range from 250 to 650 Å and with a Fe thicknessd _Fe in the range from 7 to 27 Å were prepared using molecular beam epitaxy techniques. Magnetization measurements showed the existence of a magnetically “dead” Fe-interface layer with a thicknessd _NM varying strongly with minor modifications of the growth conditions. For bilayers with a small magnetic layer thicknessd _M and a smalld _NM the FMR measurements revealed an anomalous decrease of the effective magnetization 4πM _eff of the ferromagnetic Fe layer below the superconducting transition temperatureT _c. The absolute change of 4πM _eff belowT _c depends strongly on the actual values ofd _M andd _NM: upon decreasing bothd _M andd _NM the effect increases considerably. As a possible mechanism for the anomalous temperature dependence of 4πM _eff belowT _c we discuss a spatial modulation of ferromagnetic order due to a modification of the RKKY inter-action in the superconducting state.     

AES Depth profiling of semiconducting multilayer structures using an ion beam bevelling technique

An ion beam technique has been developed which allows the preparation of bevels from semiconducting heteroepitaxial structures with smooth surfaces and very flat angles in the order of 0.1°. The bevels are used for AES depth profiling of heterostructures by the line scan technique. Measured and calculated line scans from (Al,Ga)As/GaAs and SiGe/Si test structures are compared to estimate the contributions of the electron escape depth and the ion beam mixing to the depth resolution. Received: 21 August 1996 / Revised: 14 January 1997 / Accepted: 18 January 1997