Non-compact generalized variational inequalities for quasi-monotone and hemi-continuous operators with applications

Some results are obtained for non-compact cases in topological vector spaces for the existence problem of solutions for some set-valued variational inequalities with quasi-monotone and lower hemi-continuous operators, and with quasi-semi-monotone and upper hemi-continuous operators. Some applications are given in non-reflexive Banach spaces for these existence problems of solutions and for perturbation problems for these set-valued variational inequalities with quasi-monotone and quasi-semi-monotone operators. This revised version was published online in June 2006 with corrections to the Cover Date.     

A comparison of a theoretical model for quasi-statically and dynamically induced environmental vibration from trains with measurements

This paper presents comparisons between a theoretical ground vibration model and measured data at three sites. The model, which is briefly outlined here, encompasses both the quasi-static and dynamic mechanisms of excitation. The vertical dynamics of a number of vehicles travelling at a constant speed on an infinite track are coupled to a semi-analytical model for a three-dimensional layered ground. This model is also used to demonstrate the roles of the two components of vibration at different frequencies and for train speeds below and above the lowest ground wave speed. It is found that, in most practical cases, the dynamic component gives rise to the higher level of vibration.     

Sugar conjugates of fulvestrant (ICI 182,780): efficient general procedures for glycosylation of the fulvestrant core

We have prepared glucose and cellobiose conjugates at the phenolic 3- and hydroxylic 17-positions of the pure anti-estrogenic compound fulvestrant (ICI 182,780), which has recently been approved in the USA for the treatment of advanced postmenopausal breast cancer. Glycosylation at the 17-position was achieved most effectively using pivaloyl protection of the sugar imidates employed, which we found suppressed the competing transacylation reaction and led to improved yields of the product glycosides.     

Nonlinear dynamics of charged particles interacting with combined ac-dc electromagnetic fields

A nonlinear Lorenz model describing interactions between charged particles and combined ac-dc electromagnetic fields is studied for various combinations of frequencies, field strengths and relative angle (θ) between the ac and dc magnetic fields. Strong directional effects on the magnitude and location of resonant particle motion are observed when θ is varied and the regular resonance windows in the aligned field (θ = 0) and linear version of the model studied previously by Durney etaal., break up to form irregular and less well pronounced regions of large and small particle displacements when nonlinearities are taken into account. The length of time takne to achieve resonant behaviour also becomes larger and more variable when nonlinearities are present. The possible relevance of these effects to interactions between electromagnetic fields and biological media is briefly discussed.     

Quantitative measurements of Ge surface segregation during SiGe alloy growth

Ge segregation during the growth of Si_{1 − x}Ge_x alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation.