HL-2A装置上边界间歇性事件与湍流粒子输运的统计学研究

通过对粒子概率分布函数的计算,发现在高等离子体密度下边界间歇性事件的爆发频率有所增加。通过条件平均的手段,正负间歇性事件得以区分,并发现了二者在空间上的不同特征。不同密度梯度下的湍流粒子输运计算表明,间歇性事件与湍流粒子输运之间存在密切联系,间歇性事件的存在能够大大增加湍流粒子输运的大小。在高等离子体密度时,间歇性事件的强度有所增加,而与之相应地,湍流粒子输运的大小也有所增强。     

羟基对界面水分子的扰动与其对非离子型氢氟烃杂化表面活性剂聚集行为的改变

本文合成并比较了具有和不具有羟基的两种非离子型氢氟烃杂化表面活性剂,它们均表现出良好的热稳定性和优异的表面活性. 实验观察到羟基对改变其溶液的表面张力和所形成胶束的形态具有较大的影响. 该作用可归因于烷烃基团从空气/水表面上方到其下方的重排以及由羟基诱导的界面水结构的扰动. 本工作提供了一种通过修改界面处的取向结构来弱化碳氢链和碳氟链之间的不混溶性,从而利于设计具有不同界面性质表面活性剂的策略.     

一种超导重力仪磁悬浮力的等效计算

为实现超导重力仪磁悬浮力的精确计算,以GWR型超导重力仪为模型基础,采用有限元的思想,将超导球表面电流理想化为多个等高共轴电流环,计算出各个电流环与超导线圈的作用力,求和得到线圈与超导球间的磁悬浮力。利用MATLAB完成计算程序实现,通过改变下线圈电流和上、下线圈电流比,获得满足一定条件的磁悬浮力及其梯度。选取合适的模型参数,计算出线圈对质量为m=4.069 g超导球的磁悬浮力大小为:Ftotal=3.988×10^-2N,磁悬浮力梯度为:-9.699×10^-3N/m,此时悬浮力梯度合适,满足系统稳定性和灵敏度的要求。     

Frozen strain moiré used in the analysis of impact loading

This paper presents a solution to the problem of the displacement fields and strains in a semi-infinite plate with two half-circular holes during the propagation of a stress wave. The solution was realized experimentally by means of the method of the frozen strain moiré using a double-pulse ruby laser. The load of impact was applied by a pendulum hammer. Two suitable external-trigger mechanisms were used to fire the ruby laser at predetermined intervals. The moiré fringe patterns of the U and V displacement fields were recorded on a holographic film adhered to the specimen at different time delays after impact.     

OH+C2H3F的反应机理及产物支化比反应的理论研究

本文对HOC₂H₃F可能解离通道的势能面进行从头算CCSD(T)/CBS//B3LYP/6-311G(d,p)计算,同时对速率常数进行Rice-Ramsperger-Kassel-Marcus计算. 生成主要产物CH₂CHO+HF最有利的反应途径是OHC₂H₃F→i2→TS14→i6→TS9→i3→TS3→CH₂CHO+HF,其中速率决定步骤是HF通过TS11从CO桥接位置解离,能量比反应物高3.8 kcal/mol. 借助中间态TS14,F原子从C_α迁移到C_β位置生成CH₂O+CH₂F,然后通过中间态TS16,H从O迁移到C_α位置;通过中间态TS5,C-C键断裂生成产物,其能量比反应物低1.8 kcal/mol,比TS11低4.0 kcal/mol.     

kHz激光器在武汉卫星观测站的测距实验

高重复频率激光器是kHz卫星激光测距系统的重要组成部分,提高激光发射频率可以有效地获得更多的观测数据,这是当今卫星激光测距领域的发展方向.针对武汉卫星观测站进行的kHz激光测距实验,介绍了kHz激光器的工作过程和原理,分析了影响高重复频率回波探测的因素.实验结果表明:对实验过程中所观测到的中低轨卫星,观测数据量提高了1...     

The Calibrating Theory in the Network Parameters Measurement of Microwave and MMW Devices

The paper introduces a special system calibration technology in s-parameters measurement of microwave and millimeter wave devices. The 8-term errors module is built by analyzing the signals flowing in the measurement system. Then the calibration technology using non-standard kits is designed on the base. Finally, the experiment using the calibration technology is introduced.     

Advances in theoretical and experimental XAFS studies of thermodynamic properties,anharmonic effects and structural determination of fcc crystals

Thermodynamic properties, anharmonic effects and structural determination of fcc crystals have been studied based on the theoretical and experimental Debye–Waller factors presented in terms of cumulant expansion up to the third order, thermal expansion coefficient, X-ray absorption fine structure (XAFS) spectra and their Fourier transform magnitudes. The advances in these studies are performed by the further development of the anharmonic correlated Einstein model primary only for approximating three first XAFS cumulants into the method using that all the considered theoretical and experimental XAFS parameters have been provided based on only the calculated and measured second cumulants. The obtained cumulants describe the anharmonic effects in XAFS contributing to the accurate structural determination. Numerical results for Cu are found to be in good agreement with the experimental values extracted by using the present advanced method and with those obtained by the other measurements.     

High-Power Diode-End-Pumped Slab Composite Tm:YLF Compact Laser

We design a continuous-wave Tm:YLF laser with a composite slab crystal end-pumped by two fiber-coupled laser diodes at room temperature. We achieve a maximum continuous wave output power of 105 W for the bonded slab Tm:YLF laser; the corresponding slope efficiency is 47.7% and the optical-to-optical conversion efficiency is 42.0% with respect to the incident pump power. The laser operated at 1,907.5 nm with a beam quality factor of M² ～3.2 at the highest output power.