Simulation and fabrication of carbon nanotubes field emission pressure sensors

A novel field emission pressure sensor has been achieved utilizing carbon nanotubes (CNTs) as the electron source. The sensor consists of the anode sensing film fabricated by wet etching process and multi-wall carbon nanotubes (MWNTs) cathode in the micro-vacuum chamber. MWNTs on the silicon substrate were grown by thermal CVD. The prototype pressure sensor has a measured sensitivity of about 0.17-0.77 nA/Pa (101-550 KPa). The work shows the potential use of CNTs-based field-emitter in microsensors, such as accelerometers and tactile sensors.     

The Level-split of the Two-level Entangled Atom in an Optical Field

The behavior of a two-level entangled atom in an optical field with circular polarization is studied in this paper. The interaction of an optical field and one of the entangled atoms is analyzed in detail. A general solution of the SchrAo¨Gdinger equation about the motion of the entangled atom is obtained. The properties of the action are dependent on the initial state of the atom. By detecting the entangled atom out of the field, we can obtain the state of the other atom moving in the field. It is shown that the state of the atom out of the field will influence the energies of the split-levels of the atom in the field.     

Convergence Rates in the Law of Large Numbers under Sublinear Expectations

In this note, we study convergence rates in the law of large numbers for independent and identically distributed random variables under sublinear expectations. We obtain a strong L^p-convergence version and a strongly quasi sure convergence version of the law of large numbers.     

1.5μm波段基于级联二阶非线性的铌酸锂光波导全光波长变换的理论分析

研究了基于级联二阶非线性的铌酸锂波导全光波长变换器的特性.首先从耦合模方程出发,比较了数值分析结果与小信号近似分析的结果.其次在数值分析基础上,分析了铌酸锂晶体的温度变化导致相应基频光波波长与极化反转光栅周期的变化关系.最后分析了在不同相互作用长度下,转换的光波功率与有效基频光波波长带宽、温度调谐带宽、极化反转光栅周期带宽等关系,以对全光波长变换器件进行优化设计 关键词： 级联二阶非线性 波长变换 准位相匹配 铌酸锂光波导     

Frequency Selectivity Behaviour in the Auditory Midbrain： Implications of Model Study

By numerical simulations on frequency dependence of the spiking threshold, i.e. on the critical amplitude of periodic stimulus, for a neuron to fire, we find that bushy cells in the cochlear nuclear exhibit frequency selec- tivity behaviour. However, the selective frequency band of a bushy cell is far away from that of the preferred spectral range in human and mammal auditory perception. The mechanism underlying this neural activity is also discussed. Further studies show that the ion channel densities have little impact on the selective frequency band of bushy cells. These findings suggest that the neuronal behaviour of frequency selectivity in bushy cells at both the single cell and population levels may be not functionally relevant to frequency discrimination. Our results may reveal a neural hint to the reconsideration on the busily cell functional role in auditory information processing of sound frequency.     

The Tolerance of All-Optical Switching Based on Cascaded Second-Order Nonlinearity in PPLN APE Waveguide

Based on solving the couple mode equation numerically, the characterization of the signal power on the gate power was analyzed. And the relationship of the tolerance of the grating period and the bulk temperature on the interaction length was analyzed.     

FI代数的滤子

研究FI代数的滤子理论，建立F滤子、P滤子、Q滤子、C滤子之间的联系．     

Extremal Convex Planar Sets

Each convex planar set K has a perimeter C, a minimum width E, an area A, and a diameter D. The set of points (E,C, A^1/2, D) corresponding to all such sets is shown to occupy a cone in the non-negative orthant of R⁴with its vertex at the origin. Its three-dimensional cross section S in the plane D = 1 is investigated. S lies in a rectangular parallelepiped in R³. Results of Lebesgue, Kubota, Fukasawa, Sholander, and Hemmi are used to determine some of the boundary surfaces of S, and new results are given for the other boundary surfaces. From knowledge of S, all inequalities among E, C ,A, and D can be found.     

稀土配合物Eu(asprin)_3phen发光特性的研究

将稀土配合物Eu(asprin)_3phen掺杂到导电聚合物PVK中,制成结构分别为ITO/PVK:RE配合物/LiF/AI(1),ITO/PVK:RE配合物/PBD/LiF/AI(2)的电致发光(EL)器件。发现二者的电致发光谱存在着较大的差别:在器件(1)中,来自Eu~(3 )的位于594nm(~5D_0→~7F_1)和614nm(~5D_0→~7F_2)处的发光强度大致相当,而在器件(2)中,EL主要来自Eu~(3 )位于614nm的发光,594nm处的发光很弱,与薄膜状态下的光致发光谱(PL)一致。并针对此现象进行了初步讨论。