Investigation of the X-ray radiation produced by a diffusive discharge in the rod-plane geometry under atmospheric pressure

Spatial parameters of the X-ray radiation produced by a high-voltage nanosecond discharge evolving in air under atmospheric pressure in the rod (cathode)-plane electrode system with a 10-cm electrode spacing are studied experimentally. A ∼170-ns voltage pulse with an amplitude of ∼200 kV and 10-ns rise time is applied to the cathode. The photoelectronic method is used to study, under the same conditions, the integrated (over the gap) characteristics of the radiation, in particular, the duration of its generation. It is found that, when the size of the X-ray source is not smaller than that of the discharge region of diffusive luminescence, radiation from the cathode region of the gap is primarily observed (i.e., from the region where the electric field distribution is sharply inhomogeneous). The X-ray generation is usually observed after the bridging of the discharge gap, the X-ray pulse having a rise time of ∼3 ns, a duration of ∼10 ns, and an effective radiation energy of ∼6 keV.     

Numerical simulation of the translational nonequilibrium zone behind a shock-wave front

The translational nonequilibrium zone in a shock wave is considered for a gas consisting of light particles and a small addition of heavy particles. The gas is taken to be two-dimensional, and long-range forces are assumed to be absent. In the framework of this approximation, a program for molecular dynamics simulation of the gas is developed. It is applied to calculate a particle distribution function in the shock wave, to analyze the time evolution of the distribution function, and to study its dependence on the gas composition.     

Effect of γ radiation from <Superscript>60</Superscript>Co on the formation of metal contacts to GaAs (Al<Subscript>x</Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As) structures

The properties of nonrectifying AuGe/GaAs (Al_0.4Ga_0.6As) contacts exposed to heat treatment, ⁶⁰Co γ radiation, and γ radiation combined with the application of an electrical bias are studied. A correlation between the type of interfacial interaction in the contacts and their resistance is found. Results obtained are explained in terms of a diffusion model with a movable boundary of the metal layer.     

The total acoustic impedance of a prolate spheroid performing transverse oscillatory movements

Using the theory of spheroidal wave functions, the total acoustic impedance is determined for a prolate spheroid performing transverse translational and rotational oscillatory movements. Expressions for the radiation resistance, the added mass, and the added moment of inertia are derived. It is shown that, in the lowfrequency approximation, this mass and moment of inertia reach limiting values identical to hydrodynamic ones. The components of the total acoustic impedance are calculated for spheroids of different relative thicknesses at an arbitrary frequency.     

DX<Superscript>−</Superscript> center formation in planar-doped GaAs:Si in strong electric fields

The kinetics of current decay and partial restoration in planar doped GaAs:Si due to the formation of DX^? centers in strong electric fields has been experimentally studied. The existence of thresholds with respect to the field strength and donor concentration is explained. A model of the DX^? center formation is proposed, which is based on the notions about variation of the depth and width of a potential well created by planar doping, caused by the redistribution of hot electrons between quantum confinement subbands. As a result, the energy level of DX^? centers, which is situated above the potential well depth in the absence of strong field, decreases and falls within the potential well. This makes possible the DX^? center formation, provided that hot electrons, occupying the resonance electron levels in the conduction band, simultaneously excite local vibrational modes.     

Simulation of mass transfer in systems with isotropic pair correlation of particles

Results of a numerical analysis of mass transfer in systems of macroscopic particles with various isotropic interaction potentials are presented. Parameters that determine transport properties of nonideal dissipative systems are obtained for a broad class of model potentials. An approximate expression for the diffusivity of interacting particles is proposed. The relationship between diffusivity and viscosity is analyzed for strongly nonideal systems.     

Synthesis of ordered Ge-Si heterostructures containing ultrasmall germanium nanoclusters

Different techniques for the fabrication of structures containing ensembles of ultrasmall germanium nanoclusters distributed with a high density over the substrate surface are discussed. How to control the morphology and ordering of these ensembles is also discussed.