Characterization of Metallo Bis(terpyridine) Diblock Polymers by Nonaqueous Capillary Zone Electrophoresis

A method of nonaqueous capillary zone electrophoresis (CZE) has been developed to characterize block (co)polymers of poly(ethylene oxide) and poly(styrene) containing metallo bis(terpyridine) complexes as bridging units. Specific CZE separation conditions had to be applied, with barium perchlorate dissolved in N-methylformamide (NMF) as background electrolyte and OV-1701-OH deactivated capillaries. For detection UV absorption was measured at a wavelength of 316 nm. Metallo diblock polymers with molecular weights up to 30,000 Da could be analyzed by the proposed nonaqueous CZE method. Experiments performed with polymeric compounds containing Fe, Ni or Ru as central metal ions showed that their electrophoretic mobilities were independent of the type of metal ion. Therefore, the data on the size of the polymeric compounds could be obtained using just one set of calibration standards. Polydispersities of the samples calculated from the experimental results were in correlation with the polydispersities of the polymers used in the synthesis of the metallo diblock polymers. Several polymeric samples contained metallo mono(terpyridine) complexes as impurities. These by-products could be separated from the main product. With symmetrical diblock polymers only one by-product was detected, while with an asymmetric diblock polymer two types of mono-complexes were found. The amount of the mono-complexes present as impurities was dependent on the type of central metal ion (Ni > Fe >> Ru).     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

On the retrograde condensation of one or two liquids

This contribution discusses the phenomena of retrograde condensation of one or two liquids. It w1 be shown that both phenomena can be well understood. Also the relation of retrograde condensation of one liquid phase with the condensation behavior of natural gas will be discussed. Similarly that of two liquid phases with multiple phase behavior occurring in low temperature reservoir fluids will be pointed out.     

Quantum optical ramsey fringes and complementarity

An interferometer in which an atom traverses two identical micromaser cavities in succession is proposed. Depending on the preparation of the cavity fields, the probability for finding the atom in a definite final state displays Ramsey fringes or not. If the initial cavity fields are such that the state of the atom between the cavities can be determined, then the Ramsey fringes disappear, as is required by the principle of complementarity.     

Some global results for eigenvalue problems governed by a variational inequality

In this paper, we use the Leray-Schauder degree theory to obtain some information about the structure of the solution set of a large class of eigenvalue problems governed by a variational inequality. Applications are given to the unilateral postbuckling of a thin elastic plate.     

On nearly parallel G2-structures

A nearly parallel G₂-structure on a seven-dimensional Riemannian manifold is equivalent to a spin structure with a Killing spinor. We prove general results about the automorphism group of such structures and we construct new examples. We classify all nearly parallel G₂-manifolds with large symmetry group and in particular all homogeneous nearly parallel G₂-structures.