Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires

We examine individual Si nanowires grown by the vapor-liquid-solid mechanism, using real-time in situ ultra high vacuum transmission electron microscopy. By directly observing Au-catalyzed growth of Si wires from disilane, we show that the growth rate is independent of wire diameter, contrary to the expected behavior. Our measurements show that the unique rate-limiting step here is the irreversible, kinetically limited, dissociative adsorption of disilane directly on the catalyst surface. We also identify a novel dependence of growth rate on wire taper.     

Self-assembled superlattice by spinodal decomposition during growth

We examine the dynamics of alloy growth by vapor deposition and bulk diffusion, predicting a new type of self-organized growth. When material is deposited at a composition unstable against spinodal decomposition, we find three distinct regimes depending on growth rate. Intermediate growth rates lead to spontaneous formation of a superlattice with layers parallel to the surface. Slow growth leads to more complex three-dimensional decomposition. For fast growth, the alloy composition remains uniform near the surface, with a composition wave propagating up from the interface.     

Kinetic evolution and equilibrium morphology of strained islands

Self-assembled SiGe islands grown on Si(001) leave behind characteristic "footprints" that reveal that small islands shrink, losing material to nearby larger islands. The critical size, dividing shrinking from growing islands, corresponds to the pyramid-to-dome shape transition, consistent with "anomalous coarsening" While shrinking, {105}-faceted pyramids transform into truncated pyramids and ultimately into unfaceted mounds. The similarity to behavior during island growth indicates that island shape and facet formation are thermodynamically determined.     

Electron-phonon interaction and transport in semiconducting carbon nanotubes

We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight-binding model. The mobility is derived using a multiband Boltzmann treatment. At high fields, the dominant scattering is interband scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of approximately 70 meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent.