Energochemical technologies: energy and bulk/basic chemicals in a single process

The exoergic reactions, which underlie the production of large-scale basic chemicals for organic industry, can be used for one-pot generation of energy and chemical products. Typical examples include methane oxidative conversion to produce synthesis gas and methane oxidative dimerization to give ethylene and ethane.     

Equilibrium theory of a “soft sphere” fluid with exponential interaction

Odessa Technological Institute for Industrial Refrigeration. Translated from Zhurnal Strukturnoi Khimii, Vol. 29, No. 5, pp. 84–88, September–October, 1988.     

Comparison of the data of X-ray microtomography and fluorescence analysis in the study of bone-tissue structure

The possibility of localizing clusters of heavy atoms is substantiated by comparing the data of X-ray microtomography at different wavelengths, scanning electron microscopy, and X-ray fluorescence analysis. The proximal tail vertebrae of Turner??s thick-toed gecko (Chondrodactylus turneri) have been investigated for the first time by both histological and physical methods, including X-ray microtomography at different wavelengths and elemental analysis. This complex methodology of study made it possible to reveal the regions of accumulation of heavy elements in the aforementioned bones of Turner??s thick-toed gecko.     

Structural Transformation of the Surface of an Aluminum Alloy after Hydroabrasive Action

The results of investigating an Al–Mg alloy (5.8–6.8 wt % Mg) subjected to hydroabrasive action are presented. It is revealed that the cut surface is contaminated with fragments of particles of the abrasive. The cut-surface relief is studied with the help of scanning electron microscopy. The cut-surface microhardness and the cold-hardened layer depth are determined. The structural transformation near the surface is investigated via X-ray diffraction analysis and transmission electron microscopy. The structural state of the alloy near the surface is demonstrated to be extremely inhomogeneous. Plastic deformation leads to the formation of an ultrafine-grained structure with a heightened level of stresses.     

Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> and Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> Topological Insulators

The effect of an ultrathin Pb film deposited on the surface of Bi₂Se₃ and Sb₂Te₃ compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.     

Effect of Ionosphere on the Excitation of Electromagnetic Field at Extremely Low and Lower Frequencies in the Near-Field Zone

Excitation of electromagnetic fields at extremely low and lower frequencies in the near-field zone of the Earth–ionosphere waveguide is considered. Variations in the field amplitude in the lower part of the extremely low frequency (ELF) range and lower frequencies are experimentally determined under different geophysical conditions in the absence of variations in the ultralow frequency (ULF) range. The effects related to such variations are analyzed with the aid of theoretical calculations that show significant effect of ionosphere in the near-field zone at relatively low terrestrial conduction.     

New Ga-enriched reconstructions on the GaAs(001) surface

To prepare structure-ordered GaAs(001) surfaces at low temperatures, GaAs(001) surfaces coated with native oxides were exposed in an atomic hydrogen flow in the temperature range 280–450 °C. The new Ga-enriched GaAs(001) surfaces with the (4 × 4) and (2 × 4)/c(2 × 8) reconstructions were prepared and studied by the methods of X-ray photoelectron spectroscopy, low-energy electron diffraction, and high-resolution characteristic electron energy loss spectroscopy. For the GaAs(001)-(2 × 4) surface, the structure of the Ga-stabilized surface has been proposed and ab initio computed within the (2 × 4) Ga-trimer unit cell model.