Nonvolatile photorefractive holographic recording in Sc:Ce:Cu:LiNbO3

In this paper experimental studies of nonvolatile photorefractive holographic recording in Ce:Cu:LiNbO₃ crystals doped with Sc(0,1,2,3 mol%) were carried out. The Sc:Ce:Cu:LiNbO₃ crystals were grown by the Czochralski method and oxidized in Nb₂O₅ powders. The nonvolatile holographic recording in Sc:Ce:Cu:LiNbO₃ crystals was realized by the two-photon fixed method. We found that the recording time of Sc:Ce:Cu:LiNbO₃ crystal became shorter with the increase of Sc doping concentration, especially doping with Sc(3 mol%), which exceeds the so-called threshold, and there was little loss of nonvolatile diffraction efficiencies between Sc(3 mol%):Ce:Cu:LiNbO₃ and Ce:Cu:LiNbO₃ crystals.     

Interplay between structure and magnetism in Mo12S9I9 nanowires

We investigate the equilibrium geometry and electronic structure of Mo12S9I9 nanowires using ab initio density functional calculations. The skeleton of these unusually stable nanowires consists of rigid, functionalized Mo octahedra, connected by flexible, bistable sulfur bridges. This structural flexibility translates into a capability to stretch up to approximately 20% at almost no energy cost. The nanowires change from conductors to narrow-gap magnetic semiconductors in one of their structural isomers.     

医用生物材料的低温保存研究

生物材料的低温保存一般都要经历降温过程、低温储存过程及复温过程,其中降温过程中对生物细胞的影响最大.每一种生物细胞都有自己合适的降温速率,如能满足其这种降温速率,细胞所受到的低温损伤最小,则生物细胞的复活率最高.文中介绍程序控制变速降温装置的主要结构及几种典型生物体的降温过程.最后,对器官的低温保存进行分析讨论.     

Visible photoluminescence of nanometer-sized SiGe/Si heterostructure fabricated by ion implantation

An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5–7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail.     

刻槽绝缘平行板对电子束的导向效应研究

采用不同材质的刻槽绝缘平行板,包括高纯度石英玻璃、聚四氟乙烯（Teflon）、酚醛树脂（电木）和聚甲醛板（赛钢板）,并在15 pA/mm2 ~14.3 nA/mm2范围内改变入射流强,利用1 500 eV电子束入射上述绝缘平行板,实验研究了上述平行板对电子束的导向行为。实验发现,上述电子束通过上述平行板时存在明显的导向现象,其导向行为与束流流强和绝缘材质无关。据此,可排除绝缘平行板内表面沉积电荷自组织充放电过程中,以绝缘材料的面电阻和体电阻对地泄放的线性形式放电过程。Adopting several grooved parallel plates made by different insulators, such as high-purity fused quartz, Teflon, Bakelite and POM (Polyformaldehyde), and further adjusting the electron beam current in a wide range (tens of pA~tens of nA), the discharging mechanism in the self-organizing charge and discharge processes of electron guiding was investigated and discussed by using 1 500 eV incident electron beam. The present results show that, the electron guiding behaviors are obviously existing when such electron beam is transmitted through the above grooved insulating parallel plates, which are independent on beam current and insulators. Our results suggest that, the possibilities of the accumulated charges on inner-surface of grooved parallel plates linearly discharging through surface and bulk resistances of plates into the ground should be excluded.     

Influence of Bi underlayer on the magnetic properties of Fe<Subscript>x</Subscript>Pt<Subscript>100-x</Subscript> (<Emphasis Type="BoldItalic">x</Emphasis> =<Emphasis Type="Bold">40</Emphasis>∼<Emphasis Type="Bold">58</Emphasis>) films

We have studied the effect of a Bi underlayer on ordering and coercivity H_c of Fe_xPt_100-x thin films (atomic content of Fe x=40∼58). We found that the Bi underlayer enhances H_c remarkably. After annealing at 400 °C for 20 min, a Bi/Fe₄₉Pt₅₁ film can realize an H_c as high as 1.07×10³ kA/m and a ratio of the remnant M_r to the saturated magnetization M_s as high as 0.93. The ordering process of FePt film was promoted by the diffusion of Bi atoms. Moreover, the Bi underlayer broadens the range of x for high H_c from 49∼55 to 43∼55. Interestingly, with Bi underlayer, the high H_c is affected by x to a less extent. PACS 75.50.Ss; 75.50.Vv; 75.60.Ej     

掺磷TiO_2优化TiO_2/MBA/Ag三明治结构的SERS性能

本文以磷酸为磷源,通过溶胶水热法制备磷掺杂TiO_2,利用Lee和Meisel的方法制备银溶胶,以4-巯基苯甲酸(MBA)为探针分子,通过构建TiO_2/MBA/Ag三明治结构,研究磷掺杂二氧化钛对该基底表面增强拉曼(SERS)性能的提升。通过TEM、XRD、XPS、DRS和拉曼光谱图表征二氧化钛的形貌结构、化学组成、光学和拉曼性能,结果表明,制备出的磷掺杂二氧化钛为锐钛矿型纳米颗粒,粒径范围6~12nm,XPS显示磷以P~(5+)替代了Ti~(4+),形成O-P-O键掺入TiO_2的晶格中,当磷的掺杂量在1.77%时,TiO_2/MBA/Ag三明治体系具有最佳的SERS信号,这是因为适量的磷掺杂降低了TiO_2的能带间隙,丰富TiO_2的表面态,这能促进TiO_2向MBA分子的电荷转移。     

高压下ZnS的电子结构和性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，计算研究了闪锌矿结构的ZnS晶体在不同的外界压强下的电子结构. 通过分析发现，随着外界压强的增大，晶格常数和键长在不断缩小，从S原子向Zn原子转移的电荷越来越少，Zn—S键的共价性逐渐增强，Zn原子和S原子的态密度都有不同程度的变化，而且还有向低能量移动的趋势. 当外界压强达到24GPA时，ZnS从直接带隙半导体变成间接带隙半导体，而且随着压强的增大，间接带隙逐渐变小，直接带隙逐渐增大. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论     

脉冲激光偏振方向对氮分子高次谐波的影响——基于含时密度泛函理论的模拟

采用含时密度泛函方法,结合赝势模型和电子交换相关作用的广义梯度近似,模拟了氮分子在超强飞秒激光脉冲作用下的高次谐波产生现象,并研究了激光脉冲偏振方向对氮分子高次谐波的影响.结果表明氮分子的高次谐波谱具有典型原子谐波谱的特征;谐波谱强度随着θ(激光偏振方向与分子轴向夹角)的增大而减小.这与J.Itatanl在Nature上报道的实验结果基本一致.     

一种用于电子纸的电泳液的显示性能研究

用有机颜料汉沙黄(P.Y.3)、苏丹黑和合适的稳定剂为原料配制了一种性能稳定的电泳显示液.分析了此电泳显示液中颜料微粒的带电机理及其影响因素,研究了在改变电压方向时反射光谱与吸收光谱的变化及其原因,光谱分析结果表明体系中存在的各种吸附使显示效果受到局限,反射谱与吸收谱的变化在表征器件的显示特性时呈现出一致性,器件的反射光强和反射率在不同波长上有区域选择性,同时对比度也有区域选择性,这决定了在监测器件的响应时应选择的波长范围以及可利用的光源.兼顾灵敏性和测试信号强度的需求,选用峰值波长为470 nm的蓝光二极管为光源,电泳槽的厚度为0.2 mm,用荧光光谱仪监测相同周期不同幅值脉冲电压作用下颜料微粒在493 nm波长处的反射光强的变化,并由示波器记录并输出反射光强随驱动电压的变化,还结合相关理论讨论了驱动电压对器件的反射光强和对比度的影响.