量子阱数量变化对InGaN/AlGaN LED的影响

采用软件理论分析的方法分析了InGaN/AlGaN量子阱数量变化对发光二极管内量子效率、电子空穴浓度分布、载流子溢出产生的影响。分析结果表明:量子阱的个数不是越多越好,LED的光学性质和量子阱的个数并不成线性关系。量子阱个数太少时,电流溢出现象较明显;而当量子阱个数太多时,极化现象明显,且会造成材料浪费。因此应根据工作电流选择合适的量子阱个数。     

金红石TiO_2中本征缺陷扩散性质的第一性原理计算

基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV.     

Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles

According to the one-dimensional quantum state distribution, carrier scattering, and fixed range hopping model, the structural stability and electron transport properties of N-, P-, and As-doped SiC nanowires(N-SiCNWs, P-SiCNWs, and As-SiCNWs) are simulated by using the first principles calculations. The results show that the lattice structure of NSiCNWs is the most stable in the lattice structures of the above three kinds of doped SiCNWs. At room temperature,for unpassivated SiCNWs, the doping effect of P and As are better than that of N. After passivation, the conductivities of all doped SiCNWs increase by approximately two orders of magnitude. The N-SiCNW has the lowest conductivity. In addition, the N-, P-, As-doped SiCNWs before and after passivation have the same conductivity–temperature characteristics,that is, above room temperature, the conductivity values of the doped SiCNWs all increase with temperature increasing.These results contribute to the electronic application of nanodevices.     

NH4H2PO4和ND4D2PO4晶体微结构的拉曼光谱研究

本文利用偏振拉曼光谱和第一性原理, 对磷酸二氢铵(NH₄H₂PO₄, ADP)和不同氘含量磷酸二氢铵DADP晶体的晶格振动模式进行了研究. 实验测得了不同几何配置、200–4000 cm^-1范围的偏振拉曼光谱, 分析在不同氘含量条件下921 cm^-1和3000 cm^-1附近拉曼峰的变化. 在ADP晶体中, 基于基本结构单元NH₄⁺ 和H₂PO₄^-基团的振动模, 用第一性原理进行了数值模拟, 进一步明确拉曼峰与晶体中原子振动的对应关系; 通过洛伦兹拟合不同氘含量DADP晶体的拉曼光谱中2000–2600 cm^-1处各峰的变化讨论了DADP 晶体的氘化过程, 结果表明氘化顺序是先NH₄⁺ 基团后H₂PO₄^-基团, 研究结果为今后此类材料的生长和性能优化奠定了基础.     

High entanglement generation and high fidelity quantum state transfer in a non-Markovian environment

This paper analyses a system of two independent qubits off-resonantly coupled to a common non-Markovian reservoir at zero temperature. Compared with the results in Markovian reservoirs, we find that much higher values of entanglement can be obtained for an initially factorized state of the two-qubit system. The maximal value of the entanglement increases as the detuning grows. Moreover, the entanglement induced by non-Markovian environments is more robust against the asymmetrical couplings between the two qubits and the reservoir. Based on this system, we also show that quantum state transfer can be implemented for arbitrary input states with high fidelity in the non-Markovian regime rather than the Markovian case in which only some particular input states can be successfully transferred.     

基于微拉曼光谱技术的氧化介孔硅热导率研究

利用基于有效介质理论的介孔硅传热机理,提出一个用于分析氧化介孔硅热导率的理论模型,对影响氧化介孔硅有效热导率的因素进行了理论分析,得出用于计算氧化介孔硅有效热导率的计算公式. 采用双槽电化学腐蚀法制备介孔硅,利用微拉曼光谱技术研究了氧化介孔硅热导率随所制备介孔硅孔隙率的变化规律,比较了经不同温度处理的氧化介孔硅的导热性能差异. 孔隙率为60%,73.4%和78.8%的所制备介孔硅经300℃氧化处理后,其热导率值为8.625W/(m·K),3.846W/(m·K)和1.817W/(m·K);孔隙率为73.4 关键词： 理论模型 氧化介孔硅 微拉曼光谱 有效热导率     

Synchronization of stochastically hybrid coupled neural networks with coupling discrete and distributed time-varying delays

A general model of linearly stochastically coupled identical connected neural networks with hybrid coupling is proposed, which is composed of constant coupling, coupling discrete time-varying delay and coupling distributed timevarying delay. All the coupling terms are subjected to stochastic disturbances described in terms of Brownian motion, which reflects a more realistic dynamical behaviour of coupled systems in practice. Based on a simple adaptive feedback controller and stochastic stability theory, several sufficient criteria are presented to ensure the synchronization of linearly stochastically coupled complex networks with coupling mixed time-varying delays. Finally, numerical simulations illustrated by scale-free complex networks verify the effectiveness of the proposed controllers.     

Elastic behaviour of an edge dislocation near a sharp crack emanating from a semi-elliptical blunt crack

The interaction between an edge dislocation and a crack emanating from a semi-elliptic hole is dealt with. Utilizing the complex variable method, closed form solutions are derived for complex potentials and stress fields. The stress intensity factor at the tip of the crack and the image force acting on the edge dislocation are also calculated. The influence of the morphology of the blunt crack and the position of the edge dislocation on the shielding effect to the crack and the image force is examined in detail. The results indicate that the shielding or anti-shielding effect to the stress intensity factor increases acutely when the dislocation approaches the tip of the crack. The effect of the morphology of the blunt crack on the stress intensity factor of the crack and the image force is very significant.     

有界随机噪声激励下软弹簧Duffing振子的安全盆分叉

研究了软弹簧Duffing振子在有界随机噪声激励下，系统安全盆的侵蚀现象，并提出了随机安全盆分叉的概念. 计算表明，由于随机扰动的影响，系统的随机安全盆分叉点发生了偏移. 关键词： Duffing振子 有界随机噪声 安全盆 分叉     

不同结构六边形斑图演化过程光谱特性

采用发射光谱法,研究了水电极介质阻挡放电中具有相同对称性的3种不同结构的六边形斑图演化过程的光谱特性。实验结果表明,随着外加电压的增加,放电首先形成六边形点阵斑图,然后是空心六边形斑图,最后是蜂窝六边形斑图。利用氩原子696.5 nm(2P_2→1S_5)谱线的展宽、氩原子763.2 nm(2P_6→1S_5)与772.1 nm(2P_2→1S_3)两条谱线强度比法和氮分子第二正带系(C~3Π_u→B~3Π_g)的发射谱线,研究上述3种斑图的电子密度、电子激发温度及分子振动温度。结果发现,随着外加电压的升高,六边形点阵斑图、空心六边形斑图和蜂窝六边形斑图的电子密度逐渐减小,而电子激发温度和分子振动温度逐渐增加。等离子体状态的改变直接影响着斑图的自组织。