基于Si掺杂Sb2Te3薄膜的相变存储器研究

采用磁控三靶(Si，Sb及Te)共溅射法制备了Si掺杂Sb₂Te₃薄膜，作为对比，制备了Ge₂Sb₂Te₅和Sb₂Te₃薄膜，并且采用微加工工艺制备了单元尺寸为10μm×10μm的存储器件原型来研究器件性能.研究表明，Si掺杂提高了Sb₂Te₃薄膜的晶化温度以及薄膜的晶态和非晶态电阻率，使得其非晶态与晶态电阻率之比达到10⁶，提高了器件的电阻开/关比；同Ge₂Sb₂Te₅薄膜相比，16at% Si掺杂Sb₂Te₃薄膜具有较低的熔点和更高的晶态电阻率，这有利于降低器件的RESET电流.研究还表明，采用16at% Si掺杂Sb₂Te₃薄膜作为存储介质的存储器器件原型具有记忆开关特性，可以在脉高3V、脉宽500ns的电脉冲下实现SET操作，在脉高4V、脉宽20ns的电脉冲下实现RESET操作，并能实现反复写/擦，而采用Ge₂Sb₂Te₅薄膜的相同结构的器件不能实现RESET操作. 关键词： 相变存储器 硫系化合物 2Te₃薄膜')" href="#">Si掺杂Sb₂Te₃薄膜 SET/RESET转变     

瓶颈开口角对二维颗粒流的影响

实验研究了平面传送带上颗粒流的特性，主要包括传送带出口处开口宽度以及瓶颈开口角度对颗粒流的影响.实验结果发现，改变瓶颈开口角度θ，当θ大于15°时，颗粒流量Q随着cosθ呈线性变化.同时，颗粒流量Q与传送带速度v以及开口大小R也密切相关，而在θ小于15°时，颗粒流量Q基本不随开口角度变化.     

3ω法加热/测温膜中温度波解析及其在微/纳米薄膜导热系数测量中的应用

给出了3ω法测试系统中描述薄膜表面加热/测温膜中温度波动的级数形式解，并将复数温度波动的实部和虚部分开表示.利用该解分析了交流加热频率、加热膜宽度和材料热物性的组合参数对加热膜温度波动幅度的影响.并根据此解对测量原理的数学模型进行了修正，建立了相应的3ω测试系统，首先测定了厚度为500 nm SiO₂薄膜的导热系数，验证了实验系统的合理性.加大了测试频率，利用级数模型在高频段直接得到SiO₂薄膜的导热系数，结合低频段的数据同时确定了Si基体的导热系数.利用级数解分析测试了激光晶体Nd:YAG〈111〉面上多层ZrO₂/SiO₂增透膜的导热系数，测试的ZrO₂薄膜的导热系数比体材料小.进行了不确定度分析.结果表明，提出的分析方法可以有效研究微器件表面薄膜结构的导热性能. 关键词： ω法')" href="#">3ω法 微/纳米薄膜 导热系数 微尺度加热膜     

双随机相位编码光学加密系统的唯密文攻击

针对双随机相位编码光学加密系统的安全性分析表明，该系统属于线性对称分组密码系统，其线性性质为安全性留下极大隐患.在唯密文攻击下，仅根据密文估计出物面波函数的“支撑”(support)，然后利用迭代相位恢复算法获得物面波函数(其振幅是明文信息)，再根据物面波函数与频域密文的关系可推导出频谱平面的解密密钥.由于估计出来的物面波函数的“支撑”相对于真实的物面波函数的“支撑”有一定的平移，使得恢复的物面波函数与真实的物面波函数之间无论在振幅上还是相位上都存在平移，导致用推导出来的解密密钥去解密其他密文时所获得的明文与原始明文之间存在明显平移.然而，可依照这一先验信息，将估计出来的物面波函数的“支撑”在物面内遍历，从而找到逼近真实解密密钥的解.利用此解密密钥去解密其他密文时获得更好的解密效果. 关键词： 光学信息安全 双随机相位编码 唯密文攻击 函数支撑     

Yb∶Y_3Al_5O_(12)晶体晶格振动光谱的研究

采用提拉法生长Y3Al5O12(YAG)晶体和Yb3 掺杂原子数分数分别为5%,10%,15%,20%,25%,50%和100%的Yb∶Y3Al5O12(Yb∶YAG)晶体。系统表征和分析了Yb3 掺杂浓度对拉曼光谱的影响。随着Yb3 掺杂浓度的增加,晶体的振动模式没有明显的变化,晶体结构没有改变;在370 cm-1和785 cm-1附近,振动吸收峰的半峰全宽逐渐增大。分析得出,Yb3 掺杂浓度对晶体的晶格、对称性、荧光寿命均有影响,从而可能影响到晶体的光谱和激光性能。     

掺杂偶氮化合物的PMMA光折变聚合物的拉曼光谱分析

光折变聚合物具有良好的光折变效应,采用以惰性聚合物PMMA为基体,掺杂偶氮化合物染料的光折变聚合物具有较好的光学非线性和稳定性。文章主要介绍使用激光拉曼光谱仪对合成聚合物的各单体和聚合物薄膜进行拉曼光谱扫描,对比分析各个单体成分的特征谱峰与聚合物薄膜特征谱峰,肯定了实验中得到的光折变聚合物薄膜与理论上要求得到的一致性。     

The aberration theory of a combined electron focusing–deflection system with a rotating deflection field following the rotation of the electrons

A new type of combined magnetic focusing–electrostatic deflection systems whose orientation of deflection field is rotated synchronously with the beam electrons is proposed. This rotation deflection field can be formed by twistification of tube wall electrode (TWE) deflectors. Formulae are derived for the first-order optical properties, third-order geometrical aberrations and first-order chromatic aberrations of this system. A program was written in FORTRAN for numerical computation. An example is given; the computation results show that compared to the conventional systems, the proposed new system has lower deflection aberration coefficients.     

Controlled-synthesis,characterization, and magnetic properties of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> nanostructures

Fe₃O₄ nanostructures with different morphologies, including uniform nanoparticles, nanorods and nanowire bundles, have been successfully synthesized via a facile hydrothermal route. Based on the observation of TEM images, the growth mechanism of one-dimensional Fe₃O₄ nanostructures is in accordance with Ostwald ripening process. From the hysteresis loops of as-prepared Fe₃O₄ products, we found that the morphology has great influence on the magnetic properties. The uniform Fe₃O₄ nanoparticles have higher saturation magnetization and lower coercivity than that of Fe₃O₄ nanorods and nanowires bundles. These phenomena attribute to the high shape anisotropy of nanorods and nanowire bundles, which prevent them from magnetizing in directions other than along their easy magnetic axes. PACS 81.07.-b; 75.50.Bb; 75.30.Gw; 81.10.Dn; 81.16.Be     

Calculation of the Effect on the Reflection of the Plane Electromagnetic Wave for Non-Magnetized Plasma with Different Electron Density Distributions

In this paper, shift operator finite-difference time-domain (SO-FDTD) method is applied for the calculation of the dispersive medium. The high efficiency and accuracy of this method is verified by calculating the reflection of the plane electromagnetic wave impinging on a non-magnetized plasma slab with different electron density distributions. The results show that the average electron density only determines overall trends of the reflection, and different distributions affect the oscillating process of the reflection. If the average electron density maintains the same, the distribution of electron density with homogenous or inhomogeneous alternation will sharply take effects on the reflection. And magnitude of alternation of electron density affects the incident frequency directly when the reflection tends to uniform.     

The n-type Gd-doped HfO<Subscript>2</Subscript> to silicon heterojunction diode

Gd-doped HfO₂ films were deposited on p-type silicon substrates in a reducing atmosphere. Photoemission measurements indicate the n-type character of Gd-doped HfO₂ due to overcompensation with oxygen vacancies. The Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum is identified using both resonant photoemission and first-principles calculations of the f hole. The rectifying (diode-like) properties of Gd-doped HfO₂ to silicon heterojunctions are demonstrated. PACS 79.60.-i; 68.55.Ln; 29.40.Wk; 81.05.Je