Photochemical vapor deposition of amorphous silicon through 185 nm excitation of monosilane

Photochemical vapor deposition of a-Si films at a high rate using SiH₄ and a 185 nm low pressure mercury lamp is described. A maximum rate of 1 nm/sec was attained using the 185 nm lamp. This rate was about ten times higher than that using a 254 nm lamp. Assuming that there is no interaction between the effects of the two wavelengths, the deposition rate per light output power of 184.9 nm light is 160 times larger than that for 253.7 nm light. The absorption cross-section of the 184.9 nm light is ten times greater than that for the 253.7 nm light.     

Charge-order pattern of the low-temperature phase from a monoclinic single domain of NaV2O5 uniquely determined by resonant x-ray scattering

The present resonant x-ray scattering has been performed on a monoclinically split single domain of NaV(2)O(5). The observation of a critically enhanced contrast between V(4+) and V(5+) ions has led us to the unequivocal conclusion of the charge-order pattern of the low-temperature phase of NaV(2)O(5) below T(c) = 35 K. In spite of the possible four types of configuration of the zigzag-type charge-order patterns in the ab plane (A,A',B and B'), the stacking sequence along the c axis is determined as the AAA'A' type by comparison with model calculations.     

Growth process and structure of Fe/Si(1 1 1) ultrathin film: Transition from single-domain Fe(1 1 1)/Si(1 1 1) to β-FeSi2

The growth processes and structures of Fe/Si(1 1 1) ultrathin films grown by solid-phase reactive epitaxy were investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS). It has been revealed that the Fe(1 1 1) thin films with a bcc-type structure were epitaxially grown on a Si(1 1 1) crystal, even at room temperature, and formed a single-domain structure: Fe(1 1 1)∥Si(1 1 1). After annealing at above 600 °C, the Fe(1 1 1) films were transformed into β-FeSi₂ via the collapse of the bcc-type structure to an amorphous or polycrystalline structure. On the basis of the thickness dependences of the growth processes, this phenomenon was discussed in terms of the diffusion of Si into Fe thin films.     

The Elliptic Algebra and the Drinfeld Realization of the Elliptic Quantum Group

By using the elliptic analogue of the Drinfeld currents in the elliptic algebra , we construct a L-operator, which satisfies the RLL-relations characterizing the face type elliptic quantum group . For this purpose, we introduce a set of new currents in . As in the N=2 case, we find a structure of as a certain tensor product of and a Heisenberg algebra. In the level-one representation, we give a free field realization of the currents in . Using the coalgebra structure of and the above tensor structure, we derive a free field realization of the -analogue of -intertwining operators. The resultant operators coincide with those of the vertex operators in the -type face model.     

A novel action of terpendole E on the motor activity of mitotic Kinesin Eg5

To reveal the mechanism of mitosis, the development of M phase-specific inhibitors is an important strategy. We have been screening microbial products to find specific M phase inhibitors that do not directly target tubulins, and rediscovered terpendole E (TerE) as a novel Eg5 inhibitor. TerE did not affect microtubule integrity in interphase, but induced formation of a monoastral spindle in M phase. TerE inhibited both motor and microtubule-stimulated ATPase activities of human Eg5, but did not affect conventional kinesin from either Drosophila or bovine brain. Although terpendoles have been reported as inhibitors of acyl-CoA:cholesterol O-acyltransferase (ACAT), the Eg5 inhibitory activity of TerE was independent of ACAT inhibition. Taken together, we demonstrate that TerE is a novel Eg5 inhibitor isolated from a fungal strain.     

Spatiotemporal symmetry in rings of coupled biological oscillators of Physarum plasmodial slime mold

Spatiotemporal patterns in rings of coupled biological oscillators of the plasmodial slime mold, Physarum polycephalum, were investigated by comparing with results analyzed by the symmetric Hopf bifurcation theory based on group theory. In three-, four-, and five-oscillator systems, all types of oscillation modes predicted by the theory were observed including a novel oscillation mode, a half period oscillation, which has not been reported anywhere in practical systems. Our results support the effectiveness of the symmetric Hopf bifurcation theory in practical systems.     

Development of a high-power deep-ultraviolet continuous-wave coherent light source for laser cooling of silicon atoms

We developed a deep-UV single-mode coherent light source through two-stage highly efficient frequency conversions by use of external cavities. In the first stage, second-harmonic power of 500 mW was obtained by frequency doubling of a 746-nm Ti:sapphire laser with a conversion efficiency of 40%. In the second stage, 50-mW power at ~252nm was obtained by doubly resonant sum-frequency mixing of 373-nm light from the first-stage conversion and 780-nm light from a diode laser. The output performance of this deep-UV light source is sufficient for laser cooling of neutral silicon atoms.