有效需求与通货紧缩的统计关系研究

本文通过对有效需求一物价指数统计模型的研究 ,估计出了有效需求方程 ,并且通过对模型的估计结果分析得出如下结论 :物价指数对有效需求的影响是显著的 :通货紧缩、物价指数持续走低是有效需求不足的主要原因 ,治理通货紧缩应该是解决我国有效需求不足的主要任务。     

回旋管输出窗热性质的研究

一、引 言 输出窗是回旋管的能量输出端口,它的特性直接影响到回旋管的性能和寿命。输出窗的设计包括电特性和热特性的研究。当输出功率增加时,热特性的研究变得非常重要以便寻求合理有效的冷却措施。 输出窗由波导和介质片(块)两部分组成。回旋管的输出波导是圆波导,介质一般做成     

Special features of the radiative capture of ultracold neutrons by thin and thick layers of matter

The radiative capture of ultracold neutrons traversing thin and thick homogeneous layers of matter is analyzed. The applicability range of the formulas for the probabilities of reflection, transmission, and capture in thick layers (under certain conditions, they admit a simple interpretation—it is often quoted in the literature—that is based on the effective capture cross section, which is in inverse proportion to the velocity of a neutron in matter) is investigated, along with the conditions under which there arises the effective capture cross section.     

Statistic D-Property of Voronoi Summation Methods of Class W Q 2

We propose a general method for obtaining Tauberian theorems with remainder for one class of Voronoi summation methods for double sequences of elements of a locally convex, linear topological space. This method is a generalization of the Davydov method of C-points.     

Stress distribution in an infinite transversally isotropic body with a rigid elliptical inclusion in a uniform thermal flux

Universidade de Beira Interior, Portugal: and S. P. Timoshenko Institute of Mechanics, National Academy of Sciences of the Ukraine, Kiev. Translated from Prikladnaya Mekhanika, Vol. 31. No. 11, pp. 3–10, November, 1995.     

Approximation by polynomials with small coefficients

Translated from Matematicheskie Zametki, Vol. 57, No. 1, pp. 150–153, January, 1995.     

Growth and optical properties of a new self-Q-switched laser crystal: Cr:Yb3Al5O12

Cr⁴⁺:YbAG (Cr⁴⁺:Yb₃Al₅O₁₂) crystal with a size up to Φ24 mm×30 mm was grown by the Czochralski method. In the absorption spectrum, there are two absorption bands at 939 and 969 nm, respectively, which are suitable for InGaAs diode laser pumping, and there is an absorption band at 1030 nm, which is suitable for passive Q-switched laser output at 1.03 μm. A broad emission spectrum from 970 to 1100 nm was exhibited from 940 nm wavelength pumping. This crystal is promising as a self-Q-switched laser crystal used for compact, efficient, highly stable, passive self-Q-switched thin chip solid-state lasers.     

Interaction between large and small signals in a resonant transmission line based on magnetostatic waves

The influence of a large signal on the characteristics of a small signal near the frequency of the former is experimentally studied for the case of their simultaneous propagation through a resonant transmission line based on backward volume magnetostatic waves. The effects observed are caused by the excitation of spin waves in a ferromagnetic film at different large-signal frequencies and by the back influence of excited spin-wave packets on the amplitude and phase characteristics of the small signal.     

单循环赛赛程安排的一个图论方法

利用图论的边着色理论建立了一个赛程安排的数学模型 .首先建立 n支球队与完全图 Kn的 n个顶点间的一一对应 ,把球队 Ai和 Aj间的比赛关系抽象成 Kn的顶点 i和 j间的边 ( i,j) .然后分别构造出了图K2 m- 1和 K2 m的正常 2 m-1边着色 .从而给出了各球队每两场比赛间得到的休整时间最均等 ,休整的间隔场次数达到上限值 n2 的一个赛程安排方案     

Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free large-diameter silicon wafers

Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450°C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined.