The spectrum of BSA(v, 3, λ; α) with α = 2,3

In this article, a kind of auxiliary design BSA^* for constructing BSAs is introduced and studied. Two powerful recursive constructions on BSAs from 3‐IGDDs and BSA^*s are exploited. Finally, the necessary and sufficient conditions for the existence of a BSA(v, 3, λ; α) with α = 2, 3 are established. © 2006 Wiley Periodicals, Inc. J Combin Designs 15: 61–76, 2007     

Mg,Si和S同位素链的壳反常

采用考虑轴向形变的相对论平均场理论,以双中子、双质子分离能隙δ_2n/δ_2p作为壳封闭的特征,分析了Mg,Si和S同位素链的壳封闭和壳反常,发现Mg同位素链在N=12,16处,Si同位素链在N=14,S同位素链在N?=16处出现明显的壳封闭结构,Si同位素链在N=28处壳层结构并没有消失.Mg,Si和S同位素链在N=20处壳效应并不太明显.     

Controllability of Functional Integro-Differential Inclusions with an Unbounded Delay

In this paper, a sufficient condition is established for the controllability of neutral functional integro-differential inclusions with an unbounded delay in Banach spaces. The approach used is a fixed-point theorem for condensing maps due to Martelli and the theory of analytic semigroup of linear operators. Communicated by F. Zirilli Research supported by NNSF of China, by the Teaching and Research Award Program for Outstanding Young Teachers in Higher Education Institutions of the Ministry of Education of China, and by the Qing Lan Talent Engineering Fund QL-05-164 of Lanzhou Jiaotong University. The authors are grateful to Professor F. Zirilli and two anonymous referees for valuable suggestions improving this paper.     

Distributions of Chern Numbers of Complete Intersection Three Folds

((Without abstract)) Submitted: October 1996, final version: April 1997     

单糖的高效毛细管电泳间接紫外检测法研究

本文研究了单糖的毛细管电泳间接紫外检测法。实验发现选用β－哚吲乙酸－磷酸钠体系作为背景电解质比较理论想，用于９种未经衍生的单糖进行毛细管电泳分离和间接紫外检测可取得满意结果，对半乳糖，甘露糖和葡萄糖酸的检出极限为２－１０ｐｍｏｌ水平。本文还讨论了背景电解质浓度与样品响应值的关系以及各种操作条件的影响。     

双原子、三原子系统的共振荧光峰值与线宽

计算了双原子、三原子系统共振荧光的峰值与线宽随Rabi频率变化的关系，以及受激辐射与自吸收的影响 关键词：     

产量──密度模型讨论

本文给出产量与密度函数关系     

Quantitative dependence of MR signal intensity on tissue concentration of Gd(HP-DO3A) in the nephrectomized rat.

Cardiac-gated SE 20/224 +/- 20 MR images were obtained from nephrectomized rats before and after intravenously administering 153Gd-Gd(HP-DO3A). The concentration of Gd, [Gd], was linear in dose in myocardium, skeletal muscle, and blood. Under steady-state conditions, where d[Gd]/dt = 0, image intensities (IIN) in regions of interest were compared with the measured [Gd]. IIN was linear in myocardium at less than or equal to 0.61 mumol/g-myocardium (less than or equal to 0.5 mmol/kg dose) and in skeletal muscle at less than or equal to 0.63 mumol/g-muscle (less than or equal to 0.75 mmol/kg). Above 0.6 mumol Gd/g-tissue, IIN did not increase further. The in vivo data were consistent with measured ex vivo and in vivo relaxivities. A 29% greater slope for IIN versus [Gd] in myocardium [14,439 +/- 4350 IIN (mumol/g)] than in muscle [10,258 +/- 5,296 IIN/(mumol/g)] was attributed to a significant difference in blood content: 25% versus 2% weight blood in myocardium and skeletal muscle, respectively. Two components were apparent from plots of ex vivo 1/T1 versus [Gd] in myocardium and muscle, and only one for blood.     

热辐射驱动烧蚀平面金靶的数值定标定律

利用一维辐射流体力学编码数值研究了辐射烧蚀波在平面金靶中的传播情况,并在常温边界条件下得到了辐射流、烧蚀压、质量烧蚀率和特征等离子体密度的定标定律。     

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

Al₂O₃ incorporated HfO₂ films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al₂O₃ incorporation. The incorporation of Al₂O₃ into the HfO₂ film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO₂ film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO₂ film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al₂O₃ on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO₂ contributed to Hf silicide formation on the film surface.