Justification of Averaging Method for Multifrequency Impulsive Systems

We prove new theorems on the justification of the averaging method for multifrequency oscillation systems with pulse influence at fixed times.     

20-relative neighborhood graphs are hamiltonian

For any two points p and q in the Euclidean plane, define LUN_pq = { v | v ∈ R², d_pv < d_pq and d_qv < d_pq}, where d_uv is the Euclidean distance between two points u and v . Given a set of points V in the plane, let LUN_pq(V) = V ∩ LUN_pq. Toussaint defined the relative neighborhood graph of V, denoted by RNG(V) or simply RNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of RNG(V) if and only if LUN_pq (V) = ?. The relative neighborhood graph has several applications in pattern recognition that have been studied by Toussaint. We shall generalize the idea of RNG to define the k-relative neighborhood graph of V, denoted by kRNG(V) or simply kRNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of kRNG(V) if and only if | LUN_pq(V) | < k, for some fixed positive number k. It can be shown that the number of edges of a kRNG is less than O(kn). Also, a kRNG can be constructed in O(kn₂) time. Let E_c = {e_pq| p ∈ V and q ∈ V}. Then G_c = (V,E_c) is a complete graph. For any subset F of E_c, define the maximum distance of F as max_epq∈Fd_pq. A Euclidean bottleneck Hamiltonian cycle is a Hamiltonian cycle in graph G_c whose maximum distance is the minimum among all Hamiltonian cycles in graph G_c. We shall prove that there exists a Euclidean bottleneck Hamiltonian cycle which is a subgraph of 20RNG(V). Hence, 20RNGs are Hamiltonian.     

Modeling hyperelastic behavior of rubber: A novel invariant‐based and a review of constitutive models

A constitutive phenomenological model completing the Gent‐Thomas concept is carried out to formulate laws governing the hyperelastic behavior of incompressible rubber materials. It is shown that the phenomenological Gent‐Thomas model (1958) and the constrained chain model (1992) give similar precise results at small to moderate deformation. On the other hand, comparisons of the outcome of the proposed model with that of the molecular model from the combined concepts of Flory‐Erman and Boyce‐Arruda (2000), and with those of the phenomenological models of Ogden (1982), Yeoh‐Fleming (1997), Pucci‐Saccomandi (2002) and Beda (2005) are made. Residual inconveniences raised by attractive continuum models in rubber elasticity literature have been successfully overcome. Results from both the statistical and phenomenological mechanics concepts are compared with the data of some useful classical materials (rubbers of Treloar, Rivlin‐Saunders, Pak‐Flory and Yeoh‐Fleming). The results permit one to see salient equivalence of the two theories for a more reliable prediction of stress‐stretch response for all states of any mode of deformation. A complete and exhaustive analysis of the Mooney plot that combines small and very large extension‐compression has been quite essential in assessing the validity of models. A method of identification of material parameters is presented and data of the simple tension suffice for the determination of the parameter values. It is shown that the ordinary identification procedures, such as the usual least squares, a very much used numerical method in materials investigation, can be unsuitable in some cases of hyperelastic modeling. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1713–1732, 2007     

Interference inspection of the aspherical components of an objective for nanolithography

Methods and schemes to inspect the EUV mirror shape are developed on the basis of a point diffraction interferometer with computer processing of interferograms. A measurement accuracy to within 0.001 of a wavelength in the visual range is achieved.     

The effect of olefinic terminal chains on the mesomorphic properties of 4,4'-disubstituted diphenyldiacetylenes

New diphenyldiacetylenes of the type with A, B = H and/or F; m = 0, 1; n = 1-4; and X = C n H 2n + 1 , F, CF 3 or CN were synthesized and their mesomorphic properties determined by hot stage polarizing microscopy and DSC. When m = 0, all of these compounds showed only a nematic phase except when X = CF 3 when both nematic and smectic A phases were seen. Both clearing and melting temperatures were higher than those reported for substitution with the corresponding alkyl chains but the much larger increase in clearing temperatures produced considerably wider nematic phases. Eutectic mixtures of a few of these olefins yielded nematic materials also having much wider temperature ranges and higher clearing temperatures than the eutectic mixtures of the alkyl compounds, while retaining their high birefringence and low viscosities. Such materials are of interest for beam-steering devices.

Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

New Heat-Resistant Polyimidates Derived from Bisphenols and Mono- and Dicarboxylic Acid Imidoyl Chlorides

New polyimidates were prepared from bisphenols and mono- and dicarboxylic acid imidoyl chlorides. The structures of the polymers were determined, and their physicochemical, chemical, and thermal properties were studied. The possibility of preparing film and compression materials with good mechanical characteristics from these polymers was examined.     

Ultrashort pulse laser osteotomy

Laser treatment of bone tissue has already been the subject of many studies to find substitutes for mechanical instruments that are nowadays used in implantology and orthopaedics. Mainly lasers with pulse durations in the μs region have been tested leaving surface features that are not always satisfactory. Therefore, in the present study laser osteotomy has been performed with a 330 fs Yb:glass laser, λ = 1040 nm, at a pulse repetition rate of 1 kHz. For bovine spongiosa, compacta, and cartilage, the ablation thresholds as well as the ablation rates for various pulse energies have been determined. Additionally, quadratic areas have been ablated in bone tissue. The remaining morphology has been analyzed via scanning electron microscopy. Laser ablation has also been performed with an Er, Cr:YSGG laser, λ = 2780 nm, PRR = 20 Hz, τ ～ 50 μs. The results of USPL and Erbium laser ablation are compared.     

Diffusion,solubility, and electrical properties of scandium and praseodymium in silicon

An integrated study of diffusion, solubility, and electrical properties of scandium and praseodymium in silicon annealed in various media and temperature ranges (1100–1280 °C) was performed for the first time. The tracer technique, autoradiography, measurements of isothermic capacity and current relaxation, conductivity, and the Hall effect were used for the investigations. The diffusion parameters, solubility, and an acceptor character of scandium and praseodymium impurities in silicon were determined. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 75–77, January, 2007.