Induced Representations of Abelian Groups of Finite Rank

We prove that any irreducible faithful representation of an almost torsion-free Abelian group G of finite rank over a finitely generated field of characteristic zero is induced from an irreducible representation of a finitely generated subgroup of the group G.     

Au(111)上烷烃硫醇SAMs表面应力的理论研究

应用已建立的关于金属表面吸附层中表面应力的统计热力学理论 ,计算了Au(111)上烷烃硫醇SAMs的表面应力及其与烷烃硫醇链长、吸附覆盖度的定量关系 .计算结果与实验相符 ,较好地解释了Berger等人的实验结果 ,特别是解决了在表面应力符号性质上理论与实验的矛盾 .在表面吸附层应力的多种物理起源中 ,通过底物的分子间作用力有着决定性的贡献 ,揭示了分子的吸附能间接地起着重要作用 .这与阴离子化学吸附体系Cl-/Au(111)的有关研究结果相同 .     

非完整约束奇异广义力学系统的Poincaré-Cartan积分

对受高阶微商非完整约束并用奇异Lagrange量描述的广义力学系 统，基于广义Apell-Четаев约束条件，并考虑到系统的内在约束，导出了该非完整 约 束奇异广义力学系统的广义Poincaré-Cartan积分不变量. 并证明了该不变量与非完整约束 奇异广义力学系统的广义正则方程等价.     

CNx纳米管的制备、结构观察及低场致电子发射性能研究

采用高温热解法，以乙二胺为前驱液，在沉积有铁催化剂的p型硅（111）基底上制备出了定向生长的CNx纳米管.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行了形貌观察和表征.CNx纳米管的高度在20?μm左右，直径在50—100nm之间，具有明显的“竹节状”结构，结晶有序度较差.对CNx纳米管薄膜进行低场致发射性能测试：外加电场为1.4V/μm，观察到20?μA /cm2发射电流，外电场升至2.54V/μm时发射电流达到1.280mA/cm2，在较高外电场下，没有发现电流“饱和”.这比 关键词： CNx纳米管 高温热解 “竹节状”结构 场致发射     

Density-Functional Theory Calculations of Normal Modes and Raman Intensities for Tetraazaporphin

The structure, harmonic frequencies, and nonresonance Raman intensities for porphin, tetraazaporphin (TAP), and three of its isotopomers are calculated by the density-functional theory of B3LYP/6-31G(d). Scaling of force constants for porphin in nonredundant natural coordinates is performed. The scaling factors obtained were used to predict the force field and normal modes of TAP and three of its isotopomers. Two alternative methods are used to carry out reliable assignment of the TAP frequencies: wavenumber-linear scaling method and frequency-shift method. There is good agreement between the frequencies predicted within the framework of the three methods used. The conservativeness of the out-of-plane B _2g - and B _3g -modes for porphin and TAP is examined. The Raman spectrum for TAP is simulated. A refinement of the assignment of the experimental frequencies for TAP of even symmetry types on the basis of the calculations performed is made.     

In-Situ Intrinsic Interface Strength Measurement at Elevated Temperatures and its Relationship to Interfacial Structure

A previously developed laser spallation technique has been modified to measure the tensile strength of thin film interfaces in-situ at temperatures up to 1100°C. Tensile strengths of Nb/A-plane sapphire, FeCrAl/A-plane sapphire and FeCrAlY/A-plane sapphire were measured up to 950°C. The measured strengths at high temperatures were substantially lower compared with their corresponding strengths at ambient temperature. For example, at 850°C, the interface tensile strength for the Nb/sapphire (151 ± 17 MPa), FeCrAl/sapphire (62 ± 8 MPa) and FeCrAlY/sapphire (82 ± 11 MPa) interface systems were lower by factors of approximately, 3, 5, and 8, respectively, over their corresponding ambient values. These results underscore the importance of using such in-situ measured values under operating conditions as the failure criterion in any life prediction or reliability models of such coated systems where local interface temperature excursions are expected. The results on alloy film interfaces also demonstrate that the presence of Y increases the strength of FeCrAl/Al₂O₃ interfaces.     

Use of the two-moment boundary condition in the problem of rarefied gas slip over a solid cylindrical surface

The slip velocity of a rarefied gas nonuniform in temperature and mass velocity is calculated for gas slip over the surface of a right circular cylinder. The calculation uses the two-moment boundary condition in an approximation linear in Knudsen number. Corrections to the slip velocity that are due to the interface curvature, volume temperature stresses, and nonuniform temperature distribution in the Knudsen layer are studied as func-tions of the accommodation coefficients in the first two moments of the distribution function. The Bhatnagar-Gross-Krook model of the Boltzmann kinetic equation is employed as the basic equation for the gas state.     

CHARACTERIZATIONS OF JORDAN (?)-SKEW MULTIPLICATIVE MAPS ON OPERATOR ALGEBRAS OF INDEFINITE INNER PRODUCT SPACES

Let H and K be indefinite inner product spaces. This paper shows that a bijective map φ:B(H)→B(K) satisfies φ(AB B A) =φ(A)φ(5) φ(B) φ(A) for every pair A,B ∈B(H) if and only if either φ(A) = cU AU for all A or φ(A) = cUA U for all A; φsatisfies φ(AB A) = φ(A)φ(B) φ(A) for every pair A,B ∈B(H) if and only if either φ(A) = UAV for all A or φ(A) = UA V for all A, where A denotes the indefinite conjugate of A, U and V are bounded invertible linear or conjugate linear operators with U U = c-1I and V V = cI for some nonzero real number c.