Study of period number effect in the superlattice infrared photodetector

Superlattices have been demonstrated previously by our group in the design of the multicolor infrared photodetector. In general, the period number of the superlattice may be up to several dozens. In this paper, we have investigated the performance of the infrared photodetectors especially with 3, 5 and 15 periods. The detector structure contains a thick blocking barrier embedded between two superlattices with different period numbers but with the same well and barrier widths. This double-superlattice structure shows switchable spectral responses between two spectral regions by the voltage polarities. The photoresponse in each spectral region is also tunable by the magnitude of the applied voltage. The voltage-dependent behavior reveals the photoelectron relaxation and transport mechanism in the superlattice miniband. Superlattice with few periods has high electron group velocity, less relaxation effect and less collection efficiency. Therefore the superlattice with few periods may have better responsivity and narrower photoresponse range than the one with many periods. Based on the experimental results of our devices, it is observed that the superlattice with fewer periods has better detectivity, responsivity, wider range of the operational temperature, and more flexible miniband engineering than the conventional multiple quantum well infrared photodetector.     

Differentiation between tracks and damages in SSNTD under the atomic force microscope

We have observed three-dimensional sponge-like structures as well as strips of connecting pits on the surface of the LR 115 detector after etching, which can be confused with the small tracks formed after short etching time. We have employed an atomic force microscope (AFM) to study these “damages” as well as genuine alpha tracks for short etching time. It was found that while the track and damage openings could be similar in size and shape, the depths for the damages were consistently smaller. Therefore, the depth of the pits will serve as a clear criterion to differentiate between tracks and other damages. The ability to discriminate between genuine tracks from other damages is most important for etching for short time intervals.     

A surface-mounted device assembly technique for small optics based on laser reflow soldering

The three-dimensional miniaturized optical surface-mounted device (TRIMO-SMD) is a new flexible and automated assembly technique for small optical components (maximum diameter for a lens is 2 mm) based on laser reflow soldering technique. This technology can be compared to the electronic SMD technique but applied to micro-optical devices. We present some recent developments of TRIMO-SMD in its application to industrial products.     

Steepest Descent, CG, and Iterative Regularization of Ill-Posed Problems

The state of the art iterative method for solving large linear systems is the conjugate gradient (CG) algorithm. Theoretical convergence analysis suggests that CG converges more rapidly than steepest descent. This paper argues that steepest descent may be an attractive alternative to CG when solving linear systems arising from the discretization of ill-posed problems. Specifically, it is shown that, for ill-posed problems, steepest descent has a more stable convergence behavior than CG, which may be explained by the fact that the filter factors for steepest descent behave much less erratically than those for CG. Moreover, it is shown that, with proper preconditioning, the convergence rate of steepest descent is competitive with that of CG.This revised version was published online in October 2005 with corrections to the Cover Date.     

A study of the mechanism and kinetics of interaction between nepheline powder and ammonium hydrofluoride

Behavior of a skeleton silicate, nepheline, in the reaction of fluorination with ammonium hydrofluoride was studied by means of differential-thermal, X-ray phase, and chemical analyses, IR spectroscopy, and scanning electron microscopy.     

Comparative studies of femtosecond to microsecond laser pulses on selective pigmented cell injury in skin

Threshold radiant exposures for grossly apparent immediate whitening and ultrastructural alterations of melanosomes in black guinea pig skin were determined for a series of red visible laser pulses ranging from 4 x 10(-4) to 6.5 x 10(-14) s. Threshold exposures for melanosomal injury were found to be independent of pulsewidth when the pulsewidths were below the estimated thermal relaxation time of melanosomes. Threshold radiant exposures for melanosomal injury were found to increase when the pulsewidths were approximately equal to or above the thermal relaxation time of melanosomes. At longer pulse durations, fracturing of melanosomes was not observed despite the longer exposures necessary for injury. Instead, perimelanosomal vacuoles were noted. These findings are consistent with the theory of selective photothermolysis and provide evidence for the thermal initiation of melanosomal disruption.     

Analysis of finite capacity discrete-time <Emphasis Type="Italic">GI</Emphasis>/<Emphasis Type="Italic">Geo</Emphasis>/1 queueing system with multiple vacations

This paper investigates a discrete-time single-server finite-buffer queueing system with multiple vacations in which arrivals occur according to a discrete-time renewal process. Service and vacation times are mutually independent and geometrically distributed. We obtain steady-state system length distributions at prearrival, arbitrary and outside observer's observation epochs under the late arrival system with delayed access and early arrival system. The analysis of actual waiting-time for both the systems has also been carried out. The model has potential application in high-speed computer network, digital communication systems and other related areas.     

Direct and inverse estimates for a new family of linear positive operators

In the present paper we introduce a new family of linear positive operators and study some direct and inverse results in simultaneous approximation.