Polarization modification of PZT thin films by means of electric fields and stress in scanning force microscopy

Polarization switching in scanning force microscopy (SFM) is influenced by both electric fields and stress, whereby the latter can arise inherently from Maxwell stress. We discuss the influence of electric charges and of the polarization asymmetry on the switching behaviour. For single crystallites of PZT(53/47) thin films, the sectors for ferroelectric, ferroelastoelectric and ferroelastic switching are represented in a field-stress map. The influence of stress on the second harmonic of the SFM is also discussed.     

Fabrication and transport properties of multiwall carbon nanotube crossroads

A multiwall carbon nanotube crossroads has been fabricated by a manipulation technique using a glass microcapillary, and the low temperature transport properties investigated. The two-terminal conductance of an individual tube shows Tomonaga–Luttinger liquid behavior G∝T^α at high temperature and dI/dV ∝V ^α at low temperature. However, no evidence of such a power-law behavior is obtained in the four-terminal conductance at the junction, where the conductance shows an almost metallic behavior ‘corrected’ by weak localization. Weak localization would essentially appear in electron states at the junctions of MWNTs.     

Applying Cognition-Based Assessment to Elementary School Students' Development of Understanding of Area and Volume Measurement

As part of a discussion of cognition-based assessment (CBA) for elementary school mathematics, I describe assessment tasks for area and volume measurement and a research-based conceptual framework for interpreting students' reasoning on these tasks. At the core of this conceptual framework is the notion of levels of sophistication. I provide details on an integrated set of levels for area and volume measurement that (a) starts with the informal, preinstructional reasoning typically possessed by students, (b) ends with the formal mathematical concepts targeted by instruction, and (c) indicates cognitive plateaus reached by students in moving from (a) to (b).     

NDMAP: the best material to study the Haldane's prediction

As predicted by Haldane, spin, S=1 one-dimensional (1D) Heisenberg antiferromagnet (HAF) has an energy gap between the singlet ground state and first excited triplet. On application of magnetic field, the triplet state Zeeman splits and the energy of one of the triplet state becomes zero at a critical field, H_c. Above H_c the system recovers magnetism. Then, we expect that a quasi-1D HAF will show a magnetic long-range ordering (LRO) at low temperatures due to the inter-chain coupling. This field-induced LRO has not been observed before due to complication of the crystal structure in the materials studied so far and/or technical difficulty.From a heat capacity measurement on a single crystal of an S=1 quasi-Q1D HAF, Ni(C₅H₁₄N₂)₂N₃(PF₆), we found an anomaly at a temperature in finite fields indicating a field-induced phase transition. A magnetic LRO is confirmed by a neutron diffraction measurement on the same sample. The temperature versus magnetic field phase diagram of this compound is constructed and discussed.     

Second harmonic generation in In2O3–SiON films doped by Al and Sn

Photoinduced optical and second-order non-linear optical effects in the interfaces separating In₂O₃–SiON (O/N ratio equals 1) films doped with A1, Sn and glass substrates were investigated using the photoinduced optical second harmonic generation. The photoinduced effective second-order optical susceptibility d_eff (at λ=1.76 μm) shows a good correlation with the linear optical susceptibility, particularly with the shift of the absorption edge. The maximal response of the photoinduced optical response signal was observed for the pump–probe delaying time of 34 ps. The performed experimental measurements indicate that the observed effects are mainly caused by the interface potential gradients on the border glass–In₂O₃–SiON film and by additional polarization due to insertion of the Al and Sn atoms. The observed phenomenon may be proposed as a sensitive tool for investigation of thin semiconducting interfacial layers and simultaneously such films may be used as materials for non-linear optical devices.     

Measurement of the K α to L α and K β to L β intensity ratios of seven elements in the atomic number range 52≤ Z ≤62 using photoionization at 59.5 keV1

The Kα to Lα and Kβ to Lβ intensity ratios of seven elements have been measured following photoionization at 59.5 keV by using a Si (Li) detector (FWHM=155 eV at 5.96 keV). The intensity ratios were determined by measuring K and L x-rays emitted from a standard target of a given element. The theoretical values of the Kα to Lα and Kβ to Lβ intensity ratios were calculated using theoretically tabulated values of shell/subshell photoionization cross sections, fluorescence yields, Coster-Kronig transition probabilities, and radiative decay rates for ηKLi≠ and ηKLi=0. The measured values are in good agreement with theoretical results. From Optika i Spektroskopiya, Vol. 97, No. 2, 2004, pp. 186–189. Original English Text Copyright ? 2004 by A. Kü?ük?nder, S?ğüt, E. Kü?ük?nder, Büyükkasap. This article was submitted by the authors in English.