On the problem of stochastic differential inclusions

In this paper we study a stochastic differential equation with multivalued maximally monotone drift operator. Under certain assumptions on the growth of the multivalued operator we prove a theorem on the existence and uniqueness of the solution of such an equation.Translated fromTeoriya Sluchainykh Protsessov, Vol. 15, pp. 54–59, 1987.     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen

     

Simulation of electron bunch generation by an ultrashort-pulse high-intensity laser-driven wakefield

Electron acceleration due to a wakefield excited by a ultrashort-pulse intense laser propagating through a finite-length underdense plasma layer is studied by two-dimensional particle-in-cell simulation. The electron energy distribution is analyzed for moderate to high intensity. For the electron density, where the pulse length is almost half of the plasma wavelength, dramatic changes of the density structure occur with cavity and bunch formation with an increase in the laser intensity, also leading to the appearance of a fast electron component well confined in phase space. The analytical form of the fast electron energy spectrum is also presented.     

Study on anti-emission materials for non-emitting grid applications in microwave power tubes

Hafnium and platinum were deposited onto molybdenum grids by ion-beam assisted deposition method. Electron-emission characteristics from molybdenum grids with Hf and Pt films, which were contaminated by active electron-emission substances (Ba, BaO) of the cathode, were measured using analogous diode method. The surfaces of grids were analyzed by X-ray diffraction. The results revealed that the reaction between BaO and Hf formed BaHfO₃ compound, which greatly reduced the accumulation of BaO on the surface and accordingly decreased grid emission. In contrast, Ba were formed by the decomposition of BaO on the surface of Pt film under high temperature and re-evaporated from its surface, which reduced the active electron-emission substances on the surface of the grid and effectively restrained grid emission. Their mechanisms for grid-emission suppression are discussed and a good method to develop new grid-coating materials is suggested.     

Preparation and characterization of ZnO nanorods from NaOH solutions with assisted electrical field

ZnO naorods on ZnO-coated seed substrates were fabricated by solution chemical method from Zn(NO₃)₂/NaOH under assisted electrical field. The working mechanism of electrical field was analyzed and the factors affecting the rod growth such as potential, precursor concentration and growth temperature were elucidated. The structural and optical properties are characterized by SEM, TEM, XRD, HRTEM and UV-vis. The results indicated that the nanorods have wurtzite structure without electrical field and are primarily of zincite structure under electrical field; when the electrical field is 1.1-1.3 V, not only the elevation of ion diffusion and adsorption lower the crystallite/solution interfacial energy and then the crystal nucleation barrier by increasing charge intensity, but also the production of H⁺ through oxidation of OH⁻ increases properly the degree of solution supersaturation near the substrate, and thus lowers the activation energy. Both the two processes do favor to rod growth. With increasing precursor concentration in this system, the average diameter and length of ZnO nanorods increase, leading to decreasing of optical transmittance. The maximum rod growth rate at given concentration of Zn²⁺ occurs at a specific temperature.     

Twin Paradox and the Logical Foundation of Relativity Theory

We study the foundation of space-time theory in the framework of first-order logic (FOL). Since the foundation of mathematics has been successfully carried through (via set theory) in FOL, it is not entirely impossible to do the same for space-time theory (or relativity). First we recall a simple and streamlined FOL-axiomatization Specrel of special relativity from the literature. Specrel is complete with respect to questions about inertial motion. Then we ask ourselves whether we can prove the usual relativistic properties of accelerated motion (e.g., clocks in acceleration) in Specrel. As it turns out, this is practically equivalent to asking whether Specrel is strong enough to “handle” (or treat) accelerated observers. We show that there is a mathematical principle called induction (IND) coming from real analysis which needs to be added to Specrel in order to handle situations involving relativistic acceleration. We present an extended version AccRel of Specrel which is strong enough to handle accelerated motion, in particular, accelerated observers. Among others, we show that~the Twin Paradox becomes provable in AccRel, but it is not provable without IND.     

The generalized beta- and F-distributions in statistical modelling

The univariate generalized beta- and generalized F-distributions are frequently in recent statistical modellings and applications. They have richer properties than the standard beta- and Snedecor F-distributions and provide more flexibility than these distributions, of which they are natural extensions. Their connection with the Gauss hypergeometric function and Lauricella functions leads to further generalizations and important properties. This article gives a unified and up-to-date treatment of these two generalized distributions using only simple arguments. Proofs are given for some original results and a complete reference to their source is provided for established ones. The important problem of parameter estimation is also studied.