The infrared spectra of the halogen isocyanate and thiocyanate vapor molecules

Fourier transform infrared spectroscopy has been used to investigate the IR spectra of the XNCO (X = Cl, Br, I, CN), the XSCN (X = Cl, Br, I) and the NCNCS vapor molecules from 4800 to 400 cm⁻¹. Vibrational frequencies have been determined for each normal mode of vibration in each molecule in this region.     

Voltage ‐ Current Study of an Atmospheric Dielectric Barrier Discharge

The discharge behaviour of an atmospheric dielectric barrier parallel plate discharge, used for surface treatment, is studied. Since an uniform plasma is preferable for surface treatment, filaments must be avoided in the discharge. The occurrence of filaments can be detected by measuring the current flowing through the discharge. Current and voltage measurements give an indication of the power consumption by the plasma. The power consumption of the plasma as function of the applied frequency is examined. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The high-T c superconductor Sr0.2Lai1.8CuO4: A direct and inverse-photoemission study

We have measured ultraviolet and inverse-photoemission spectra of the novel superconductor Sr₀₂La_1.8CuO₄. Our results compare favorably with recent band-structure calculations for La₂CuO₄.A full account of this work will be published elsewhere [1]     

Detection of silent temporal gaps in sinusoidal markers

Gap detection thresholds were measured by forced-choice procedure for conditions where the duration of a silent gap was varied adaptively between pairs of sinusoidal markers of the same or different frequency. Frequencies of the first sinusoid in a pair of markers ranged from F1 = 500 to 4000 Hz. Second-sinusoid marker frequencies F2 included F1 = F2, and usually frequencies 2%, 5%, 24%, and 50% higher than F1. In preliminary studies the role of presentation level (E/N0) on gap detection was considered. Preliminary data revealed confounding extraneous factors arising from gating transients and from overall stimulus (i.e., markers + gap) and/or masker duration cues. In the main experiments, the contributions of these extraneous cues were evaluated with experimental designs aimed at identifying and minimizing the confounding roles of these cues in gap detection. For conditions where extraneous gating transient cues were minimized (by presenting the sinusoidal markers in a continuous noise masker with random onset phase for the second sinusoid in every pair of markers) and overall stimulus duration cues were diminished (by randomizing the duration of each marker independently), gap detection thresholds increased from 5 to 90 ms as the frequency separation between F1 and F2 was increased by half an octave. When the gap detection thresholds were treated as filter attenuation values by normalizing and converting the data into decibels, the data were closely fit by the roex filter model. On average, the listeners' performances were modeled well by a constant-percentage (7%) bandwidth filter centered on F1.     

On the problem of stochastic differential inclusions

In this paper we study a stochastic differential equation with multivalued maximally monotone drift operator. Under certain assumptions on the growth of the multivalued operator we prove a theorem on the existence and uniqueness of the solution of such an equation.Translated fromTeoriya Sluchainykh Protsessov, Vol. 15, pp. 54–59, 1987.     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen

     

An attempt on the calculation of relativistic potential energy curves: Noble gas difluorides

Total energy SCF calculations were performed for noble gas difluorides in a relativistic procedure and compared with analogous non-relativistic calculations. The discrete variational method with numerical basis functions was used. Rather smooth potential energy curves could be obtained. The theoretical Kr-F and Xe-F bond distances were calculated to be 3.5 a.u. and 3.6 a.u. which should be compared with the experimental values of 3.54 a.u. and 3.7 a.u. Although the dissociation energies are off by a factor of about five it was found that ArF₂ may be a stable molecule. Theoretical ionization energies for the outer levels reproduce the experimental values for KrF₂ and XeF₂ to within 2 eV.     

Reaction of 2-formyl-1,3-cyclohexanediones with cyanoacetamide

Chemistry of Heterocyclic Compounds -     

Convergence of the method of partition of regions for second-order elliptic conjugation problems

Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 41, No. 8, pp. 1137–1141, August, 1989.