On K1 and K2 of Algebraic Surfaces

In this paper we study higher Chow groups of smooth, projective surfaces over a field k of characteristic zero, using some new Hodge theoretic methods which we develop for this purpose. In particular we investigate the subgroup of CH ^r+1 (X,r) with r = 1,2 consisting of cycles that are supported over a normal crossing divisor Z on X. In this case, the Hodge theory of the complement forms an interesting variation of mixed Hodge structures in any geometric deformation of the situation. Our main result is a structure theorem in the case where X is a very general hypersurface of degree d in projective 3-space for d sufficiently large and Z is a union of very general hypersurface sections of X. In this case we show that the subgroup of CH ^r+1 (X,r) we consider is generated by obvious cycles only arising from rational functions on X with poles along Z. This can be seen as a generalization of the Noether–Lefschetz theorem for r = 0. In the case r = 1 there is a similar generalization by Müller-Stach, but our result is more precise than it, since it is geometric and not only cohomological. The case r = 2 is entirely new and original in this paper. For small d, we construct some explicit examples for r = 1 and 2 where the corresponding higher Chow groups are indecomposable, i.e. not the image of certain products of lower order groups. In an appendix Alberto Collino constructs even more indecomposable examples in CH ³ (X,2) which move in a one-dimensional family on the surface X.Contribution to appendix.     

Probing for electrical inclusions with complex spherical waves

Let a physical body Ω in ?² or ?³ be given. Assume that the electric conductivity distribution inside Ω consists of conductive inclusions in a known smooth background. Further, assume that a subset Γ ? ?Ω is available for boundary measurements. It is proved using hyperbolic geometry that certain information about the location of the inclusions can be exactly recovered from static electric measurements on Γ. More precisely: given a ball B with center outside the convex hull of Ω and satisfying (B? ∩ ?Ω) ? Γ, boundary measurements on Γ with explicitly given Dirichlet data are enough to determine whether B intersects the inclusion. An approximate detection algorithm is introduced based on the theory. Numerical experiments in dimension two with simulated noisy data suggest that the algorithm finds the inclusion‐free domain near Γ and is robust against measurement noise. © 2007 Wiley Periodicals, Inc.     

Simulation of electron bunch generation by an ultrashort-pulse high-intensity laser-driven wakefield

Electron acceleration due to a wakefield excited by a ultrashort-pulse intense laser propagating through a finite-length underdense plasma layer is studied by two-dimensional particle-in-cell simulation. The electron energy distribution is analyzed for moderate to high intensity. For the electron density, where the pulse length is almost half of the plasma wavelength, dramatic changes of the density structure occur with cavity and bunch formation with an increase in the laser intensity, also leading to the appearance of a fast electron component well confined in phase space. The analytical form of the fast electron energy spectrum is also presented.     

Evaluation of fine structure of tubular zeolite NaA membrane by FTIR-ATR and FIB-TEM.

A zeolite NaA (LTA) membrane supported by an alumina porous support tube for pervaporation (PV) dehydration of ethanol was characterized by transmission electron microscopy (TEM) using a focused ion beam (FIB) thin-layer specimen preparation technique and by Fourier transform infrared attenuated total reflectance method (FTIR-ATR) using a diamond prism as the waveguide. FIB-TEM clearly presented cross-section images up to about 15 microm depth from the membrane surface. FTIR-ATR monitored the Si-O asymmetric stretching vibration spectrum. The Si-O spectrum was compared with the TEM image and their relationships were discussed. By combining the two methods, we could study the thickness of surface LTA crystals, the grain boundary, the LTA/alumina interface structure and the crystallinity and density of materials inside of the alumina porous support. Consequently, fine structure changes of the LTA membrane corresponding to the hydrothermal synthesis condition could be sensitively detected.     

Performance evaluation of PVdF gel polymer electrolytes

A series of gel polymer electrolytes containing PVdF as homo polymer, a mixture of 1:1 Ethylene Carbonate (EC) : Propylene Carbonate (PC) as plasticizer and lithium-bistrifluoromethane sulphone imide [imide — LiN (CF₃SO₂)₂] has been developed. Amounts of polymer (PVdF), plasticizer and the imide lithium salt have been varied as a function of their weight ratio composition in this regard. Dimensionally stable films possessing appreciable room temperature conductivity values have been obtained with respect to certain weight ratio compositions. However, conductivity data have been recorded at different possible temperatures, i.e., from 20 °C to 65 °C. XRD and DSC studies were carried out to characterize the polymer films for better amorphicity and reduced glass transition temperature, respectively. The electrochemical interface stability of the PVdF based gel polymer electrolytes over a range of storage period (24 h – 10 days) have been investigated using A.C. impedance studies. Test cells containing Li/gel polymer electrolyte (GPE)/Li have been subjected to undergo 50 charge-discharge cycles in order to understand the electrochemical performance behaviour of the dimensionally stable films of superior conductivity. The observed capacity fade of less than 20% even after 50 cycles is in favour of the electrochemical stability of the gel polymer electrolyte containing 27.5% PVdF −67.5 % EC+PC −5% imide salt. Cyclic voltammetry studies establish the possibility of a reversible intercalation — deintercalation process involving Li⁺ ions through the gel polymer electrolyte.     

Calculation of heat transfer and uniformity of chemical amplification during post-exposure bake

Heat transfer in a resist-coated silicon wafer using a bake process is theoretically evaluated by modeling the three-dimensional diffusion process, focusing on the controllability of the lithographic performance of chemically amplified resists. Six models of various ambient conditions are used. The proximity gap between the hotplate and the wafer is found to have a dominant influence on the heat transfer process for the whole system. Because the atmosphere near the wafer acts as a thermal diffusion buffer layer, no temperature gradient occurs in the resist, even when it is subjected to convective heat transfer from the resist surface. Experimental results obtained by X-ray lithography confirm the calculation results.     

A Simple Chaotic Circuit with Impulsive Switch Depending on Time and State

This paper presents a simple chaotic circuit consisting of two capacitors, one linear two-port VCCS and one time-state-controlled impulsive switch. The impulsive switch causes rich chaotic and periodic behavior. The circuit dynamics can be simplified into a one-dimensional return map that is piecewise linear and piecewise monotone. Using the return map, we clarify parameter conditions for existence of chaotic and periodic attractors and coexistence state of attractors.     

The representation type of Hecke algebras of type B

This paper determines the representation type of the Iwahori-Hecke algebras of type B when q≠±1. In particular, we show that a single parameter non-semisimple Iwahori-Hecke algebra of type B has finite representation type if and only if q is a simple root of the Poincaré polynomial, confirming a conjecture of Uno's (J. Algebra 149 (1992) 287).     

Growth process of TiC clusters from Ti nanoparticles with evaporated carbon layer

Titanium carbide formation by the solid–solid reaction on the surface of Ti nanoparticles was studied in situ using a high-resolution transmission electron microscope with a heating stage. The cross-sectional image of the Ti surface was clearly observed. Vacuum-deposited carbon covered the whole the surface of Ti nanoparticles in spite of the partly evaporation on the nanoparticle surface. The diffusion of the carbon atoms inside the Ti nanoparticles depended on the size of the nanoparticles. When the Ti nanoparticle diameter was less than 30 nm, carbon atoms diffused into the Ti nanoparticle and formed TiC. The superstructure of the Ti nanoparticles was observed, which revealed the growth process of TiC to be the diffusion of carbon atoms. For Ti nanoparticles with diameter larger than 30 nm it was observed that diffusion of Ti atoms into the carbon layer was dominant, which resulted in formation of TiC in the carbon layer at the surface of Ti nanoparticles.