Raman scattering of polycrystalline GaSb thin films grownby co-evapouration process

<正>This paper reports that GaSb thin films have been co-deposited on soda-lime glass substrates.The GaSb thin film structural properties are characterized by Raman spectroscopy.The Sb-A_1g/GaSb-TO ratio decreases rapidly with the increase of substrate temperature,which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease.In Raman spectra,the transverse optical（TO） mode intensity is stronger than that of the longitudinal optical（LO） mode,which indicates that all the samples are disordered.The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the GaSb thin film.A downshift of the TO and LO frequencies of the polycrystalline GaSb thin film to single crystalline bulk GaSb Raman spectra is also observed.The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 GPa.The uniaxial stress decreases with increasing substrate temperature.These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.     

Theoretical studies on the one- and two-photon absorption properties of azulenylporphyrins and azulene-fused porphyrins

The electronic structures, one-photon absorption (OPA) and two-photon absorption (TPA) properties of the azulenylporphyrins and azulene-fused porphyrins have been comparatively studied by using DFT/B3LYP/6-31G(d) and the ZINDO/SDCI method. With the number of azulenyl groups increasing, the OPA wavelengths of all molecules are red-shifted in 400--600~nm and the two-photon absorption cross section is gradually enlarged. The azulene-fused structures facilitate an expanding conjugated area and increasing TPA cross section. The origin of TPA properties of studied compounds is studied with a two-level model. In summary, the azulene-fused porphyrins exhibit strong two-photon absorption.     

低栅极电压控制下带有phenyltrimethoxysilane单分子自组装层的有机薄膜晶体管场效应特性研究

制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO₂作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane （OTS）,phenyltrimethoxysilane （PhTMS）,来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|V 关键词： 有机薄膜晶体管 自组装单分子层 场效应迁移率 低栅极调制电压     

Density and impurity profile behaviours in HL-2A tokamak with different gas fuelling methods

The electron density profile peaking and the impurity accumulation in the HL-2A tokamak plasma are observed when three kinds of fuelling methods are separately used at different fuelling particle locations. The density profile becomes more peaked when the line-averaged electron density approaches the Greenwald density limit n_G and, consequently, impurity accumulation is often observed. A linear increase regime in the density range n_e< 0.6n_G and a saturation regime in n_e > 0.6n_G are obtained. There is no significant difference in achieved density peaking factor f_ne between the supersonic molecular beam injection (SMBI) and gas puffing into the plasma main chamber. However, the achieved f_ne is relatively low, in particular, in the case of density below 0.7n_G, when the working gas is puffed into the divertor chamber. A discharge with a density as high as 1.2n_G, i.e. n_e = 1.2n_G, can be achieved by SMBI just after siliconization as a wall conditioning. The metallic impurities, such as iron and chromium, also increase remarkably when the impurity accumulation happens. The mechanism behind the density peaking and impurity accumulation is studied by investigating both the density peaking factor versus the effective collisionality and the radiation peaking versus density peaking.     

Improved thermal model and its application in UV high-power pulsed laser ablation of metal target

An improved thermal model describing UV high-power nanosecond laser ablation of metal target is presented. The vaporization effect, the plasma shielding effect, as well as the absorption coefficient and absorptivity dependence of temperature are considered in this model. Take iron target as an example, the numerical solutions are obtained from the heat flow equations (before and after melting) using a finite difference method. The space and time dependence of temperature of the target, the time dependence of temperature at two different positions for a certain laser fluence, and the ablation rate as a function of laser fluence are also presented. The numerical results that agreed well with the experimental data are much better than the one without, which indicates that the above two effects and the temperature dependence of absorption coefficient and absorptivity in UV high-power laser ablation of metal target should not be neglected. We hope the present model will be useful for further experimental investigation of metal thin films prepared by pulsed laser deposition.     

分布损耗对回旋行波放大器稳定性的影响

基于电磁模式的色散方程和回旋管非线性理论,研究了损耗层厚度对回旋行波放大器注-波互作用的影响.结果表明,合理选择损耗层电导率和厚度能够让期待的工作模式TE₀₁衰减较小,而对应的竞争模式TE₂₁因损耗很大而更难以起振,随厚度的增加,放大带宽从两边向中间收缩变窄,频带中间部分的输出功率会上升,曲线更加平坦,从而达到改善互作用稳定性的目的. 关键词： 回旋行波放大器 起振长度 起振频率 饱和功率     

利用DDA方法计算大气气溶胶粒子光学特性

大气气溶胶是大气的重要组成部分,其光学特性是研究大气辐射传输特性的重要参量。本文基于DDA方法,对不同形状气溶胶粒子的光学特性进行计算,得到气溶胶粒子的消光因子、吸收因子随波长变化的数值结果。结合Muller散射矩阵,给出了气溶胶粒子散射强度和极化度的角分布,为研究大气辐射传输提供了有效的方法。     

改进的QMD模型研究不同入射道条件对同位旋分馏强度的影响

通过在同位旋相关量子分子动力学模型(IQMD)中引入同位旋依赖的动量相关作用和同位旋相关的Skyrme势,得到了改进的同位旋依赖的量子分子动力学模型,并用此模型分析和讨论了中能重离子碰撞中的同位旋分馏强度随入射道条件的演化.结果表明在中能重离子碰撞中各种入射道条件下同位旋依赖的动量相关作用和Skyrme势有着明显的同位旋效应,它们减弱了同位旋分馏的过程. 关键词： 同位旋分馏 同位旋相关的动量相关作用 同位旋相关的Skyrme势     

Dynamic Alignment of D2 Enhanced by Two Few-cycle Pulses

利用数值方法求解D2分子刚性转子模型在超短飞秒激光脉冲作用下的薛定谔方程,计算了双原子分子D2在两束固定强度的飞秒激光脉冲作用下,延迟时间对于分子取向的影响.结果表明,只要选取合适的延迟时间,就能很好改善分子取向;保持两束激光强度不变,通过调整两束脉冲的宽度,选择合适的延迟时间能够进一步有效提高D2分子的取向程度.