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101.
102.
Kyu Hwang Yeon Suk Seong Kim Chung In Um Thomas F. George 《International Journal of Theoretical Physics》2003,42(9):2043-2059
Quantum Hamiltonian systems corresponding to classical systems related by a general canonical transformation are considered. The differential equation to find the unitary operator, which corresponds to the canonical transformation and connects quantum states of the original and transformed systems, is obtained. The propagator associated with their wave functions is found by the unitary operator. Quantum systems related by a linear canonical point transformation are analyzed. The results are tested by finding the wave functions of the under-, critical-, and over-damped harmonic oscillator from the wave functions of the harmonic oscillator, free-particle system, and negative harmonic potential system, using the unitary operator to connect them, respectively. 相似文献
103.
Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (VInH4)+ to (VInH4)0. This phenomenon was more obvious in P-rich samples that have a higher concentration of VInH4. The transformation temperature of approximately 120 K suggests that the complex VInH4 is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral VInH4 accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP. 相似文献
104.
A closed microwave digestion method followed by inductively coupled plasma spectrometric (ICP-MS) analysis was evaluated for the determination of trace impurities in photoresist. To optimize the digestion procedure, several digestion parameters such as acid, heating temperature and heating time were evaluated. Besides, the digestion efficiency of used photoresist material and the recovery of analyte elements obtained by the use of gravimetric method and ICP-MS measurement, individually, were also compared to clarify the completeness of digestion. According to our experiments, the gravimetric method was found to be not so relevant to the completeness of digestion, because the remaining sample matrix could cause suppression effect in the subsequent ICP-MS measurement. In view of minimizing blank value and working time, a simple single-step heating program was proposed to mineralize 0.25 ml of photoresist material with 5 ml of nitric acid at 180 °C for 10 min. Based on the comparative study of the analytical results obtained by instrumental neutron activation analysis (INAA) and proposed method, the reliability of proposed method for the determination of trace metallic impurities in photoresist material has been confirmed. 相似文献
105.
A high-speed and economical optical local access network system is proposed where bi-directional polarization multiplexing is applied to a bi-directional transmission. Experimental results using a prototype system confirmlow optical loss and environmental stabilities. 相似文献
106.
Formation of p-type ZnO film on InP substrate by phosphor doping 总被引:3,自引:0,他引:3
Kyu-Hyun Bang Deuk-Kyu Hwang Min-Chul Park Young-Don Ko Ilgu Yun Jae-Min Myoung 《Applied Surface Science》2003,210(3-4):177-182
ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn3P2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn3P2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices. 相似文献
107.
Effects of hysteretic and aerodynamic damping on supersonic panel flutter of composite plates 总被引:1,自引:0,他引:1
The governing equation for the finite element analysis of the panel flutter of composite plates including structural damping is derived from Hamilton's principle. The first order shear deformable plate theory has been applied to structural modelling so as to obtain the finite element eigenvalue equation. The unsteady aerodynamic load in a supersonic flow is computed by using the linear piston theory. The critical dynamic pressures for composite plates have been calculated to investigate the effects of structural damping on flutter boundaries. The effects are dependent on fiber orientation because flutter mode can be weak or strong in the fiber orientation of composite plates. Structural damping plays an important role in flutter stability with low aerodynamic damping but would not affect the flutter boundary with high aerodynamic damping. 相似文献
108.
Tm3+/Yb3+-codoped germanate-niobic (GN) and germanium-bismuth (GB) glasses have been synthesized by conventional melting and quenching method. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions 1G4→3H6 and 1G4→3H4, respectively, were observed at room temperature. The possible up-conversion mechanisms are discussed and estimated. GN glass showed a weaker up-conversion emission than GB glass, which is inconsistent with the prediction from the difference of maximum phonon energy between GN and GB glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. For the first time, our results reveal that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency. 相似文献
109.
A simple and accurate approach for analysis of dielectric periodic structures is proposed in this paper. The method combines the coupled-mode theory with Floquet theory and joins the eigenmode expansion with the space harmonic expansion properly. As a result, the whole analysis procedure is significantly simplifid. Numerical results for the filter characteristics of some dielectric periodic structures show that the present method is effective, accurate and useful.Supported by The National Natural Science Foundation of China and The Foundation of State Educational Commission. 相似文献
110.
E. Kapon M. Walther J. Christen M. Grundmann C. Caneau D.M. Hwang E. Colas R. Bhat G.H. Song D. Bimberg 《Superlattices and Microstructures》1992,12(4)
Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than KBT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated. 相似文献