Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Minimal Submanifolds in a Locally Symmetric and Conformally Flat Space

We study minimal submanifolds in the locally symmetric and conformally flat Riemannian manifold and generalize Yau's result obtained in J. Amer. Math. 97 (1975), 76–100.     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

Entropy for frame bundle systems and Grassmann bundle systems induced by a diffeomorphism

A Liao hyperbolic diffeomorphism has equal measure entropy and topological entropy to that of its induced systems on frame bundles and Grassmann bundles. This solves a problem Liao posed in 1996 for Liao hyperbolic diffeomorphisms.     

Er3+掺杂的Bi2O3-B2O3-SiO2玻璃的光谱性质

测试了Bi₂O₃-B₂O₃-SiO₂玻璃中的Er³⁺离子的吸收光谱、发射光谱、⁴I_13/2的荧光寿命、拉曼光谱,及OH^-的傅里叶红外吸收光谱。应用Judd-Ofelt理论计算了该玻璃中的Er³⁺离子的J-O参数、振子强度、⁴I_13/2能级的寿命,从而利用测得的⁴I_13/2的荧光寿命得出了⁴I_13/2能级的量子效率(15%)。由于较低量子效率可能与OH^-有关,所以计算了玻璃中的OH^-浓度,发现其浓度较高(1.66×10¹⁹cm^-1,相当于Er³⁺浓度的3倍)。应用McCumber理论和四能级模型计算了Er³⁺离子的受激发射截面和荧光发射光谱的半峰全宽,结果与通过吸收光谱计算所得基本吻合。根据透射率和折射率的关系计算了折射率,发现和测量值相差很大,说明有较大的散射,通过拉曼光谱和显微镜测试,认为是玻璃中的微小气泡造成的。     

Synthesis and biological activity of S-oxo-[(methylthio)-methyl]cysteinols

A convenient route was developed to synthesize S-oxo-[(methylthio)-methyl]cysteinols on a large scale from cheap l-serine as the starting material. The structures of diastereoisomers were determined by NMR, CD spectra, and X-ray diffraction analysis. All four diastereoisomers were examined for their ability to inhibit certain bacteria from growing.     

提高微晶硅薄膜太阳电池效率的研究

采用甚高频等离子体增强化学气相沉积技术制备了系列微晶硅薄膜太阳电池，指出了气体总流量和背反射电极的类型对电池性能参数的影响.电池的I-V测试结果表明：随反应气体总流量的增加，对应电池的短路电流密度、开路电压和填充因子都有很大程度的提高，结果使得电池的光电转换效率得以提高.另外，ZnO/Ag/Al背反射电极能明显提高电池的短路电流密度，进而也提高了电池的光电转换效率.对气体总流量和背反射电极类型影响电池效率的原因进行了分析. 关键词： 微晶硅薄膜太阳电池 气体流量 ZnO/Ag/Al背反射电极     

基于液晶光阀的全息照相控光仪

设计了通过液晶光阀自动调整全息照相物光和参考光辐照比至最佳状态,同时能实现曝光时间自动控制的控光仪.该仪器巧妙运用液晶光阀和硅光电池器件,使测量、调整、自控一体化,从而提高拍摄优质全息图的工作效率.     

a-C:F薄膜的热稳定性与光学带隙的关联

以CF4和C6H6的混合气体作为气源,在微波电子回旋共振化学气相沉积(ECRCVD)装置中制备了氟化非晶碳薄膜(aC:F),并在N2气氛中作了退火处理以考察其热稳定性.通过傅里叶变换红外吸收谱和紫外可见光谱获得了薄膜中CC双键的相对含量和光学带隙,发现膜中CC键含量与光学带隙之间存在着密切的关联,在高微波功率下沉积的氟化非晶碳膜具有低的光学带隙和较好的热稳定性. 关键词： 氟化非晶碳膜 光学带隙 退火温度 热稳定性     

纳米MOSFET迁移率解析模型

从玻尔兹曼方程出发，重新计算了纳米MOSFET沟道内的载流子所服从的分布函数，特别是考虑了纳米MOSFET横向电场和纵向电场之间的相互作用，并且以得到的非平衡状态下的分布函数为基础，考虑载流子寿命和速度的统计分布，给出了纳米MOSFET载流子迁移率的解析表达式.通过与数值模拟结果进行比较和分析，该迁移率解析模型形式简洁、物理概念清晰，且具有相当精度. 关键词： 玻尔兹曼方程 纳米MOSFET 迁移率 沟道有效电场