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31.
The influence of impurity scattering is studied theoretically in a two-layer model for the high-T
c
superconductor Y1Ba2Cu3O7– with intra- and inter-layer pairing. Two types of impurities are considered: (I) impurities which conserve the reflection symmetry of the two layers and (II) impurities which break it. Impurities of type (I) have no influence on the critical temperature. Type (II) impurities have strong influence onT
c
as well as onH
c2
if there is a pairing interaction between carriers of different layers. The treatment of type (II) impurities is generalized to a periodic layer model appropriate for La2–x
Ba
x
CuO4. Available experiments on impurities in Y1Ba2Cu3O7– and La2–x
Ba
x
CuO4 are interpreted with our theory. 相似文献
32.
A. Türler H. W. Gäggeler D. T. Jost P. Armbruster W. Brüchle H. Folger F. P. Heßberger S. Hofmann G. Münzenberg V. Ninov M. Schädel K. Sümmerer J. V. Kratz U. Scherer 《Zeitschrift für Physik A Hadrons and Nuclei》1988,331(3):363-364
The isotope254No was produced in the fusion reaction48Ca +208Pb. Using the velocity filter SHIP and radiochemical techniques it was found that the nuclide254No with a half-life of 55 s decays byα, EC, and spontaneous-fission. Deduced partial half-lives are (61±2) s forα-decay, (550 ?160 +370 ) s for EC and [2.2 ?1.0 +2.0 ]×104 s for spontaneous fission. 相似文献
33.
34.
Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere 总被引:1,自引:0,他引:1
D. Hofmann G. Müller N. Streckfuß 《Applied Physics A: Materials Science & Processing》1989,48(4):315-319
Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×107cm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E
A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×103 cm2/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was =3.6 × 105cm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of >107 cm can be achieved for bulk InP with the purity of nominally undoped material (1015 to 1016cm–3). 相似文献
35.
Stephan DW 《Angewandte Chemie (International ed. in English)》2000,39(3):501-502
Long-standing tenets of a discipline must be questioned in an effort to fully understand the fundamentals of science. This is exemplified by the synthesis of planar-tetracoordinate compounds, such as the square-planar phosphonium ion 1 by Driess et al., which provide exceptions to van't Hoff - Le Bel rules. 相似文献
36.
Kickham JE Guérin F Stewart JC Stephan DW 《Angewandte Chemie (International ed. in English)》2000,39(18):3263-3266
37.
Harry Biron Christiane Grller-Walrand Stephan De Jaegere 《Chemical physics letters》1973,20(6):581-585
A quantitative comparison between the excitation and absorption spectra of Eu3+ in aqueous solution is given which leads to the conclusion that fluorescence quantum yields are independent of the excitation wavelength. Use is made therefore of the series of homologous lines 5D3, 5D2, 5D1, 5D0 → 7F1. 相似文献
38.
Conclusion We have considered allNN-partial waves simultaneously. The central part of the one gluon exchange is always repulsive, the tensor part can be neglected and the spin-orbit part is too weak for this choice of parameters. An additional colourless VMEP potential allows us to reproduce the experimental data. However, this potential cannot be related to a long range one-pion exchange potential.Presented at the symposium Mesons and Light Nuclei, Bechyn, Czechoslovakia, May 27–June 1, 1985. 相似文献
39.
Aihara H Alston-Garnjost M Avery RE Barbaro-Galtieri A Barker AR Barnes AV Barnett BA Bauer DA Bengtsson H Bintinger DL Bobbink GJ Bolognese TS Bross AD Buchanan CD Buijs A Cain MP Caldwell DO Clark AR Cowan GD Crane DA Dahl OI Derby KA Eastman JJ Eberhard PH Eisner AM Enomoto R Erné FC Fujii T Gary JW Gorn W Hauptman JM Hofmann W Huth JE Hylen J Kamae T Kaye HS Kees KH Kenney RW Kerth LT Ko W Koda RI Kofler RR Kwong KK Lander RL Langeveld WG Layter JG Linde FL Lindsey CS Loken SC Lu A Lu X 《Physical review letters》1986,57(8):945-948
40.
N. F. Will K. Hofmann M. Schulz 《Applied Physics A: Materials Science & Processing》1986,41(2):107-114
Trap centers in the Si-SiO2 interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 1012–3 × 1013 cm–2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or 900° C. Three Au-related trap levels have been observed in the interface region, which were attributed to the Au-donor (E
v
+0.35 eV), the Au-acceptor (E
v
+0.53 eV), and the Au-Fe complex (E
v
+0.45 eV). The trap concentration profiles show that the Si-SiO2 interface affects the Au concentration in a depth range of 1 m from the interface and that gettering of Au occurs at the interface. The interface state density is independent of the Au concentration at the interface even for concentrations of 1015 cm–3. 相似文献