超导材料的各向异性特征与超导转变温度T_c

在本文中,以电声子机制超导电性理论为基础,用电负性均衡原理研究了由于超导材料的各向异性引起的电子态密度分布的不均匀性,晶格稳定性的差异性及超导材料中元素成键特征对超导转变温度影响的特征,提出了在各向异性的超导材料中电声子机制可以产生高的超导转变温度Tc.     

Precision position measurement of single atom

Atom localization in a five-level atomic system under the effect of three driving fields and one standing wave field is suggested. A spontaneously emitted photon from the proposed system is measured in a detector. Precision position measurement of an atom is controlled via phase and vacuum field detuning without considering the parity violation.     

Primary result of ~(236)U measurement with accelerator mass spectrometry at CIAE

The rare isotope 236U has a half-life of 2.342(3)×107 years,and is produced principally by thermal neutron capture on 235U.The isotopic atom ratio of 236U/238U depends on the integral thermal neutron flux received by the material of interest.236U is potentially useful as a fingerprint for indicating the presence of neutron-irradiated uranium usually originating from nuclear activity.By extracting negative molecular ion UO- from the uranium oxide target,simulating the 236U16O- beam transport with 238U16O- an...     

First experimental research of the bunch compressor at CAEP

Magnetic bunch compressor is one of the key technologies on the path to next generation accelerator driven facilities. In this paper we report the design principles and the first experimental research of the bunch compressor developed at Chinese Academy of Engineering Physics （CAEP）. The length of the bunch after compressor is found to be about 0.7 ps （rms） and the peak current exceeds 500 A when operated in the optimized condition. The sensitivity of the bunch length on the phase of the acceleration field and magnetic field of the bunch compressor was also measured and analyzed.     

Instrumentation of coherent X-ray imaging and the primary experimental results

Coherent X-ray microscopy has advanced towards higher-energy, more brilliant sources over the past decade since its demonstrations, and many advancements have been made towards optimizing this imaging technique. Here we present both the experimental instrument for obtaining diffraction patterns and the primary reconstruction of yeast cell 2D projection. In addition, the characteristics of the existing optics at BL29XUL of SPring-8 Facility and the method of image reconstruction are discussed.     

Induced electric fields and plasmonic interactions between a metallic nanotube and a thin metallic film

We have numerically simulated the induced electric fields and the plasmonic interactions of a metallic nanotube near a thin metallic film. Our study shows that the energies and intensities of the plasmon resonances depend strongly on the aspect ratio (the ratio of the inner to outer radius) of the nanotube as well as the separation between the center of the nanotube and the upper surface of the metallic film and the thickness of the film. The enhancement of the induced electric field of this system reaches ...     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.     

Simulation of growing GaN in vertical HVPE reactor

The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. It is found that when the direction of gravity is opposite to the direction of GaCl flow inlet,there exits a distance at which the uniformity of the deposition is optimal. Here the good uniformity of the deposition is obtained when the distance between the substrate and GaCl inlet is 5 cm. The parameters of gas flow used in growing GaN are also optimized. In addition, the influence of gravity and buoyancy on...     

Relative position determination of a lunar rover using high-accuracy multi-frequency same-beam VLBI

Multi-frequency same-beam VLBI means that two explorers with a small separation angle are simultaneously observed with the main beam of receiving antennas. In the same-beam VLBI, the differential phase delay between two explorers and two receiving telescopes can be obtained with a small error of several picoseconds. The differential phase delay, as the observable of the same-beam VLBI, gives the separation angular information of the two explorers in the celestial sphere. The two-dimensional relative position on the plane-of-sky can thus be precisely determined with an error of less than 1 m for a distance of 3.8×105 km far away from the earth, by using the differential phase delay obtained with the four Chinese VLBI stations. The relative position of a lunar rover on the lunar surface can be determined with an error of 10 m by using the differential phase delay data and the range data for the lander when the lunar topography near the rover and the lander can be determined with an error of 10 m.