Helical twisting power of antiferroelectric chiral terphenyls in different matrices

To determine the influence of chemical structure on the Helical Twisting Power (HTP), we tested four optically active dopants having a terphenyl rigid core and the same chiral centre but differing in the length of nonchiral terminal chain and the substitution of benzene rings with fluorine atoms. The compounds were added to different achiral liquid crystalline matrices: nematic and smectic C. It was found that HTP as well as its temperature variation depends on the kind of used matrices. It gives a conclusion that information about HTP obtained in one matrix cannot be uncritically transferred to another one.     

Two-point Padé approximants for formal Stieltjes series

We prove that certain two-point Padé approximants occupying the diagonal of the Padé table form monotone sequences of lower and upper bounds uniformly converging to a Stieltjes function. The results can be applied to the theory of inhomogeneous media for the calculation of the bounds on the effective transport coefficients of heterogeneous materials.     

A Goal Programming model of the reference point method

Real-life decision problems are usually so complex they cannot be modeled with a single objective function, thus creating a need for clear and efficient techniques of handling multiple criteria to support the decision process. The most commonly used technique is Goal Programming. It is clear and appealing, but in the case of multiobjective optimization problems strongly criticized due to its noncompliance with the efficiency (Pareto-optimality) principle. On the other hand, the reference point method, although using similar control parameters as Goal Programming, always generates efficient solutions. In this paper, we show how the reference point method can be modeled within the Goal Programming methodology. It allows us to simplify implementations of the reference point method as well as shows how Goal Programming with relaxation of some traditional assumptions can be extended to a multiobjective optimization technique meeting the efficiency principle.     

Preparation and semiconducting properties of Th3As4

The resistivity, thermoelectric power and Hall constant in the temperature range of 78–830 K were determined for polycrystalline Th₃As₄ samples obtained by annealing thin thorium slabs in arsenic vapour. The samples examined were n-type semiconductors with a carrier concentration ranging from 1.0 × 10¹⁸cm^?3 to 2.8 × 10¹⁸ cm^?3 for which the effective mass was found to be equal to 0.55–0.76m₀. The Hall mobility, about 450cm²V^?1s^?1 at room temperature, obeys a $\text{T}{}^{\mathrm{<mtext>?3</mtext><mtext>2</mtext>}}$ law at high temperatures. On the basis of the electrical measurements the forbidden gap of Th₃As₄ was found to be equal to 0.43 eV.     

A note on the Percus-Yevick and hypernetted chain theories of adsorption: The second and third virial coefficients for a hard-sphere gas in contact with a wall with a soft surface layer

The first three virial coefficients of a new type in the density expansion of the adsorption isotherm for hard spheres in contact with a wall with a soft surface layer are calculated. The results are compared with those for hard spheres in contact with a hard wall.     

Renormalization group approach to lattice gauge field theories

We study four-dimensional pure gauge field theories by the renormalization group approach. The analysis is restricted to small field approximation. In this region we construct a sequence of localized effective actions by cluster expansions in one step renormalization transformations. We construct also -functions and we define a coupling constant renormalization by a recursive system of renormalization group equations.     

The Monte-Carlo model of a light-emitting diode

The first complete Monte-Carlo model of a surface light-emitting diode is presented in this paper. In the model all important phenomena (including the two-dimensional diffusion of minority carriers before their recombination in the active region and the re-emission of radiation) are taken into account. The influence of various construction parameters on the external quantum efficiency of the homojunction GaAs diode is examined.     

Scattering of electrons by charged dislocations in InSb-type semiconductors

Electron scattering by parallel arrays of charged dislocations in InSb-type semiconductors is considered. In the theoretical approach the nonparabolic structure of the conduction band of the semiconductors considered is taken into account in the approximation of a simplified Kane's band model. The effect of screening by free electrons of the dislocation charge is also included in the theory. The calculated relaxation time of the electrons is used to derive a formula for the dislocation-limited electron mobility in the semiconductors. Some examples of calculations of the charged dislocation-limited mobility as a function of the electron concentration with the dislocation density as a parameter are given for n-InSb at 77 K and 300 K. The ratio of the magnitudes of the charged dislocation-limited mobility to the ionized impurity-limited mobility in n-type material at low temperatures is also discussed.     

Black hole uniqueness from a hidden symmetry of Einstein's gravity

A theorem is proven that the only possible exterior solution for a pseudostationary, rotating, electrovacuum black hole with nondegenerate event horizon is the Kerr-Newman solution withM ²-J²/M²-Q²>0. A special role played in the proof of this theorem by the hidden symmetry groupSU(1, 2) of Einstein's equations is established.This essay received the third award from the Gravity Research Foundation for the year 1983 [Ed.].