Experiments with a plasma-filled rod-pinch diode on the MIG generator

Experimental data for creating an X-ray source several millimeters in size on the basis of a plasmafilled rod-pinch diode are reported. Experiments are carried out on the MIG high-current generator. A voltage pulse applied to the diode is sharpened and shortened by injecting plasma into the interelectrode gap up to the plasma-filled diode. Radiation extraction from the vacuum chamber in the paraxial direction is provided by inverting the positions of the cathode and anode using a post-hole vacuum convolute. It is demonstrated that the energy of a low-impedance high-current generator can be deposited with a high efficiency into an electron beam focused on the 1-mm² tip of the rod-shaped anode. With a tapered tungsten rod 1.5 mm in diameter used as an anode, a pulsed X-ray source about 1 mm in size generating 30-ns-long pulses is obtained. The absorbed dose per pulse measured with a LiF thermoluminescent dosimeter behind a 5-mm-thick aluminum screen 1 m away from the source reaches 0.042 Gy.     

Features of the motion of a 180° domain boundary in a thin ferromagnetic film with defects

For a thin ferromagnetic film, the braking process of a 180° domain boundary in a field of randomly distributed point defects is studied using perturbation theory. It is established that, for low velocities, the motion of the boundary is nonsteady-state. It is shown that the critical velocity of steady-state motion depends substantially on film thickness and the defect concentration. Fiz. Tverd. Tela (St. Petersburg) 41, 1231–1235 (July 1999)     

Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer

The structure of bulk GaN layers grown on (0001) sapphire substrates by vapor-phase epitaxy has been studied by x-ray diffraction and transmission electron microscopy (TEM). It is found that these layers contain grown-in and screw dislocations. The dislocation density decreases away from the interface. The effect of an amorphous buffer layer on the formation of the initial GaN layer and, thus, on the degree of perfection of gallium nitride layers is elucidated. A model of generating grown-in dislocations and the relaxation mechanism of misfit stresses are proposed.     

Critical behavior of the meniscus in helium crystals

The equilibrium shape of the interface between superfluid and crystalline ⁴He near the (0001) orientation is analyzed. A feature is observed in the edge angle as a function of the wall inclination with respect to the gravitational field. The step energy on the basal plane of the crystal is measured.     

Population processes in high-pressure inert-gas-mixture lasers

Working-level-population processes are analyzed on the basis of detailed investigations of the amplitude-time structure of the laser and spontaneous emission following a pulsed electric discharge in the mixtures He + R (R = Ar, Kr, Xe), Ar + Xe. Account is taken in the analysis of excitation by electrons (direct and stepwise) and of population as a result of relaxation processes (collisions of second kind with electrons; radiative cascades, recombination processes; collisions with the atoms of the working and buffer gases; excitation transfer from helium molecules). It is concluded that under optimum efficiency conditions inversion is produced in the lasers considered as a result of direct electron collision with the working atoms (Ar, Kr, Xe), which are in the ground state.Translated from Lazernye Sistemy, pp. 15–34, 1982.     

Spectral kinetic properties and lasing characteristics of diode-pumped Cr<Superscript>2+</Superscript>:ZnSe single crystals

The temperature and concentration quenching of the luminescence of Cr²⁺ ions in Cr:ZnSe crystals is experimentally investigated and the radiative lifetime of the upper lasing level is determined. The values of the cross sections of absorption from the ground state of Cr²⁺ ions in Cr:ZnSe crystals are refined. It is shown that the absorption from the excited state of Cr²⁺ ions is negligible near 1.5 μm. Lasing in Cr:ZnSe single crystals is implemented with an efficiency of 31% and an output power of 186 mW using laser diode pumping at a wavelength of 1.77 μm.     

Transformation of the Angular Power Spectrum of Scattered Radiation in a Turbulent Absorbing Magnetoactive Plasma

We consider the oblique incidence of a small-amplitude plane electromagnetic wave on a layer of turbulent absorbing plasma in a uniform external magnetic field. The equations for the first two statistical moments of the angular power spectrum of scattered radiation are derived in the geometrical-optics approximation. We show that two asymmetry factors of the problem, i.e., the oblique incidence and the influence of the anisotropic medium, compensate for each other along a certain direction and impede the appearance of the effect of displacement of the power-spectrum maximum and the effect of anomalous spectrum broadening. We find the condition at which such a case of wave propagation is realized. The dependence of the angular-spectrum shape on the distance from the plasma-layer boundary is studied numerically without using the small-angle approximation. The calculations confirm the results obtained using the geometrical-optics approximation.     

Manifestation of intramolecular hydrogen bonds in the IR spectra of bioactive aminophenols

The intermolecular interactions in solutions of aminophenols in CCl₄ are studied by the methods of IR Fourier spectroscopy. If the hydroxyl groups of aminophenol molecules occupy the ortho positions with respect to the amino groups of the molecules, the hydroxyl and amino groups are involved in intramolecular interactions with the formation of hydrogen bonds O-H...N and N-H...O. The introduction of two additional tert-butyl groups into the structure of the aminophenol molecule facilitates the formation of O-H...N bonds and impedes the formation of N-H...O bonds. The occurrence of the carbonyl group in the structure of aminophenols leads to the formation of intramolecular hydrogen bonds O-H...O=C. The introduction of the methyl groups into carbonyl-containing aminophenols transforms the O-H...O=C bond into the hydrogen bond N-H...O=C.