Photovoltaic and Electroluminescence Bifunctional Devices with Starburst Amine and Rare-Earth-Complexes

We fabricate the organic photovoltaic （PV） devices, in which 4,4＇,4＂-tris-（2-methylphenylphenylamino）triphenylamine （m-MTDATA） and rare earth （RE） （dibenzoylmethanato）a（bathohenanthroline） （RE（DBM）abath） （RE = Nd or Pr） are used as electron donor and acceptor, and investigate their PV properties. The PV diode fabricated in the optimum processing conditions shows the open-circuit voltage of 1.91 V, short-circuit current of 0.1 mA/cm^2, fill factor of 0.38, and the overall power conversion efficiency of 1.9% when it is irradiated under UV light （4 m W/cm^2）. The photocurrent density exhibits an increase of 20% at least when a very thin LiF layer is inserted between the RE-complexes and the A1 cathode. A strong electroluminescence from the interface is also observed and the maximum luminance of a yellow emission resulted from the exciplex is 580 cd/m^2 at 17 V bias.     

Data page reconstruction method based on two-dimensional soft output Viterbi algorithm with self reference for holographic data storage

This study introduces a two-dimensional (2D) partial response maximum likelihood (PRML) method to reconstruct a degraded data page having 2D inter-symbol interference for holographic data storage. The proposed 2D PRML method consists of 2D partial response (PR) target, 2D equalizer using least mean square algorithm, and 2D soft output Viterbi algorithm (SOVA) having just two one-dimensional (1D) SOVAs in horizontal and vertical directions. To accurately organize a trellis diagram of the 1D SOVA in structural accordance with the 2D PR target, this study proposes the self-reference process for the extrinsic information in the 1D SOVA. Finally, simulation results show that the proposed method has bit error rate performance similar to that of modified 2D SOVA having four 1D SOVAs despite the relatively low computational complexity. Moreover, parallel processing is possible in the two 1D SOVAs through the self-reference process.     

The effect of olefinic terminal chains on the mesomorphic properties of 4,4′-disubstituted diphenyldiacetylenes

New diphenyldiacetylenes of the type with A, B = H and/or F; m = 0, 1; n = 1–4; and X = C _n H_2n+1, F, CF₃ or CN were synthesized and their mesomorphic properties determined by hot stage polarizing microscopy and DSC. When m = 0, all of these compounds showed only a nematic phase except when X = CF₃ when both nematic and smectic A phases were seen. Both clearing and melting temperatures were higher than those reported for substitution with the corresponding alkyl chains but the much larger increase in clearing temperatures produced considerably wider nematic phases. Eutectic mixtures of a few of these olefins yielded nematic materials also having much wider temperature ranges and higher clearing temperatures than the eutectic mixtures of the alkyl compounds, while retaining their high birefringence and low viscosities. Such materials are of interest for beam-steering devices. Four of the diacetylenes with m = 1 (A, B = H) were also prepared (X = C₆H₁₃, F, n= 2, 3). When X was C₆H₁₃ (n=2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X=F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X=C₆H₁₃ and n=2 had a melting temperature below room temperature.     

发光二极管用于活性炭负载光催化剂反应器中挥发性有机化合物的降解

The applicability of ultraviolet-light emitting diodes(LEDs)as a light source for photocatalysis using granular activated charcoal (GAC)impregnated with transition metal-enhanced photocatalysts for the control of volatile organic compounds(VOCs)was investigated. Two target compounds(toluene and methyl mercaptan)were selected to evaluate the removal activities of the TiO2/GAC composites.The photocatalysts were prepared by a sol-gel method.Methyl trimethoxy silane was added as a precursor sol solution to bind...     

Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures

The effect of In composition on two-dimensional electron gas in wurtzite AlGaN/InGaN heterostructures is theoretically investigated. The sheet carrier density is shown to increase nearly linearly with In mole fraction x, due to the increase in the polarization charge at the AlGaN/InGaN interface. The electron sheet density is enhanced with the doping in the AlGaN layer. The sheet carrier density is as high as 3.7×1013 cm^-2 at the donor density of 10×1018 cm^-3 for the HEMT structure with x=0.3. The contribution of additional donor density on the electron sheet density is nearly independent of the In mole fraction.     

ChemInform Abstract: Growth of Cubic SiC Films Using 1,3-Disilabutane.

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