Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

The phase-change characteristics of Ge₂Sb₂Te₅ (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO₂ into GST film using cosputtering at room temperature. Phase separation (GST-rich nanocrystals were surrounded by HfO₂-rich amorphous phase) has been observed in annealed GST-HfO₂ composite films and the segregated domains exhibited a relatively uniform size. The reduced reset voltage of GST-HfO₂ based cell was due to the reduced programming volume by incorporating HfO₂ into GST. This work clearly reveals the highly promising potential of GST-HfO₂ composite films for application in PCM.     

Ni(II) removal from aqueous solution by biosorption and flocculation using microbial flocculant GA1

Research on Chemical Intermediates - Generally, most biomaterials present high biosorption capacity for heavy-metal ions. In this study, alkaline reagents and microbial flocculant GA1 (MBFGA1) were...     

Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors

We introduce a room temperature and solution-processible vanadium oxide (VO_x) buffer layer beneath Au source/drain electrodes for bottom-contact (BC) organic field-effect transistors (OFETs). The OFETs with the VO_x buffer layer exhibited higher mobility and lower threshold voltages than the devices without a buffer layer. The hole mobility with VO_x was over 0.11 cm²/V with the BC geometry with a short channel length (10 μm), even without a surface treatment on SiO₂. The channel width normalized contact resistance was decreased from 98 kΩ cm to 23 kΩ cm with VO_x. The improved mobility and the reduced contact resistance were attributed to the enhanced continuity of pentacene grains, and the increased work function and adhesion of the Au electrodes using the VO_x buffer layer.     

Microcalorimetric Character of Inhibition of Salicylaldehyde Glucosamine Schiff Base SG on Bacterial Metabolism

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Entanglement conditions for four-mode states via the uncertainty relations in conjunction with partial transposition

From the Heisenberg uncertainty relation in conjunction with partial transposition, we derive a class of inequalities for detecting entanglements in four-mode states. The sufficient conditions for bipartite entangled states are presented. We also discuss the generalization of the entanglement conditions via the Schrödinger-Robertson indeterminacy relation, which are in general stronger than those based on the Heisenberg uncertainty relation.     

Characteristics of pentacene organic thin film transistor with top gate and bottom contact

High performance pentacene organic thin film transistors (OTFT) were designed and fabricated using SiO₂ deposited by electron beam evaporation as gate dielectric material. Pentacene thin films were prepared on glass substrate with S--D electrode pattern made from ITO by means of thermal evaporation through self-organized process. The threshold voltage V_TH was --2.75± 0.1V in 0---50V range, and that subthreshold slopes were 0.42± 0.05V/dec. The field-effect mobility (μ_EF) of OTFT device increased with the increase of V_DS, but the μ_EF of OTFT device increased and then decreased with increased V_GS when V_DS was kept constant. When V_DS was --50V, on/off current ratio was 0.48× 10⁵ and subthreshold slope was 0.44V/dec. The μ_EF was 1.10cm²/(V.s), threshold voltage was --2.71V for the OTFT device.     

Carriers recombination processes in charge trapping memory cell by simulation

We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell＇s performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.     

X-ray spectra induced by slow highly charged Ar q + ions in collision with Nb surface

The X-ray spectra of Nb surface induced by Ar ^q+ (q = 16,17) ions with the energy range from 10 to 20 keV/q were studied by the optical spectrum technology. The experimental results indicate that the multi-electron excitation occurred as a highly charged Ar¹⁶⁺ ion was neutralized below the metal surface. The K shell electron of Ar¹⁶⁺ was excited and then de-excited cascadly to emit K X-ray. The intensity of the X-ray emitted from K shell of the hollow Ar atom decreased with the increase of projectile kinetic energy. The intensity of the X-ray emitted from L shell of the target atom Nb increased with the increase of projectile kinetic energy. The X-ray yield of Ar¹⁷⁺ is three magnitude orders larger than that of Ar¹⁶⁺. Supported by the National Natural Science Foundation of China (Grant Nos.10774149 and 10405025)     

Ultraviolet and visible upconversion luminescence of Tm(0.1)Yb(5):FOV oxyfluoride nanophase vitroceramics

The ultraviolet upconversion luminescence of Tm³⁺ ions sensitized by Yb³⁺ ions in oxyfluoride nanophase vitroceramics when excited by a 975 nm diode laser was studied. An ultraviolet upconversion luminescence line positioned at 363.6 nm was found. It was attributed to the fluorescence transition of ¹D₂→³H₆ of Tm³⁺ ion. Several visible upconversion luminescence lines at 450.7 nm, (477.0 nm, 462.5 nm), 648.5 nm, (680.5 nm, 699.5 nm) and (777.2 nm, 800.7 nm) were also found, which result respectively from the fluorescence transitions of ¹D₂→³F₄, ¹G₄→³H₆, ¹G₄→³F₄, ³F₃→³H₆ and ³H₄→³H₆ of Tm³⁺ ion. The careful measurement and analysis of the variation of upconversion luminescence intensity F as a function of the 975 nm pumping laser power P prove that the upconversion luminescence of ¹D₂ state is partly a five-photon upconversion luminescence, and the upconversion luminescence of ¹G₄ state and ³H₄ state are respectively the three-photon and two-photon upconversion luminescence. The theoretical analysis suggested that the upconversion mechanism of the 363.6 nm ¹D₂→³H₆ upconversion luminescence is partly the cross energy transfer of {³H₄(Tm³⁺), ³F₄(Tm³⁺), ¹G₄(Tm³⁺)→¹D₂(Tm³⁺)} and {¹G₄(Tm³⁺)→³F₄(Tm³⁺), ³H₄(Tm³⁺)→¹D₂(Tm³⁺)} between Tm³⁺ ions. In addition, the upconversion luminescence of ¹G₄ and ³H₄ state results respectively from the sequential energy transfer {²F_5/2(Yb³⁺)→²F_7/2(Yb³⁺), ³H₄(Tm³⁺)→¹G₄(Tm³⁺)} and {²F_5/2(Yb³⁺) →²F_7/2(Yb³⁺), ³F₄(Tm³⁺)→³F₂(Tm³⁺)} from Yb³⁺ ions to Tm³⁺ ions. Supported by the National Natural Science Foundation of China (Grant No. 10674019)