Coulomb synthesis

The explosive emission of electrons and ectons plays a fundamental role in electric discharges of various types. We use these fundamental phenomena to show that, in electric discharges in the region of the functioning of ectons, electric fields on the order of atomic fields appear, where ions can be accelerated to energies that lead to nuclear reactions. The mechanisms that determine the possibility of nuclear reactions have very fine tunings, which are difficult to attain using empirical approaches. We show this and arrive at the conclusion that the so-called cold synthesis is actually Coulomb synthesis. We suggest to call the mechanism considered in this work and leading to nuclear reaction “Coulomb synthesis.”     

Photonic-crystal waveguide for the second-harmonic generation

The possibility of efficient second-harmonic generation in the optical range in a planar dielectric waveguide with the active region in the form of a one-dimensional photonic crystal has been theoretically shown. The true phase matching can be achieved by controlling wave dispersion in the photonic crystal. The dispersion equations for the photonic crystal and three-layer waveguide have been self-consistently solved. It is shown that the coherence length may exceed 10 mm.     

Spectral Dynamics of Quantum Cascade Lasers Generating Frequency Combs in the Long-Wavelength Infrared Range

Technical Physics - We have studied the spectral and dynamic characteristics of quantum cascade lasers emitting in the long-wavelength infrared range. It is shown that lasers with a short cavity...     

Helical instability in variband semiconductors

In this paper the characteristics of the helical instability in a semiconductor plate in which the width of the forbidden band varies linearly over the thickness are studied theoretically. The dependences of the threshold product of the external fields and the wave vector which arise at the threshold of instability of the disturbances on the gradient of the width of the forbidden band and the orientations of the external electric and magnetic fields are calculated. It is shown that nonuniformity of the band structure can result in a lower excitation threshold of instability than in the case of a homogeneous-band semiconductor.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 54–58, January, 1991.