Derivatives of 1,1,2,2-tetraaminoethane: I. Condensation of 1,2-diacetoxy-1,2-bis(acylamino)ethanes with nitrogen-containing nucleophiles

Reaction of 1,2-diacetoxy-1,2-bis(acylamino)ethanes with acetamide and urethane gave rise to 1,2-bis(acetylamino)-1,2-bis(acylamino)ethanes and 1,2-bis(acylamino)-1,2-bis(ethoxycarbonylamino)ethanes respectively. Condensation products were isolated of reactions between 1,2-diacetoxy-1,2-bis-(acylamino)ethanes with acetonitrile, diaminofurazan, and 4-phenylfurazan-3-ylamine.     

Reaction of 2-polyfluoroalkylchromones with 1,3,3-trimethyl-3,4-dihydroisoquinolines and methylketimines as a direct route to zwitterionic axially chiral 6,7-dihydrobenzo[a]quinolizinium derivatives and 2,6-diaryl-4-polyfluoroalkylpyridines

[reaction: see text] 2-Polyfluoroalkylchromones react with 1,3,3-trimethyl-3,4-dihydroisoquinolines to give zwitterionic axially chiral 6,7-dihydrobenzo[a]quinolizinium derivatives in high yields. In addition, performing this reaction with aromatic methylketimines is a simple and convenient synthesis of 2,6-diaryl-4-polyfluoroalkylpyridines.     

Synthesis of polyacetylene with titanocene-aluminum hydride catalysts

Heterometallic hydride titanocene-aluminum complexes Cp₂Ti(-H)₂AlH(X) and (Cp₂Ti)₂AlH₄X are highly efficient homogeneous catalysts for acetylene polymerization. The binuclear complex of the composition Cp₂Ti(-H)₂AlH₂ at 2.2–3.2M concentrations in ether-toluene solutions exhibits the maximum activity in this reaction. It is believed that the mechanisms of the isomerization of olefins and the polymerization of acetylene are similar and, correspondingly, the compositions and structures of the active sites in both processes are close to each other. The polyacetylene formed with hydride catalysts (mostly thecis-isomer) after doping with iodine has an electrical conductivity of 1.5–2.0 · 10⁴ Ohm^–1 cm^–1.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 3, pp. 405–409, March, 1994.The work was carried out with the financial support of the Russian Foundation for Basic Research, project No. 93-03-5757.     

Electronic structure and spectra of binuclear bridged nitrosyl ruthenium complexes

The B3LYP method in the LanL2DZ basis set was used to carry out geometry optimization for the binuclear bridged complexes [RuCl₄(NO)(μ-Pyz)Ru(P)(CO)]^?, [Ru(Bipy)₂(NO)(μ-Pyz)Ru(NH₃)₅]⁵⁺, and [(NC)Ru(Py)₄(μ-CN)Ru(Py)₄NO]³⁺ (Pyz is pyrazine). The electronic spectra of the complexes were calculated by the TDDFT and CINDO-CI methods with allowance for solvation effects. The ground-state electronic configurations of the two ruthenium atoms in these compounds were shown to be different. Among the lower excited states of all complexes, states with essentially weakened Ru-NO bonds were found. The strong absorption in the visible region of the spectrum of [Ru(Py)₄NO-CN-Ru(Py)₄CN]³⁺ is due to the interfragment electron transfer Ru^II → {RuNO} accompanied by weakening of the bond between nitrogen oxide and the complex.     

Electronic Spectra of Ruthenium Nitrosyl Complexes with Macrocyclic Ligands

Electronic spectra of ruthenium(II) nitrosyl complexes [Ru(NO)(salen)(X)]⁴ⁿ (X = Cl, H₂O; n = 0, 1) and [Ru(NO)(P)(ONO)] with tetradentate -conjugated ligands N,N'-ethylenebis(salicylideniminato) dianion (salen) and porphinate dianion (P) were calculated by the TD DFT and CINDO/CI methods. The data obtained were compared to the results of previous calculations of the spectra of trans-[Ru(NO)(NH₃)₄(L)]^{3 +} complexes with nitrogen-containing heterocyclic ligands L. It was found that charge-transfer transitions to * orbitals of the RuNO group dominate in the long-wave part of the spectrum irrespective of the other ligands.     

2,2′,2″-(2,4,6-Trioxo-1,3,5-triazinane-1,3,5-triyl)triacetic Acid Derivatives. New Aspects of Reactivity

Russian Journal of Organic Chemistry - Reaction of 2,2′,2″-(2,4,6-trioxo-1,3,5-triazinane-1,3,5-triyl)triacetic acid derivatives with nucleophiles in aqueous medium involved opening of...     

Application of Cepstral Processing of Echo Signals in the Profiling of Layered Structure using Parametric Arrays

Acoustical Physics - An important task in bottom sediments survey is to determine the boundaries of the layered structure. The echo pulse is the superposition of reflections from several interfaces...     

A complex study of structural imperfections of the CdTe and CdTe: Cl crystals grown by the sublimation method

The structure of CdTe and CdTe: Cl crystals grown by the modified physical vapor transport method has been investigated using selective chemical etching, electron diffraction, and X-ray diffractometry. It has been established that the structural perfection is improved in the growth direction and from the periphery of the radial cross section toward the center of the crystal. It has been shown that the thermomechanical stresses generated by the adhesion of the crystals to the walls of the growth ampoule are the main source of the formation of dislocations and the factor responsible for their nonuniform distribution over the volume of ingots.     

Linear HgCdTe IR FPA 288×4 with bidirectional scanning

The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of n⁺-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to R₀ = 1.6×10⁷ Ω zero bias voltage, which corresponded to R₀A ～70 Ω ·cm² and to the maximal value R_max = 2.1 × 10⁸ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity S_λ = 2.27×10⁸ V/W, the detectivity D_λ ^* = 2.13 × 10¹¹ cm × Hz^1/2 × W^t1, and the noise equivalent temperature difference NETD = 9 mK.