Quantum Spin Half Algebra and Generalized Megrelishvili Protocol for Confidentiality of Digital Images

International Journal of Theoretical Physics - Most of the enciphering structures are based on the transformation of mediums by describing the strict criteria. The presented article is based on...     

Pauli Half Spinning and Elliptic Curve Based Information Confidentiality Mechanism

International Journal of Theoretical Physics - The use of digital contents has increased tremendously in this modern era. In fact, people spend more time on internet than ever which urged the...     

A Nonclinical Spectroscopic Approach for Diagnosing Covid-19: A Concise Perspective

Journal of Applied Spectroscopy - With the COVID-19 outbreak, many challenges are posed before the scientific world to curb this pandemic. The diagnostic testing, treatment, and vaccine development...     

Surface plasmon polaritons induced reduced hacking

There is always need for secure transmission of information and simultaneously compact-size photonic circuits. This can be achieved if surface plasmon-polaritons(SPPs) are used as source of information, and the reduced hacking as the transmission phenomenon. In this article, an SPP-based reduced hacking scheme is presented at interface between atomic medium and metallic conductor. The SPP propagation is manipulated with conductivity of the metal. The delay or advance of the SPP is found to create nanosecond time gap which can be used for storing and sending the information safely. The reduced hacking is further modified with conductivity of the metal and the control parameters of the atomic medium.     

Analysis of laser micro drilled holes through aluminium for micro-manufacturing applications

Conventional laser machining of aluminium with long wavelength lasers has its inherent problems due to the high reflectivity of aluminium to laser radiation (Handbook of Optics, vol 1, 2nd ed. New York: McGraw-Hill; 1995). Laser processing at shorter wavelengths reduces the reflectivity of the workpiece to the incident laser radiation and can also reduce the dimensions of the obtainable machining geometries. This paper reviews the limiting factors in the micro machining of aluminium using a diode pumped solid state (DPSS) Nd:YAG laser operated at 1064, 532, and 355 nm. The geometries of the laser-machined samples were investigated using interferometric, and optical methods to assess how the processing fluence and wavelength will affect the obtainable precision for successful integration of the laser in a micromachining CAD/CAM system.     

Study of decay mechanisms in B--->Lambdac+ppi- decays and observation of low-mass structure in the Lambdac+p system

Using a sample of 152 x 10(6) BB pairs accumulated with the Belle detector at the KEKB e+e- collider, we study the decay mechanism of three-body charmed decay B- --> Lambdac+ ppi-. The intermediate two-body decay B--->Sigmac (2455)0 p is observed for the first time with a branching fraction of (3.7 +/- 0.7 +/- 0.4 +/- 1.0) x 10(-5) and a statistical significance of 8.4sigma. We also observe a low-mass enhancement in the (Lambdac+p) system, which can be parametrized as a Breit-Wigner function with a mass of (3.35(-0.02)(+0.01) +/-0.02) GeV/c2 and a width of (0.07(-0.03)(+0.04) +/-0.04) GeV/c2. We measure its branching fraction to be (3.9(-0.7)(+0.8) +/- 0.4 +/- 1.0) x 10(-5) with a statistical significance of 6.2sigma. The errors are statistical, systematic, and that of the Lambdac+-->pK- pi+ decay branching fraction.     

Removal of oxygen from silicon by electron beam melting

Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10^?5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.