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101.
The reactions of LnCl3·6H2O (Ln=Eu or Dy) and Na2[Mo2O3S(HNTA)2]·6H2O afford Na[Mo2O3S(HNTA)2]2·Eu(H2O)9·3H2O (1) (NTA=nitrilotriacetate) and Na{(H2O)6Dy[Mo2O3S(HNTA)2]2}·7.5H2O (2), respectively. The [Mo2O3S(HNTA)2]2− cluster units of 1 are interconnected by Na+ into a 3-D open framework with rutile topology templated by . The coordination of [Mo2O3S(HNTA)2]2− to the slightly smaller Dy3+ ion of greater ionic potential as a consequence of lanthanide contraction has been observed to form the pentanuclear heterometallic {Dy(H2O)6[Mo2O3S(HNTA)2]2}−, which is linked by Na+ and hydrogen bonds between the protonated carboxylate groups into a 3-D supramolecular framework. The weak antiferromagnetic interactions between the Dy3+ ions of 2 have been observed. 相似文献
102.
Transport in Porous Media - Permeability, one of the most significant parameters for CBM, is affected by many influencing factors. In this paper, an improved fully coupled permeability model was... 相似文献
103.
Si3N4陶瓷与灰铸铁配副的摩擦学性能 总被引:9,自引:4,他引:9
在M-200磨损试验机上于无润滑、蒸馏水润滑、乳化液润滑和10^#机构油润滑4种条件下,对Si3N4陶瓷分别与灰铸铁HT和T8钢配副进行了摩擦损性能的对比试验研究。结果表明:Si3N4陶瓷与灰铸铁HT配副时的摩擦因数和磨损体积在几种润滑环境中均表现出同样的顺序 相似文献
104.
105.
Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors 下载免费PDF全文
This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors.It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device.The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail.Under the ON-state stress,the strong electric-field led to degradation of SiNx passivation located in the gate-drain region.As the thickness of SiNx passivation increases,the density of the surface state will be increased to some extent.Meanwhile,it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse. 相似文献
106.
107.
108.
Polarization-dependent linear absorption, second-harmonic generation (SHG) and 3rd-order nonlinearities of wellaligned ZnO nanorod arrays have been investigated with ps pulses. The depressed spectral width and the enhanced intensity of reflective SHG along the long axis of ZnO nanorods were observed by using p-polarized pulses, which is explained by the optical confinements. The nonlinear absorption coefficient measured with s-polarization reached the maximum 4.0×10^4cm/GW at the wavelength -750nm, which revealed a large two-photon resonance absorption attributed to the quantum confined exciton when the polarization is vertical to the long axis of ZnO nanorod. 相似文献
109.
110.
By use of the exact diagonalization method, the quantum phase transition and entanglement in a 6-Li atom system are studied.
It is found that entanglement appears before the quantum phase transition and disappears after it in this exactly solvable
quantum system. The present results show that the von Neumann entropy, as a measure of entanglement, may reveal the quantum
phase transition in this model. 相似文献